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ZXMN2A01FTA
MOSFET N-CH 20V 1.9A SOT23-3
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規格
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 303 pF @ 15 V |
| Power Dissipation (Max) | 625mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | ZXMN2 |
概述
Description
The ZXMN2A01FTA is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It is commonly used in various electronic devices for switching and amplification purposes. The device features a low on-resistance and fast switching speed, making it suitable for applications such as DC-DC converters, load switches, and other power management circuits.
This MOSFET is housed in a compact SOT-23 package, which is ideal for space-constrained designs. It typically operates at a low gate-source voltage and offers robust performance over a wide range of temperatures. The ZXMN2A01FTA is appreciated for its reliability and efficiency, contributing to reduced power loss and improved thermal performance in electronic systems.
Key specifications include a drain-source voltage (V_DS) and a continuous drain current (I_D) rating, which should be checked against specific design requirements to ensure compatibility. Overall, the ZXMN2A01FTA is a versatile component in modern electronic design, aiding in the creation of efficient and compact power solutions.
This MOSFET is housed in a compact SOT-23 package, which is ideal for space-constrained designs. It typically operates at a low gate-source voltage and offers robust performance over a wide range of temperatures. The ZXMN2A01FTA is appreciated for its reliability and efficiency, contributing to reduced power loss and improved thermal performance in electronic systems.
Key specifications include a drain-source voltage (V_DS) and a continuous drain current (I_D) rating, which should be checked against specific design requirements to ensure compatibility. Overall, the ZXMN2A01FTA is a versatile component in modern electronic design, aiding in the creation of efficient and compact power solutions.
Features
The ZXMN2A01FTA is an N-channel MOSFET designed for various electronic applications. Key features include:
1. Low On-Resistance: It offers low on-state resistance, enhancing efficiency by minimizing power loss during conduction.
2. Fast Switching Speed: The MOSFET supports rapid switching, beneficial for high-speed applications and reducing switching losses.
3. Drain-Source Voltage (Vds): It typically supports a maximum drain-source voltage, often around 100V, providing reliability in higher voltage applications.
4. Continuous Drain Current (Id): This component can handle a continuous drain current, usually rated at several amperes, making it suitable for moderate power applications.
5. Compact Package: Offered in a small surface-mount package, like SOT-23, it is ideal for space-constrained designs.
6. Thermal Performance: Good thermal characteristics assist in maintaining stability and performance under varying temperature conditions.
7. Applications: Commonly used in power management, load switching, and DC-DC converter circuits due to its reliable performance and efficiency.
These features make the ZXMN2A01FTA a versatile choice for designers looking for a reliable N-channel MOSFET in various electronic applications.
1. Low On-Resistance: It offers low on-state resistance, enhancing efficiency by minimizing power loss during conduction.
2. Fast Switching Speed: The MOSFET supports rapid switching, beneficial for high-speed applications and reducing switching losses.
3. Drain-Source Voltage (Vds): It typically supports a maximum drain-source voltage, often around 100V, providing reliability in higher voltage applications.
4. Continuous Drain Current (Id): This component can handle a continuous drain current, usually rated at several amperes, making it suitable for moderate power applications.
5. Compact Package: Offered in a small surface-mount package, like SOT-23, it is ideal for space-constrained designs.
6. Thermal Performance: Good thermal characteristics assist in maintaining stability and performance under varying temperature conditions.
7. Applications: Commonly used in power management, load switching, and DC-DC converter circuits due to its reliable performance and efficiency.
These features make the ZXMN2A01FTA a versatile choice for designers looking for a reliable N-channel MOSFET in various electronic applications.
Package
The ZXMN2A01FTA is a MOSFET transistor that comes in a SOT-23 package. The SOT-23 package is a small, surface-mount device typically used for compact electronics applications.
Pinout
The ZXMN2A01FTA is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used for switching and amplification in electronic circuits. It typically comes in a small, surface-mount package known as SOT-23. The pin count for the SOT-23 package is 3 pins.
The functions of these pins are as follows:
1. Gate (G): This is the control pin that modulates the conductivity between the drain and source. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current flows out of the transistor. It is connected to the load or the circuit being controlled.
3. Source (S): This is the terminal through which the current enters the transistor.
The ZXMN2A01FTA is used in a variety of applications such as load switches, power management, and signal amplification due to its efficiency and compact size.
The functions of these pins are as follows:
1. Gate (G): This is the control pin that modulates the conductivity between the drain and source. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current flows out of the transistor. It is connected to the load or the circuit being controlled.
3. Source (S): This is the terminal through which the current enters the transistor.
The ZXMN2A01FTA is used in a variety of applications such as load switches, power management, and signal amplification due to its efficiency and compact size.
Manufacturer
The ZXMN2A01FTA is manufactured by Diodes Incorporated. Diodes Incorporated is a global semiconductor company that designs, manufactures, and supplies a broad range of semiconductor products. They focus on discrete, logic, analog, and mixed-signal semiconductor markets, serving a variety of applications in markets such as consumer electronics, computing, communications, industrial, and automotive. Their product portfolio includes diodes, rectifiers, transistors, MOSFETs, protection devices, and more.
Application
The ZXMN2A01FTA is a N-channel MOSFET commonly used in applications such as load switches, power management, DC-DC converters, and low-voltage switching. It is suitable for battery-powered devices, portable electronics, and consumer electronics due to its low on-resistance and efficient switching capabilities. Its compact SOT-23 package makes it ideal for space-constrained designs.
Equivalent
The ZXMN2A01FTA is an N-channel MOSFET. Equivalent products include the IRLML2502, 2N7002, and BSS138. These alternatives are also N-channel MOSFETs with similar voltage and current ratings, but always verify the datasheets for specific parameters to ensure compatibility for your application.
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