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W971GG6NB-25
IC DRAM 1GBIT SSTL 18 84TFBGA
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規格
| Part Status | Active |
| Base Product Number | W971GG6 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 1Gbit |
| Memory Organization | 64M x 16 |
| Memory Interface | SSTL_18 |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package | 84-TFBGA |
| Supplier Device Package | 84-TFBGA (8x12.5) |
| Packaging | Tray |
| Access Time | 57.5 ns |
概述
Description
The W971GG6NB-25 is a type of DRAM (Dynamic Random Access Memory) chip, specifically designed for use in various electronic applications. Manufactured by Winbond, this memory module features a 256Mb (megabit) capacity and operates with a wide range of data rates. It typically supports a 3.3V power supply and utilizes a x16 data interface, making it compatible with various digital devices.
This memory chip is often employed in consumer electronics, automotive applications, and industrial systems due to its reliability and performance. The "-25" suffix denotes the speed grade, indicating its maximum access time. The W971GG6NB-25 supports various functionalities, including burst read and write operations, enhancing the efficiency of data processing.
Overall, the W971GG6NB-25 is a versatile and efficient memory solution for applications requiring reliable data storage and retrieval.
This memory chip is often employed in consumer electronics, automotive applications, and industrial systems due to its reliability and performance. The "-25" suffix denotes the speed grade, indicating its maximum access time. The W971GG6NB-25 supports various functionalities, including burst read and write operations, enhancing the efficiency of data processing.
Overall, the W971GG6NB-25 is a versatile and efficient memory solution for applications requiring reliable data storage and retrieval.
Features
The W971GG6NB-25 is a 256M-bit DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip. Here are its key features:
1. Density: 256 Megabits, organized as 32M x 8 bits.
2. Data Rate: Supports data rates up to 800 Mbps, operating at 1600 MT/s (megatransfers per second).
3. Voltage: Operates at a low voltage of 1.5V, enhancing energy efficiency.
4. Package Type: Typically available in a 78-ball FBGA (Fine Ball Grid Array) package, facilitating compact designs.
5. Access Speed: Offers various speed grades, with a CAS latency (CL) of 11 or lower, providing quick data access.
6. Refresh: Supports both standard and self-refresh modes for power management.
7. Application: Ideal for memory applications in consumer electronics, computing, and networking.
These features make the W971GG6NB-25 suitable for high-performance applications requiring efficient and reliable memory solutions.
1. Density: 256 Megabits, organized as 32M x 8 bits.
2. Data Rate: Supports data rates up to 800 Mbps, operating at 1600 MT/s (megatransfers per second).
3. Voltage: Operates at a low voltage of 1.5V, enhancing energy efficiency.
4. Package Type: Typically available in a 78-ball FBGA (Fine Ball Grid Array) package, facilitating compact designs.
5. Access Speed: Offers various speed grades, with a CAS latency (CL) of 11 or lower, providing quick data access.
6. Refresh: Supports both standard and self-refresh modes for power management.
7. Application: Ideal for memory applications in consumer electronics, computing, and networking.
These features make the W971GG6NB-25 suitable for high-performance applications requiring efficient and reliable memory solutions.
Package
The W971GG6NB-25 is a 512Mb DRAM chip packaged in aTSOP-II (Thin Small Outline Package) format. It is designed for high-density memory applications with a 54-pin configuration.
Pinout
The W971GG6NB-25 is a DDR2 DRAM memory chip with a pin count of 66.
Pin Functions:
- Data Bus (DQ0-DQ7): 8-bit data input/output.
- Address Bus (A0-A12): Used for addressing the memory cells.
- Control Signals: Includes CS (Chip Select), RAS (Row Address Strobe), CAS (Column Address Strobe), and WE (Write Enable) for controlling read/write operations.
- Clock Signal (CLK): Synchronizes data transmission.
- Power Supply Pins (VDD, VSS): Provide power and ground connections.
This chip operates at a frequency of up to 400 MHz and features a 1.8V operating voltage, making it suitable for various applications requiring high-speed memory.
Pin Functions:
- Data Bus (DQ0-DQ7): 8-bit data input/output.
- Address Bus (A0-A12): Used for addressing the memory cells.
- Control Signals: Includes CS (Chip Select), RAS (Row Address Strobe), CAS (Column Address Strobe), and WE (Write Enable) for controlling read/write operations.
- Clock Signal (CLK): Synchronizes data transmission.
- Power Supply Pins (VDD, VSS): Provide power and ground connections.
This chip operates at a frequency of up to 400 MHz and features a 1.8V operating voltage, making it suitable for various applications requiring high-speed memory.
Manufacturer
The W971GG6NB-25 is manufactured by Winbond Electronics Corporation, a Taiwanese company. Winbond specializes in the production of memory chips, including DRAM and Flash memory products. Established in 1987, the company focuses on providing a range of semiconductor solutions for various applications, including consumer electronics, automotive, and industrial devices. Winbond is recognized for its innovative memory technologies and is a key player in the global semiconductor industry.
Application
The W971GG6NB-25 is a DDR2 DRAM memory chip primarily used in applications such as consumer electronics, mobile devices, digital cameras, and computers. It is suitable for tasks requiring efficient data storage and retrieval, including gaming, multimedia processing, and embedded systems. Its low power consumption makes it ideal for portable devices, enhancing performance in applications that demand high-speed data access.
Equivalent
The W971GG6NB-25 chip is a 1Gb DDR2 SDRAM memory chip. Equivalent products include:
1. Micron MT47H64M16HR-25
2. Hynix H5TQ1G63AFR-25
3. Samsung K4T1G164QE-25
4. Nanya NT5CB128M16DP-25
Ensure to check specifications like speed, package type, and voltage for compatibility.
1. Micron MT47H64M16HR-25
2. Hynix H5TQ1G63AFR-25
3. Samsung K4T1G164QE-25
4. Nanya NT5CB128M16DP-25
Ensure to check specifications like speed, package type, and voltage for compatibility.
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