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IPP60R060P7
600V, 0.06OHM, N-CHANNEL MOSFET
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- 製造商。 部分 #IPP60R060P7
- 包 TO-220
- 資料表 IPP60R060P7 DataSheet
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概述
Description
The IPP60R060P7 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is designed for power applications, featuring a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 60A. This MOSFET is characterized by its low on-state resistance (R_DS(on)), which typically ranges around 6 milliohms, allowing for efficient operation with minimal power loss.
The device is housed in a TO-247 package, making it suitable for various cooling solutions in power conversion, motor control, and inverter applications. With a maximum gate-source voltage (V_GS) rating, it can be easily driven by standard gate drivers. Its fast switching capability enhances performance in high-frequency applications, making it a popular choice for engineers looking to optimize efficiency and thermal management in their designs. Overall, the IPP60R060P7 is a reliable component for modern power electronics.
The device is housed in a TO-247 package, making it suitable for various cooling solutions in power conversion, motor control, and inverter applications. With a maximum gate-source voltage (V_GS) rating, it can be easily driven by standard gate drivers. Its fast switching capability enhances performance in high-frequency applications, making it a popular choice for engineers looking to optimize efficiency and thermal management in their designs. Overall, the IPP60R060P7 is a reliable component for modern power electronics.
Features
The IPP60R060P7 is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 60V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of 60A at 25°C.
3. On-Resistance (R_DS(on)): Low on-resistance, typically around 0.06 ohms, enhancing efficiency and thermal performance.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, enabling easy drive with standard logic levels.
5. Package: Available in TO-220 package, facilitating efficient heat dissipation.
6. Fast Switching Capabilities: Suitable for high-frequency applications.
7. Thermal Resistance: Low thermal resistance ensures effective heat management.
8. Applications: Ideal for use in power supplies, motor drives, and DC-DC converters.
Overall, the IPP60R060P7 is optimized for reliability and high performance in power switching applications.
1. Voltage Rating: 60V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of 60A at 25°C.
3. On-Resistance (R_DS(on)): Low on-resistance, typically around 0.06 ohms, enhancing efficiency and thermal performance.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, enabling easy drive with standard logic levels.
5. Package: Available in TO-220 package, facilitating efficient heat dissipation.
6. Fast Switching Capabilities: Suitable for high-frequency applications.
7. Thermal Resistance: Low thermal resistance ensures effective heat management.
8. Applications: Ideal for use in power supplies, motor drives, and DC-DC converters.
Overall, the IPP60R060P7 is optimized for reliability and high performance in power switching applications.
Package
The IPP60R060P7 is typically available in a TO-220 package type. This package is designed for high-power applications, offering good thermal performance and ease of attachment to heatsinks.
Pinout
The IPP60R060P7 is a N-channel power MOSFET with a pin count of 4. Its typical functions include high-efficiency power switching in various applications such as automotive, industrial, and consumer electronics.
The pins are generally designated as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The terminal through which the load current flows out.
3. Source (S): Connects to the ground or the negative side of the power supply.
This MOSFET is notable for its low on-resistance and high-speed switching capabilities, which contribute to reduced power losses and improved thermal performance in circuits where it is used.
The pins are generally designated as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The terminal through which the load current flows out.
3. Source (S): Connects to the ground or the negative side of the power supply.
This MOSFET is notable for its low on-resistance and high-speed switching capabilities, which contribute to reduced power losses and improved thermal performance in circuits where it is used.
Manufacturer
The IPP60R060P7 is manufactured by Infineon Technologies AG, a leading global semiconductor company based in Germany. Infineon specializes in power semiconductors, automotive solutions, and various electronic components. The company focuses on providing innovative technologies for energy efficiency, mobility, and security in a wide range of applications, including automotive, industrial, and consumer electronics. Infineon is known for its commitment to sustainability and plays a significant role in advancing the Internet of Things (IoT) and smart grid technologies.
Application
The IPP60R060P7 is an N-channel MOSFET used primarily in power electronics applications. Its key areas include DC-DC converters, motor drives, power supplies, and renewable energy systems (such as solar inverters). It is also suitable for applications requiring efficient switching, such as industrial automation and electric vehicles, due to its low on-resistance and high-speed performance.
Equivalent
The IPP60R060P7 is a N-channel MOSFET, and its equivalent products include the IRF840, STP60NF06, and FQP60N06. Additionally, the MTP60N06V and IXFH60N06 may also serve as suitable substitutes, depending on the specific application requirements. Always check the datasheets for voltage, current ratings, and thermal characteristics to ensure compatibility.
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