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VND5N07TR-E
IC PWR DRIVER N-CHANNEL 1:1 DPAK
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- 製造商。 部分 #VND5N07TR-E
- 包 TO-252-3
- 資料表 VND5N07TR-E DataSheet
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET II™, VIPower™ |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 55V (Max) |
| Voltage-Supply(Vcc/Vdd) | Not Required |
| Current-Output(Max) | 3.5A |
| RdsOn(Typ) | 200mOhm (Max) |
| InputType | Non-Inverting |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
概述
Description
The VND5N07TR-E is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for electronic applications requiring efficient power management. Manufactured by STMicroelectronics, this device is part of the VIPower™ family, which is known for its robust performance in automotive and industrial environments.
Key specifications of the VND5N07TR-E include a maximum drain-source voltage (V_ds) of 70V and a continuous drain current (I_d) of 5A. It features low on-resistance, enhancing its efficiency by minimizing power loss during operation. The MOSFET is housed in a DPAK package, suitable for surface-mount technology, making it easy to integrate into compact circuit designs.
The device also includes built-in protection features such as over-temperature and over-current protections, ensuring reliability and safety under varying operational conditions. Its fast switching capabilities make it ideal for applications like motor control, power management, and switching regulators. Overall, the VND5N07TR-E offers a balance of performance, reliability, and efficiency, making it a versatile component in modern electronic circuits.
Key specifications of the VND5N07TR-E include a maximum drain-source voltage (V_ds) of 70V and a continuous drain current (I_d) of 5A. It features low on-resistance, enhancing its efficiency by minimizing power loss during operation. The MOSFET is housed in a DPAK package, suitable for surface-mount technology, making it easy to integrate into compact circuit designs.
The device also includes built-in protection features such as over-temperature and over-current protections, ensuring reliability and safety under varying operational conditions. Its fast switching capabilities make it ideal for applications like motor control, power management, and switching regulators. Overall, the VND5N07TR-E offers a balance of performance, reliability, and efficiency, making it a versatile component in modern electronic circuits.
Features
The VND5N07TR-E is a power MOSFET produced by STMicroelectronics. Key features of this component include:
1. N-Channel Enhancement Mode: It is an N-channel MOSFET, which means it turns on when positive voltage is applied to the gate relative to the source.
2. Low On-Resistance: This MOSFET has low on-resistance, which minimizes energy loss and heat generation during operation.
3. High-Speed Switching: Designed for fast switching applications, improving efficiency in power management systems.
4. Voltage Rating: It typically offers a drain-source voltage rating of up to 70V, suitable for various applications in power electronics.
5. Current Capability: Capable of handling a continuous current, making it suitable for medium power applications.
6. Thermal Performance: The package design supports efficient heat dissipation, enhancing reliability under high-power conditions.
7. Compact Package: Comes in a TO-252 package, which is compact for space-constrained applications.
8. Applications: Commonly used in automotive, industrial, and consumer electronics for functions such as load switching and DC-DC converters.
These features make the VND5N07TR-E a versatile choice for designers looking for efficient and reliable power management solutions.
1. N-Channel Enhancement Mode: It is an N-channel MOSFET, which means it turns on when positive voltage is applied to the gate relative to the source.
2. Low On-Resistance: This MOSFET has low on-resistance, which minimizes energy loss and heat generation during operation.
3. High-Speed Switching: Designed for fast switching applications, improving efficiency in power management systems.
4. Voltage Rating: It typically offers a drain-source voltage rating of up to 70V, suitable for various applications in power electronics.
5. Current Capability: Capable of handling a continuous current, making it suitable for medium power applications.
6. Thermal Performance: The package design supports efficient heat dissipation, enhancing reliability under high-power conditions.
7. Compact Package: Comes in a TO-252 package, which is compact for space-constrained applications.
8. Applications: Commonly used in automotive, industrial, and consumer electronics for functions such as load switching and DC-DC converters.
These features make the VND5N07TR-E a versatile choice for designers looking for efficient and reliable power management solutions.
Package
The VND5N07TR-E is a power MOSFET in a DPAK package, which is a type of surface-mount package commonly used for electronic components, particularly in power and high-frequency applications.
Pinout
The VND5N07TR-E is a power MOSFET designed for use in automotive and industrial applications. It comes in a DPAK package and typically has three pins: Gate (G), Drain (D), and Source (S). These pins are standard for most MOSFETs:
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, it allows the flow of current between the drain and source.
2. Drain (D): This pin is where the current flows out of, controlled by the gate voltage.
3. Source (S): This pin is where the current enters the MOSFET.
The VND5N07TR-E offers low on-resistance and fast switching, making it suitable for applications like high-speed switching, load switching, and motor control. The device can handle significant current and voltage, which makes it ideal for robust applications. Always consult the manufacturer's datasheet for precise specifications and details.
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, it allows the flow of current between the drain and source.
2. Drain (D): This pin is where the current flows out of, controlled by the gate voltage.
3. Source (S): This pin is where the current enters the MOSFET.
The VND5N07TR-E offers low on-resistance and fast switching, making it suitable for applications like high-speed switching, load switching, and motor control. The device can handle significant current and voltage, which makes it ideal for robust applications. Always consult the manufacturer's datasheet for precise specifications and details.
Manufacturer
The VND5N07TR-E is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. They serve various sectors, including automotive, industrial, personal electronics, and communications, among others. Known for their innovation and advanced technology, STMicroelectronics plays a crucial role in providing components that are essential for the functioning of a wide array of electronic devices and systems.
Application
The VND5N07TR-E is a power MOSFET designed for automotive and industrial applications. Its application areas include motor control, lighting systems, power management, and battery protection. This component is suitable for use in automotive electronic control units (ECUs), electric window lifts, and seat adjustments. Additionally, it finds use in industrial automation and control systems, offering efficient power switching and thermal performance.
Equivalent
The VND5N07TR-E is an N-channel MOSFET. Equivalent products include the IRFZ44N, IRLZ44N, and STP55NF06, which have similar characteristics such as voltage and current ratings. Ensure to check the specific parameters like Vds, Id, and Rds(on) for compatibility in your application. Always refer to datasheets for precise matching.
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