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VNN1NV04PTR-E
IC PWR DRIVER N-CHAN 1:1 SOT223
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- 包 SOT-223
- 資料表 VNN1NV04PTR-E DataSheet
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET II™, VIPower™ |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 36V (Max) |
| Voltage-Supply(Vcc/Vdd) | Not Required |
| Current-Output(Max) | 1.7A |
| RdsOn(Typ) | 250mOhm (Max) |
| InputType | Non-Inverting |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
概述
Description
The VNN1NV04PTR-E is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. It is designed for use in various electronic applications requiring efficient power management, such as DC-DC converters, motor drives, and switching regulators.
Key features of the VNN1NV04PTR-E include a low on-resistance, which ensures minimal power loss and optimal efficiency, and a high-speed switching capability, which is crucial for high-frequency applications. The MOSFET typically operates at a voltage rating of around 40V and can handle significant current levels, making it suitable for medium to high power applications.
Additionally, the VNN1NV04PTR-E is housed in a compact package, allowing for efficient use of space in circuit designs. Its robust construction ensures reliability and longevity even in demanding environments. Overall, this MOSFET is a versatile component for engineers seeking to optimize the performance and efficiency of power electronic systems.
Key features of the VNN1NV04PTR-E include a low on-resistance, which ensures minimal power loss and optimal efficiency, and a high-speed switching capability, which is crucial for high-frequency applications. The MOSFET typically operates at a voltage rating of around 40V and can handle significant current levels, making it suitable for medium to high power applications.
Additionally, the VNN1NV04PTR-E is housed in a compact package, allowing for efficient use of space in circuit designs. Its robust construction ensures reliability and longevity even in demanding environments. Overall, this MOSFET is a versatile component for engineers seeking to optimize the performance and efficiency of power electronic systems.
Features
The VNN1NV04PTR-E is a N-channel MOSFET transistor designed for various electronics applications. Key features include:
1. Voltage and Current Ratings: It typically handles a drain-source voltage (V_DS) of up to 40V and supports a continuous drain current (I_D) of around 200mA.
2. Package: Available in a compact SOT-23 package, which is suitable for space-constrained designs.
3. Low On-Resistance: The MOSFET features low on-state resistance (R_DS(on)), enhancing efficiency by reducing power loss.
4. Fast Switching: It supports rapid switching speeds, making it suitable for high-frequency applications.
5. Logic Level Gate Drive: The transistor can be driven by standard low voltage logic levels, which simplifies interfacing with microcontrollers and other digital circuits.
6. Thermal Performance: Designed for efficient heat dissipation, allowing reliable operation under varying thermal conditions.
These features make the VNN1NV04PTR-E ideal for use in power management, load switching, and signal amplification applications.
Please consult the datasheet or product documentation for specific and up-to-date technical details.
1. Voltage and Current Ratings: It typically handles a drain-source voltage (V_DS) of up to 40V and supports a continuous drain current (I_D) of around 200mA.
2. Package: Available in a compact SOT-23 package, which is suitable for space-constrained designs.
3. Low On-Resistance: The MOSFET features low on-state resistance (R_DS(on)), enhancing efficiency by reducing power loss.
4. Fast Switching: It supports rapid switching speeds, making it suitable for high-frequency applications.
5. Logic Level Gate Drive: The transistor can be driven by standard low voltage logic levels, which simplifies interfacing with microcontrollers and other digital circuits.
6. Thermal Performance: Designed for efficient heat dissipation, allowing reliable operation under varying thermal conditions.
These features make the VNN1NV04PTR-E ideal for use in power management, load switching, and signal amplification applications.
Please consult the datasheet or product documentation for specific and up-to-date technical details.
Package
The package type of VNN1NV04PTR-E is a PowerPAK® SO-8, which is a surface-mount package commonly used for power MOSFETs. It offers efficient thermal performance and low on-resistance, making it suitable for compact power management applications.
Pinout
The VNN1NV04PTR-E is a power MOSFET from STMicroelectronics. It is a single N-channel MOSFET that typically comes in a SOT-223 package. The pin count for this device is 3, plus a tab which is often used as a fourth connection (commonly connected to the source).
The primary function of the VNN1NV04PTR-E is to act as a switch or amplifier in various electronics applications. As an N-channel MOSFET, it allows current to flow from the drain to the source when a positive voltage is applied to the gate relative to the source. This device is often used in power management applications, load switching, and motor drives, thanks to its low on-state resistance and enhanced switching performance.
For specific applications and characteristics, including maximum ratings and electrical specifications, it is always a good idea to refer to the datasheet provided by the manufacturer.
The primary function of the VNN1NV04PTR-E is to act as a switch or amplifier in various electronics applications. As an N-channel MOSFET, it allows current to flow from the drain to the source when a positive voltage is applied to the gate relative to the source. This device is often used in power management applications, load switching, and motor drives, thanks to its low on-state resistance and enhanced switching performance.
For specific applications and characteristics, including maximum ratings and electrical specifications, it is always a good idea to refer to the datasheet provided by the manufacturer.
Manufacturer
The VNN1NV04PTR-E is manufactured by STMicroelectronics. STMicroelectronics is a leading global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. They cater to various sectors, including automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is known for its innovation in integrated circuits and discrete devices, providing solutions that enable smarter driving, factories, homes, and cities.
Application
The VNN1NV04PTR-E is a single-channel, load switch IC with an integrated MOSFET, used primarily in automotive and industrial applications. Its main application areas include power management systems, battery-operated devices, and electronic control units (ECUs). It is suitable for managing high-side loads with low power consumption and provides protection features like thermal shutdown and current limiting, ensuring reliable operation in environments with fluctuating loads and temperatures.
Equivalent
The VNN1NV04PTR-E is a power MOSFET from STMicroelectronics. Equivalent products are typically those with similar voltage, current ratings, and package type. Possible equivalents might include:
1. IRLZ44N by Infineon (International Rectifier)
2. NTD2955 by ON Semiconductor
3. FQP30N06L by Fairchild Semiconductor
Verify specific electrical characteristics and package compatibility to ensure suitability. Always check the manufacturer's datasheet for exact specifications and comparisons.
1. IRLZ44N by Infineon (International Rectifier)
2. NTD2955 by ON Semiconductor
3. FQP30N06L by Fairchild Semiconductor
Verify specific electrical characteristics and package compatibility to ensure suitability. Always check the manufacturer's datasheet for exact specifications and comparisons.
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