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W949D2DBJX5I
IC DRAM 512MBIT PAR 90VFBGA
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規格
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 512Mbit |
| Memory Organization | 16M x 32 |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
| Base Product Number | W949D2 |
概述
Description
It seems that "W949D2DBJX5I" may refer to a specific code, identifier, or product. However, without additional context, it's challenging to provide a precise introduction. If this is a model number, product code, or a reference to a specific device, technology, or concept, more details would help clarify its significance. Please provide further context or specify the area (e.g., technology, software, etc.) related to "W949D2DBJX5I" for a more accurate introduction.
Features
The W949D2DBJX5I is a DRAM component, specifically a 512Mb (megabit) DDR2 SDRAM memory chip. It is designed for high-performance applications and offers the following key features:
1. Capacity: 512Mb density, ideal for a variety of electronic devices.
2. Type: DDR2 (Double Data Rate 2), providing improved performance over DDR1.
3. Speed: Typically supports data rates up to 800 MT/s (megatransfers per second).
4. Interface: 16-bit wide data interface, allowing for efficient data handling.
5. Power Consumption: Operates at a lower voltage (1.8V), contributing to reduced power consumption compared to earlier generation DRAM.
6. Row/Column Architecture: Organized in a structured format, enhancing access times and efficiency.
7. Package Type: Usually available in standard packages like TSOP (Thin Small Outline Package) for easier integration into various circuit boards.
These features make the W949D2DBJX5I suitable for applications in computers, consumer electronics, and telecommunications.
1. Capacity: 512Mb density, ideal for a variety of electronic devices.
2. Type: DDR2 (Double Data Rate 2), providing improved performance over DDR1.
3. Speed: Typically supports data rates up to 800 MT/s (megatransfers per second).
4. Interface: 16-bit wide data interface, allowing for efficient data handling.
5. Power Consumption: Operates at a lower voltage (1.8V), contributing to reduced power consumption compared to earlier generation DRAM.
6. Row/Column Architecture: Organized in a structured format, enhancing access times and efficiency.
7. Package Type: Usually available in standard packages like TSOP (Thin Small Outline Package) for easier integration into various circuit boards.
These features make the W949D2DBJX5I suitable for applications in computers, consumer electronics, and telecommunications.
Package
The W949D2DBJX5I is a DRAM memory chip typically packaged in a TSOP (Thin Small Outline Package) format. This type of packaging is designed for high-density memory devices, allowing for efficient use of space on circuit boards.
Pinout
The W949D2DBJX5I is a DRAM memory chip from Winbond, specifically a 2Gb DDR2 SDRAM. It typically features a pin count of 78 pins in a TSOPII (Thin Small Outline Package) format.
The primary function of the W949D2DBJX5I is to provide dynamic random-access memory (DRAM) for various electronic devices, such as computers and consumer electronics. It supports high-speed data transfer, making it suitable for applications requiring efficient memory solutions. The chip operates at a standard voltage of 1.8V and is designed for use in systems that demand reliable and fast memory performance.
The primary function of the W949D2DBJX5I is to provide dynamic random-access memory (DRAM) for various electronic devices, such as computers and consumer electronics. It supports high-speed data transfer, making it suitable for applications requiring efficient memory solutions. The chip operates at a standard voltage of 1.8V and is designed for use in systems that demand reliable and fast memory performance.
Manufacturer
The W949D2DBJX5I is manufactured by Winbond Electronics Corporation, a Taiwanese company. Winbond specializes in the design and production of memory chips, including DRAM and NAND flash memory, primarily serving the consumer electronics, automotive, and industrial sectors. The company is well-known for its embedded memory solutions and is a significant player in the semiconductor industry, providing a range of memory products for applications such as smartphones, tablets, and various electronic devices.
Application
The W949D2DBJX5I is a DDR2 SDRAM memory chip commonly used in various electronics. Its application areas include computers, laptops, and servers for main memory, as well as in gaming consoles and networking equipment where high-speed data processing and storage are required. It supports applications that demand reliable performance in data-intensive environments.
Equivalent
The W949D2DBJX5I chip is a 1Gb DDR2 SDRAM memory chip. Equivalent products include:
1. MT47H128M8 (Micron)
2. K4T1G164QE (Samsung)
3. HYMD512M646C6 (Hynix)
4. IS42S16400D (Issi)
Ensure compatibility with your specific application when selecting alternatives.
1. MT47H128M8 (Micron)
2. K4T1G164QE (Samsung)
3. HYMD512M646C6 (Hynix)
4. IS42S16400D (Issi)
Ensure compatibility with your specific application when selecting alternatives.
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