ZXMN10A08DN8TA

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ZXMN10A08DN8TA

MOSFET 2N-CH 100V 1.6A 8SO

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規格

Part Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.6A
Rds On (Max) @ Id, Vgs 250mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 50V
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Product Number ZXMN10

概述

Description

The ZXMN10A08DN8TA is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features low on-resistance, allowing for reduced power loss during operation, making it suitable for power management, motor control, and other high-current applications. The device typically supports a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of up to 10A.
This MOSFET is characterized by its fast switching capabilities, enabling efficient operation in both linear and switching modes. Its small package size (DPAK) allows for easy integration into compact designs. The ZXMN10A08DN8TA is often used in applications such as DC-DC converters, LED drivers, and battery management systems, where reliability and efficiency are critical.
When designing circuits with this component, attention to thermal management and voltage ratings is essential to ensure optimal performance and longevity.

Features

The ZXMN10A08DN8TA is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 80V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 10A, facilitating robust performance in various applications.
3. Low On-Resistance: It features a low R_DS(on) of approximately 0.1Ω at V_GS = 10V, which minimizes power loss during operation.
4. Fast Switching: The MOSFET is optimized for fast switching, which enhances efficiency in applications like power supplies and DC-DC converters.
5. Package Type: It comes in a compact DPAK (TO-252) package, allowing for efficient thermal management and ease of integration into circuit designs.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, enabling operation with lower gate drive voltages.
These features make the ZXMN10A08DN8TA suitable for applications in power management, automotive, and industrial sectors.

Package

The ZXMN10A08DN8TA is packaged in a DPAK (TO-252) format. This type of package is typically used for power MOSFETs and allows for efficient thermal management and compact PCB design.

Pinout

The ZXMN10A08DN8TA is an N-channel MOSFET with a total of 8 pins. Its primary function is to act as an electronic switch or amplifier in various applications, including power management, switching, and signal processing.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET operation.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in.
The device is designed for low on-resistance and high-speed switching applications, making it suitable for use in DC-DC converters, motor drivers, and other power control circuits. Typically, this device is rated for a maximum drain current of around 10A and a voltage rating of about 30V, depending on specific conditions.
Make sure to consult the datasheet for precise specifications and electrical characteristics.

Manufacturer

The ZXMN10A08DN8TA is manufactured by Diodes Incorporated. Diodes Incorporated is a global manufacturer of high-quality semiconductor products. The company specializes in discrete, logic, and analog semiconductor components, which are used in a wide range of applications such as consumer electronics, automotive systems, and industrial controls. Founded in 1959 and headquartered in Plano, Texas, Diodes Incorporated focuses on innovation and customer-driven solutions, providing a diverse portfolio of products that includes diodes, transistors, voltage regulators, and more. The company is known for its commitment to quality and reliability in electronic components.

Application

The ZXMN10A08DN8TA is a N-channel MOSFET primarily used in power management applications, such as DC-DC converters, switching power supplies, and motor control. Its low on-resistance and fast switching capabilities make it suitable for efficient energy conversion in consumer electronics, automotive systems, and industrial automation. Additionally, it can be utilized in load switching and signal amplification applications.

Equivalent

The ZXMN10A08DN8TA is a N-channel MOSFET. Equivalent products include the IRLZ44N, BSS138, and FQP30N06L. Always verify specifications such as voltage, current ratings, and package type before substitution.

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