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FDMB2308PZ
MOSFET 2P-CH 6MLP
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規格
| Series | PowerTrench® |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3030pF @ 10V |
| Power - Max | 800mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Supplier Device Package | 6-MLP (2x3) |
| Base Product Number | FDMB2308 |
概述
Description
FDMB2308PZ is a dual N-channel MOSFET designed for high-speed switching applications in power management systems. With a low on-resistance and high current handling capability, it is suitable for a variety of applications, including battery management, power distribution, and DC-DC converters. The device features a compact package design, which enhances thermal performance and reduces PCB space requirements. It typically operates within a voltage range suitable for many consumer and industrial applications, making it versatile for use in both portable devices and larger systems. Key specifications may include low gate threshold voltage, fast switching times, and high reliability under varying temperature conditions. Overall, FDMB2308PZ is engineered to provide efficient power control and reliable operation in modern electronic circuits.
Features
The FDMB2308PZ is a dual N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Dual Configuration: Contains two independent N-channel MOSFETs in a single package, enabling compact designs.
2. Low On-Resistance: Offers low R_DS(on) values, minimizing conduction losses and improving efficiency.
3. High Speed: Capable of fast switching speeds, making it suitable for high-frequency applications.
4. Thermal Management: Features a robust thermal performance, allowing for reliable operation under high load conditions.
5. Voltage Rating: Typically supports a maximum drain-source voltage (V_DS), suitable for a wide range of power applications.
6. Gate Threshold Voltage: Designed for low gate threshold voltage, ensuring easy drive with standard logic levels.
7. Package Type: Available in a compact, surface-mount package, facilitating PCB space savings.
These attributes make the FDMB2308PZ ideal for applications such as DC-DC converters, power management systems, and motor control circuits.
1. Dual Configuration: Contains two independent N-channel MOSFETs in a single package, enabling compact designs.
2. Low On-Resistance: Offers low R_DS(on) values, minimizing conduction losses and improving efficiency.
3. High Speed: Capable of fast switching speeds, making it suitable for high-frequency applications.
4. Thermal Management: Features a robust thermal performance, allowing for reliable operation under high load conditions.
5. Voltage Rating: Typically supports a maximum drain-source voltage (V_DS), suitable for a wide range of power applications.
6. Gate Threshold Voltage: Designed for low gate threshold voltage, ensuring easy drive with standard logic levels.
7. Package Type: Available in a compact, surface-mount package, facilitating PCB space savings.
These attributes make the FDMB2308PZ ideal for applications such as DC-DC converters, power management systems, and motor control circuits.
Package
The FDMB2308PZ is packaged in a small, surface-mount SO-8 (Small Outline 8) package. This compact design is suitable for space-constrained applications in electronics.
Pinout
The FDMB2308PZ is a dual N-channel MOSFET in a surface mount package. It features a total of 8 pins. The primary function of this device is to act as a switch or amplifier in various electronic circuits, particularly in power management applications.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first MOSFET.
2. Source 1 (S1) - Source terminal of the first MOSFET.
3. Drain 1 (D1) - Drain terminal of the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Source 2 (S2) - Source terminal of the second MOSFET.
6. Drain 2 (D2) - Drain terminal of the second MOSFET.
7. Common Drain (D) - Common connection for both MOSFET drains.
8. Common Source (S) - Common connection for both MOSFET sources.
This configuration allows for efficient switching and control in power applications.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first MOSFET.
2. Source 1 (S1) - Source terminal of the first MOSFET.
3. Drain 1 (D1) - Drain terminal of the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Source 2 (S2) - Source terminal of the second MOSFET.
6. Drain 2 (D2) - Drain terminal of the second MOSFET.
7. Common Drain (D) - Common connection for both MOSFET drains.
8. Common Source (S) - Common connection for both MOSFET sources.
This configuration allows for efficient switching and control in power applications.
Manufacturer
The FDMB2308PZ is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor designs and produces a broad range of semiconductor components, including transistors, diodes, integrated circuits, and power management devices. The company serves diverse markets such as automotive, industrial, communications, consumer electronics, and computing. ON Semiconductor focuses on energy-efficient devices and is known for its commitment to innovation and sustainability in the semiconductor industry.
Application
The FDMB2308PZ is a dual N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supply circuits, battery management systems, and motor control. It's also suitable for load switching and signal amplification in various electronic devices. Its low on-resistance and fast switching characteristics make it ideal for efficient energy conversion and thermal management in compact designs.
Equivalent
The FDMB2308PZ is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and FDN337N. Ensure to check specifications such as voltage, current ratings, and package type for compatibility in your application.
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