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W9812G6KH-6
IC DRAM 128MBIT LVTTL 54TSOP II
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規格
| Part Status | Active |
| Base Product Number | W9812G6 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mbit |
| Memory Organization | 8M x 16 |
| Memory Interface | LVTTL |
| Clock Frequency | 166 MHz |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Packaging | Tray |
| Access Time | 5 ns |
概述
Description
W9812G6KH-6 is a 128Mb (16MB) DRAM memory chip produced by Winbond. It utilizes the DDR (Double Data Rate) SDRAM technology, operating at a clock frequency of 400MHz, which allows for efficient data transfer rates. This chip is designed for applications requiring high-speed memory, including computer systems, networking equipment, and consumer electronics.
Key features include a 3.2V operating voltage and a 64-bit data width, providing a balance of performance and power efficiency. The W9812G6KH-6 is packaged in a compact TSOP-II format, facilitating easy integration into various devices.
Its architecture supports burst mode and is capable of fast page access, enhancing overall system responsiveness. As a DRAM solution, it is particularly suitable for applications requiring large memory capacities combined with rapid data access, making it ideal for both desktop and mobile computing environments.
Key features include a 3.2V operating voltage and a 64-bit data width, providing a balance of performance and power efficiency. The W9812G6KH-6 is packaged in a compact TSOP-II format, facilitating easy integration into various devices.
Its architecture supports burst mode and is capable of fast page access, enhancing overall system responsiveness. As a DRAM solution, it is particularly suitable for applications requiring large memory capacities combined with rapid data access, making it ideal for both desktop and mobile computing environments.
Features
The W9812G6KH-6 is a 1Gbit (128MB) DDR2 SDRAM memory chip from Winbond. Key features include:
1. Density: 1 Gigabit capacity, organized as 128M x 8 bits.
2. Speed: Operates at a clock frequency of 400MHz, supporting data rates up to 800MT/s.
3. Interface: DDR2 (Double Data Rate 2), providing enhanced performance over DDR.
4. Voltage: Operates at a low voltage of 1.8V, which helps in reducing power consumption.
5. Package: Available in various package types, typically in a 66-ball FBGA (Fine Ball Grid Array).
6. Latency: Offers low latency options, improving responsiveness for applications.
7. Applications: Suitable for a wide range of applications including consumer electronics, networking devices, and computing systems.
This chip is designed for high-performance applications requiring efficient memory solutions.
1. Density: 1 Gigabit capacity, organized as 128M x 8 bits.
2. Speed: Operates at a clock frequency of 400MHz, supporting data rates up to 800MT/s.
3. Interface: DDR2 (Double Data Rate 2), providing enhanced performance over DDR.
4. Voltage: Operates at a low voltage of 1.8V, which helps in reducing power consumption.
5. Package: Available in various package types, typically in a 66-ball FBGA (Fine Ball Grid Array).
6. Latency: Offers low latency options, improving responsiveness for applications.
7. Applications: Suitable for a wide range of applications including consumer electronics, networking devices, and computing systems.
This chip is designed for high-performance applications requiring efficient memory solutions.
Package
The W9812G6KH-6 is a DDR2 SDRAM memory chip packaged in a 54-ball FBGA (Fine Ball Grid Array) form factor.
Pinout
The W9812G6KH-6 is a 1 Gigabit (128 Meg x 8) DDR3 SDRAM memory chip. It has a total of 78 pins organized in a TSOP II (Thin Small Outline Package) configuration.
The primary functions of the pins include data input/output, power supply, ground, and control signals. Key pin functions include:
- DQ0-DQ7: Data input/output lines.
- A0-A13: Address input lines used to select rows and columns.
- BA0, BA1: Bank address lines for selecting the memory bank.
- CK, CK#: Clock input for timing control.
- CS#: Chip select for enabling/disabling the chip.
- RAS#, CAS#, WE#: Control signals for read/write operations.
- VDD, VSS: Power supply and ground.
This design enables efficient memory operations suitable for various applications in computing.
The primary functions of the pins include data input/output, power supply, ground, and control signals. Key pin functions include:
- DQ0-DQ7: Data input/output lines.
- A0-A13: Address input lines used to select rows and columns.
- BA0, BA1: Bank address lines for selecting the memory bank.
- CK, CK#: Clock input for timing control.
- CS#: Chip select for enabling/disabling the chip.
- RAS#, CAS#, WE#: Control signals for read/write operations.
- VDD, VSS: Power supply and ground.
This design enables efficient memory operations suitable for various applications in computing.
Manufacturer
The W9812G6KH-6 is manufactured by Winbond Electronics Corporation, a Taiwanese company. Winbond specializes in semiconductor products, particularly in memory solutions, including DRAM and flash memory. Founded in 1987, the company is known for its focus on providing high-quality memory chips for various applications, including consumer electronics, industrial devices, and automotive systems. Winbond operates globally and is recognized for its innovations in memory technology, catering to a diverse range of industries.
Application
The W9812G6KH-6 is a DRAM memory chip primarily used in applications such as consumer electronics, personal computers, laptops, and gaming devices. Its high-speed performance and low power consumption make it suitable for mobile devices and embedded systems. Additionally, it is utilized in networking equipment and industrial applications where reliable memory is essential for data processing and storage.
Equivalent
The W9812G6KH-6 is a 1Gb DDR2 SDRAM memory chip. Equivalent products include:
1. Micron MT47H128M8
2. Hynix HYMD512M646D8
3. Nanya NT5TU128M8DG
Ensure compatibility with specific application requirements before substituting.
1. Micron MT47H128M8
2. Hynix HYMD512M646D8
3. Nanya NT5TU128M8DG
Ensure compatibility with specific application requirements before substituting.
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