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VS-150EBU04
DIODE GP 400V 150A POWIRTAB
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規格
| Package | Bulk |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 400 V |
| Current-AverageRectified(Io) | 150A |
| Voltage-Forward(Vf)(Max)@If | 1.3 V @ 150 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 93 ns |
| Current-ReverseLeakage@Vr | 50 µA @ 400 V |
| MountingType | Chassis Mount |
| Package/Case | PowerTab™, PowIRtab™ |
| SupplierDevicePackage | PowIRtab™ |
概述
Description
The VS-150EBU04 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and switching. It features a maximum drain-source voltage (V_DS) of 150 volts and a continuous drain current (I_D) rating of up to 40 amps. This device is characterized by its low on-resistance, which enhances efficiency by reducing power losses during operation.
The VS-150EBU04 is suitable for use in DC-DC converters, motor drives, and other high-efficiency applications. Its robust construction and thermal performance enable reliable operation under challenging conditions. The device typically comes in a TO-220 package, facilitating easy heat dissipation and integration into different circuits.
Overall, the VS-150EBU04 is an ideal choice for engineers seeking a reliable, efficient, and versatile MOSFET for various electronic applications.
The VS-150EBU04 is suitable for use in DC-DC converters, motor drives, and other high-efficiency applications. Its robust construction and thermal performance enable reliable operation under challenging conditions. The device typically comes in a TO-220 package, facilitating easy heat dissipation and integration into different circuits.
Overall, the VS-150EBU04 is an ideal choice for engineers seeking a reliable, efficient, and versatile MOSFET for various electronic applications.
Features
The VS-150EBU04 is a high-performance N-channel MOSFET designed for various applications, including power management and switching circuits. Key features include:
1. Voltage Rating: Maximum drain-source voltage of 150V, suitable for high-voltage applications.
2. Current Handling: Capable of handling up to 49A continuous drain current, providing robust performance.
3. RDS(on): Low on-resistance (typically around 0.22 ohms at VGS = 10V), which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: VGS(th) is between 2V to 4V, allowing for effective control in low-voltage applications.
5. Package Type: Available in a TO-220 package, offering good thermal performance and ease of heat dissipation.
6. Fast Switching Speed: Designed for rapid switching, making it suitable for high-frequency applications.
This MOSFET is ideal for use in power supplies, motor drivers, and other electronic circuits requiring efficient switching capabilities.
1. Voltage Rating: Maximum drain-source voltage of 150V, suitable for high-voltage applications.
2. Current Handling: Capable of handling up to 49A continuous drain current, providing robust performance.
3. RDS(on): Low on-resistance (typically around 0.22 ohms at VGS = 10V), which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: VGS(th) is between 2V to 4V, allowing for effective control in low-voltage applications.
5. Package Type: Available in a TO-220 package, offering good thermal performance and ease of heat dissipation.
6. Fast Switching Speed: Designed for rapid switching, making it suitable for high-frequency applications.
This MOSFET is ideal for use in power supplies, motor drivers, and other electronic circuits requiring efficient switching capabilities.
Package
The VS-150EBU04 is packaged in a TO-247 format. This package type is commonly used for power semiconductor devices, providing good thermal performance and easy mounting for applications in power electronics.
Pinout
The VS-150EBU04 is a high-voltage, 150A, 400V ultrafast rectifier diode. It typically features a standard pin count of 2. The primary function of this device is to convert alternating current (AC) to direct current (DC) in various power applications, such as power supplies and inverters. It is designed to handle high current loads and provides low forward voltage drop, ensuring efficient operation and minimal energy loss during rectification. Additionally, it has characteristics suited for high-speed switching, making it ideal for use in applications that require fast recovery times.
Manufacturer
The VS-150EBU04 is manufactured by Vishay Semiconductor. Vishay is a global manufacturer specializing in discrete semiconductors and passive electronic components. The company is known for its wide range of products, including diodes, transistors, capacitors, resistors, and inductors, serving various industries such as automotive, aerospace, telecommunications, and consumer electronics. Vishay's commitment to innovation and quality has established it as a key player in the electronic components market.
Application
The VS-150EBU04 is a high-voltage, high-efficiency silicon power MOSFET primarily used in applications such as power supplies, motor drives, inverters, and energy conversion systems. It is suitable for use in industrial automation, renewable energy systems (like solar inverters), and electric vehicles due to its capability to handle high currents and voltages, providing reliable performance in demanding environments.
Equivalent
The VS-150EBU04 chip is a Schottky diode, and its equivalent products include the MBRS150T3, 1N5820, and STPS150. These components share similar electrical characteristics such as voltage and current ratings, making them suitable substitutes in various applications. Always verify specifications for compatibility before substitution.
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