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VNP35N07-E
IC PWR DRIVER N-CHAN 1:1 TO220AB
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- 資料表 VNP35N07-E DataSheet
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規格
| Series | OMNIFET™, VIPower™ |
| Part Status | Active |
| Base Product Number | VNP35N |
| Switch Type | General Purpose |
| Number of Outputs | 1 |
| Ratio - Input:Output | 1:1 |
| Output Configuration | Low Side |
| Output Type | N-Channel |
| Interface | On/Off |
| Voltage - Load | 55V (Max) |
| Voltage - Supply (Vcc/Vdd) | Not Required |
| Current - Output (Max) | 25A |
| Rds On (Typ) | 280mOhm (Max) |
| Input Type | Non-Inverting |
| Features | Status Flag |
| Fault Protection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
概述
Description
VNP35N07-E refers to a specific Earth science data product derived from the Visible Infrared Imaging Radiometer Suite (VIIRS) on the Suomi National Polar-orbiting Partnership (Suomi NPP) satellite. This data product focuses on snow cover and albedo, providing valuable insights into surface conditions over various terrains and regions. The "E" in the product name typically indicates a specific version or subset of the data tailored for certain applications or research needs.
The VNP35N07-E product is utilized by researchers and meteorologists to monitor and study snow cover dynamics, assess climate change impacts, and improve weather forecasting models. It captures data in high spatial and temporal resolution, allowing for detailed analysis of snow-covered areas. This information is crucial for understanding hydrological cycles, managing water resources, and evaluating seasonal and annual variations in snow cover. The product's integration of satellite imagery and advanced algorithms ensures accurate representation of snow characteristics, supporting various scientific and practical applications in environmental monitoring and management.
The VNP35N07-E product is utilized by researchers and meteorologists to monitor and study snow cover dynamics, assess climate change impacts, and improve weather forecasting models. It captures data in high spatial and temporal resolution, allowing for detailed analysis of snow-covered areas. This information is crucial for understanding hydrological cycles, managing water resources, and evaluating seasonal and annual variations in snow cover. The product's integration of satellite imagery and advanced algorithms ensures accurate representation of snow characteristics, supporting various scientific and practical applications in environmental monitoring and management.
Features
The VNP35N07-E is a power MOSFET designed for use in applications requiring efficient switching and power handling. Key features include:
1. N-channel MOSFET: Optimized for high efficiency in switching applications.
2. Voltage Rating: It features a drain-source voltage (V_DS) of 70V.
3. Current Rating: The continuous drain current (I_D) is 30A, making it suitable for moderate to high-power applications.
4. Low On-Resistance: It offers low R_DS(on) for reduced power loss and improved efficiency.
5. Fast Switching: Designed to switch quickly, reducing transition losses.
6. Thermal Management: Available in a DPAK package for effective heat dissipation.
7. Robustness: It includes built-in ESD protection to ensure reliability.
8. Applications: Commonly used in automotive systems, motor drivers, power management, and DC-DC converters.
The VNP35N07-E MOSFET's balance of voltage and current handling, along with its efficiency and reliability, make it a versatile component for various electronic applications.
1. N-channel MOSFET: Optimized for high efficiency in switching applications.
2. Voltage Rating: It features a drain-source voltage (V_DS) of 70V.
3. Current Rating: The continuous drain current (I_D) is 30A, making it suitable for moderate to high-power applications.
4. Low On-Resistance: It offers low R_DS(on) for reduced power loss and improved efficiency.
5. Fast Switching: Designed to switch quickly, reducing transition losses.
6. Thermal Management: Available in a DPAK package for effective heat dissipation.
7. Robustness: It includes built-in ESD protection to ensure reliability.
8. Applications: Commonly used in automotive systems, motor drivers, power management, and DC-DC converters.
The VNP35N07-E MOSFET's balance of voltage and current handling, along with its efficiency and reliability, make it a versatile component for various electronic applications.
Package
The package type VNP35N07-E refers to a MOSFET transistor housed in a DPAK (TO-252) package. DPAK is a surface-mount package that is designed for efficient thermal performance and is commonly used in power electronics applications.
Pinout
The VNP35N07-E is a MOSFET designed for automotive and industrial applications. It typically comes in a D2PAK or TO-263 package format, which is a surface-mountable package with three pins and an additional tab for better heat dissipation. Here’s a concise overview of its pin configuration:
1. Pin 1 (Gate): This pin is used to control the MOSFET. By applying a voltage to the gate, you can switch the device on or off.
2. Pin 2 (Drain): The drain is the terminal through which the main current flows when the MOSFET is on. It is connected to the load in most applications.
3. Pin 3 (Source): The source is the terminal through which current leaves the MOSFET. It is typically connected to ground or the negative side of the power supply.
4. Tab (Drain): The tab is also connected to the drain and is used to dissipate heat generated by the device during operation.
The VNP35N07-E is designed for high efficiency and reliability in applications requiring fast switching and low on-state resistance.
1. Pin 1 (Gate): This pin is used to control the MOSFET. By applying a voltage to the gate, you can switch the device on or off.
2. Pin 2 (Drain): The drain is the terminal through which the main current flows when the MOSFET is on. It is connected to the load in most applications.
3. Pin 3 (Source): The source is the terminal through which current leaves the MOSFET. It is typically connected to ground or the negative side of the power supply.
4. Tab (Drain): The tab is also connected to the drain and is used to dissipate heat generated by the device during operation.
The VNP35N07-E is designed for high efficiency and reliability in applications requiring fast switching and low on-state resistance.
Manufacturer
The VNP35N07-E is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products, including discrete and integrated circuits. The company serves various sectors, including automotive, industrial, personal electronics, and communications equipment. Known for its innovation and technology leadership, STMicroelectronics is among the leading players in the semiconductor industry, providing solutions that drive smarter and more energy-efficient electronics.
Application
The VNP35N07-E is a type of N-channel MOSFET commonly used in power electronics. Its application areas include power supply units, motor drives, lighting systems, and DC-DC converters. It's well-suited for switching applications due to its low on-state resistance and fast switching speed. Additionally, it's often used in battery management systems and industrial automation for efficient and reliable power control.
Equivalent
The VNP35N07-E is a power MOSFET commonly used in automotive and industrial applications. Equivalent products include the STMicroelectronics VNP35N07, and similar MOSFETs like the IRFZ46N by Infineon or the NTP35N06 from ON Semiconductor. When considering equivalents, ensure that key specifications such as voltage, current rating, Rds(on), and package type match the original VNP35N07-E for compatibility in your applications.
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