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W632GU6NB-12
IC DRAM 2GBIT 96-VFBGA
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- 資料表 W632GU6NB-12 DataSheet
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規格
| Part Status | Obsolete |
| Base Product Number | W632GU6 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 2Gbit |
| Memory Organization | 128M x 16 |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-VFBGA |
| Supplier Device Package | 96-VFBGA (7.5x13) |
| Packaging | Tray |
| Access Time | 20 ns |
概述
Description
W632GU6NB-12 is a specific model of a semiconductor or integrated circuit, typically used in various electronic applications. While detailed information on this exact model may vary, it generally refers to a type of memory chip, microcontroller, or similar device designed for efficient processing and storage.
These components are crucial in modern electronics, enabling functionality in devices such as smartphones, computers, and embedded systems. The numbers and letters in the model name often signify specific features like memory size, processing capabilities, or design standards.
To gain comprehensive insights into the W632GU6NB-12, including its specifications, applications, and datasheet, it's advisable to consult the manufacturer's documentation or technical resources. This ensures accurate understanding and utilization in relevant projects or products.
These components are crucial in modern electronics, enabling functionality in devices such as smartphones, computers, and embedded systems. The numbers and letters in the model name often signify specific features like memory size, processing capabilities, or design standards.
To gain comprehensive insights into the W632GU6NB-12, including its specifications, applications, and datasheet, it's advisable to consult the manufacturer's documentation or technical resources. This ensures accurate understanding and utilization in relevant projects or products.
Features
The W632GU6NB-12 is a highly integrated, low-power CMOS SRAM (Static Random-Access Memory) device. Key features include:
1. Density: 6 Mbit capacity, organized as 512K x 8 bits.
2. Access Time: Fast access times, typically around 12 ns, suitable for high-speed applications.
3. Low Power Consumption: Designed for low-voltage operation, reducing power draw, making it ideal for battery-operated devices.
4. Voltage Range: Operates at a supply voltage of 2.7V to 3.6V, ensuring compatibility with various systems.
5. Easy Interface: Standard parallel interface for straightforward integration into existing designs.
6. Temperature Range: Available for industrial temperature ranges, ensuring reliability in diverse environments.
7. Write Cycle Time: Fast write cycle time, enhancing performance in data-intensive applications.
These features make the W632GU6NB-12 suitable for use in consumer electronics, automotive applications, and industrial controls.
1. Density: 6 Mbit capacity, organized as 512K x 8 bits.
2. Access Time: Fast access times, typically around 12 ns, suitable for high-speed applications.
3. Low Power Consumption: Designed for low-voltage operation, reducing power draw, making it ideal for battery-operated devices.
4. Voltage Range: Operates at a supply voltage of 2.7V to 3.6V, ensuring compatibility with various systems.
5. Easy Interface: Standard parallel interface for straightforward integration into existing designs.
6. Temperature Range: Available for industrial temperature ranges, ensuring reliability in diverse environments.
7. Write Cycle Time: Fast write cycle time, enhancing performance in data-intensive applications.
These features make the W632GU6NB-12 suitable for use in consumer electronics, automotive applications, and industrial controls.
Package
The W632GU6NB-12 is packaged in a 6-ball, 0.65mm pitch WLCSP (Wafer-Level Chip Scale Package).
Pinout
The W632GU6NB-12 is a DRAM chip with a pin count of 66. It is a 1Gb DDR2 SDRAM memory designed for high-performance applications. The main functions of this chip include data storage and memory access in computing systems, providing fast data transfer rates and efficient performance for tasks such as gaming, multimedia processing, and general computing. The "12" in the part number indicates a speed grade of 1.5 volts and a maximum data rate of 800 MT/s. It supports a 64-bit data width, making it suitable for use in various electronic devices like laptops and desktops.
Manufacturer
The W632GU6NB-12 is manufactured by Wistron NeWeb Corporation (WNC), a Taiwanese company. WNC specializes in wireless communication and networking solutions, focusing on the design and production of wireless modules, antennas, and IoT devices. The company serves various industries, including telecommunications, automotive, and consumer electronics, providing innovative and reliable connectivity solutions. Wistron NeWeb is known for its expertise in wireless technologies, enabling seamless communication in an increasingly connected world.
Application
The W632GU6NB-12 is a low-power, high-performance SRAM designed for applications such as portable devices, mobile computing, consumer electronics, and telecommunications. It is suitable for use in cache memory, buffering, and data storage in embedded systems where fast access and energy efficiency are critical. Additionally, it can be used in automotive electronics, IoT devices, and industrial automation systems.
Equivalent
The W632GU6NB-12 chip is a DDR3 SDRAM memory module. Equivalent products include the W632GU6KB-12 and W632GU6NB-15, as well as other DDR3 chips with similar specifications such as the MT41K256M16HA-125 or the Hynix H5TQ2G83CFR. Always verify the specific characteristics like speed, density, and pin configuration when searching for equivalents.
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