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VS-36MT120
BRIDGE RECT 3P 1.2KV 35A D-63
- 製造商
- 製造商。 部分 #VS-36MT120
- 包 5-Square, D-63
- 資料表 VS-36MT120 DataSheet
- 有現貨的2273
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規格
| Package | Bulk |
| ProductStatus | Active |
| DiodeType | Three Phase |
| Technology | Standard |
| Voltage-PeakReverse(Max) | 1.2 kV |
| Current-AverageRectified(Io) | 35 A |
| Current-ReverseLeakage@Vr | 10 µA @ 1200 V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | QC Terminal |
| Package/Case | 5-Square, D-63 |
概述
Description
The VS-36MT120 is a high-performance power semiconductor device, specifically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency and fast switching capabilities. It is commonly used in various applications, including power supplies, motor drives, and renewable energy systems.
Key features of the VS-36MT120 include a high voltage rating of 1200V, a low on-resistance value (Rds(on)), and a high current handling capacity. These attributes make it suitable for high-efficiency applications where thermal performance is critical. The device typically comes in a robust package, allowing for effective heat dissipation and easy integration into electronic circuits.
Overall, the VS-36MT120 is designed to enhance performance in demanding applications, contributing to energy savings and improved reliability in power electronics.
Key features of the VS-36MT120 include a high voltage rating of 1200V, a low on-resistance value (Rds(on)), and a high current handling capacity. These attributes make it suitable for high-efficiency applications where thermal performance is critical. The device typically comes in a robust package, allowing for effective heat dissipation and easy integration into electronic circuits.
Overall, the VS-36MT120 is designed to enhance performance in demanding applications, contributing to energy savings and improved reliability in power electronics.
Features
The VS-36MT120 is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. Key features include:
1. Maximum Drain-Source Voltage (VDS): 120V, suitable for high-voltage applications.
2. Continuous Drain Current (ID): Up to 36A, allowing for robust power handling.
3. Low On-Resistance (RDS(on)): Typically around 0.05 ohms, which minimizes conduction losses.
4. Fast Switching Speed: Enhances efficiency in switching applications, reducing heat generation.
5. Thermal Resistance: Low junction-to-case thermal resistance, which facilitates heat dissipation.
6. Package Type: Available in TO-220 or other configurations, ensuring compatibility with various PCB designs.
7. Applications: Ideal for use in power supplies, motor drives, and other high-frequency switching applications.
These features make the VS-36MT120 a versatile choice for designers seeking reliability and efficiency in their circuits.
1. Maximum Drain-Source Voltage (VDS): 120V, suitable for high-voltage applications.
2. Continuous Drain Current (ID): Up to 36A, allowing for robust power handling.
3. Low On-Resistance (RDS(on)): Typically around 0.05 ohms, which minimizes conduction losses.
4. Fast Switching Speed: Enhances efficiency in switching applications, reducing heat generation.
5. Thermal Resistance: Low junction-to-case thermal resistance, which facilitates heat dissipation.
6. Package Type: Available in TO-220 or other configurations, ensuring compatibility with various PCB designs.
7. Applications: Ideal for use in power supplies, motor drives, and other high-frequency switching applications.
These features make the VS-36MT120 a versatile choice for designers seeking reliability and efficiency in their circuits.
Package
The VS-36MT120 is typically packaged in a TO-220 format, which is a common power semiconductor package providing good thermal performance and ease of handling for high-voltage applications.
Pinout
The VS-36MT120 is an N-channel MOSFET from Vishay with a pin count of 3. The pins are typically designated as follows:
1. Gate (G): This pin is used for controlling the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is where the load current enters the MOSFET. It is connected to the output side of the circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The VS-36MT120 is designed for high-voltage applications, with a maximum drain-source voltage of 120V and a continuous drain current rating of 36A. It is commonly used in power management, switching applications, and power supplies due to its efficiency and thermal performance.
1. Gate (G): This pin is used for controlling the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is where the load current enters the MOSFET. It is connected to the output side of the circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The VS-36MT120 is designed for high-voltage applications, with a maximum drain-source voltage of 120V and a continuous drain current rating of 36A. It is commonly used in power management, switching applications, and power supplies due to its efficiency and thermal performance.
Manufacturer
The VS-36MT120 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, the company serves a wide range of industries, including automotive, industrial, consumer electronics, and telecommunications. Vishay is known for its extensive product portfolio, which includes resistors, capacitors, inductors, diodes, and more, catering to the growing demands of modern electronic applications. The company emphasizes innovation and quality, positioning itself as a key player in the electronics supply chain.
Application
The VS-36MT120 is a high-power MOSFET used in various applications, including power supply systems, motor drives, industrial automation, and renewable energy systems like solar inverters. Its features make it suitable for switch-mode power supplies (SMPS), DC-DC converters, and electric vehicles, where efficient switching and thermal performance are critical.
Equivalent
The VS-36MT120 is a Schottky diode with a 36A current rating and a 120V reverse voltage. Equivalent products include:
1. MBR20100CT (Monolithic Schottky)
2. STPS36L120 (STMicroelectronics)
3. SR36-12 (General Semiconductor)
4. 1N5822 (if current rating is acceptable)
Always verify specific ratings and characteristics to ensure compatibility in your application.
1. MBR20100CT (Monolithic Schottky)
2. STPS36L120 (STMicroelectronics)
3. SR36-12 (General Semiconductor)
4. 1N5822 (if current rating is acceptable)
Always verify specific ratings and characteristics to ensure compatibility in your application.
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