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VNB35N07TR-E
IC PWR DRIVER N-CHAN 1:1 D2PAK
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- 製造商。 部分 #VNB35N07TR-E
- 包 TO-263-3,D2PAK(2Leads+Tab),TO-263AB
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OMNIFET™, VIPower™ |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 55V (Max) |
| Voltage-Supply(Vcc/Vdd) | Not Required |
| Current-Output(Max) | 25A |
| RdsOn(Typ) | 28mOhm (Max) |
| InputType | Non-Inverting |
| Features | Status Flag |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
概述
Description
The VNB35N07TR-E is a power MOSFET from STMicroelectronics, designed for automotive and industrial applications. It's part of the VIPower M0-7 family, featuring an N-channel enhancement mode and integrated protection functions. This MOSFET is known for its robustness and reliability, making it suitable for harsh environments.
Key features of the VNB35N07TR-E include:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 70V and a continuous drain current (I_D) of 35A.
2. Low On-State Resistance: With a low R_DS(on), it ensures efficient performance by minimizing power losses.
3. Protection Features: Includes thermal shutdown, overcurrent, and ESD protection to enhance safety and durability.
4. Package: Typically housed in a DPAK package, which provides a compact and efficient thermal design suitable for surface mounting.
Applications for the VNB35N07TR-E include motor control, DC-DC converters, and various switching applications where efficient and reliable power management is crucial. Its integration of protective features alongside its performance capabilities makes it a versatile choice for power electronic systems.
Key features of the VNB35N07TR-E include:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 70V and a continuous drain current (I_D) of 35A.
2. Low On-State Resistance: With a low R_DS(on), it ensures efficient performance by minimizing power losses.
3. Protection Features: Includes thermal shutdown, overcurrent, and ESD protection to enhance safety and durability.
4. Package: Typically housed in a DPAK package, which provides a compact and efficient thermal design suitable for surface mounting.
Applications for the VNB35N07TR-E include motor control, DC-DC converters, and various switching applications where efficient and reliable power management is crucial. Its integration of protective features alongside its performance capabilities makes it a versatile choice for power electronic systems.
Features
The VNB35N07TR-E is a power MOSFET designed for various electronic applications. Key features include:
1. N-channel MOSFET: Offers efficient switching and amplification suited for high-speed operations.
2. Low On-resistance: Typically features a low R_DS(on) for improved efficiency and reduced power loss.
3. High Current Capability: Can handle substantial current loads, making it suitable for power-intensive applications.
4. Voltage Rating: Operates with a drain-source voltage (V_DS) of up to 70V, providing flexibility for different circuits.
5. Automotive Grade: Often used in automotive applications due to its reliability and performance under harsh conditions.
6. SMD Package: Comes in a surface-mount package, allowing for compact design and easy integration on printed circuit boards (PCBs).
7. Thermal Performance: Designed to handle thermal stress effectively, ensuring stable performance over a wide temperature range.
These features make the VNB35N07TR-E a versatile choice for applications requiring robust and efficient power management.
1. N-channel MOSFET: Offers efficient switching and amplification suited for high-speed operations.
2. Low On-resistance: Typically features a low R_DS(on) for improved efficiency and reduced power loss.
3. High Current Capability: Can handle substantial current loads, making it suitable for power-intensive applications.
4. Voltage Rating: Operates with a drain-source voltage (V_DS) of up to 70V, providing flexibility for different circuits.
5. Automotive Grade: Often used in automotive applications due to its reliability and performance under harsh conditions.
6. SMD Package: Comes in a surface-mount package, allowing for compact design and easy integration on printed circuit boards (PCBs).
7. Thermal Performance: Designed to handle thermal stress effectively, ensuring stable performance over a wide temperature range.
These features make the VNB35N07TR-E a versatile choice for applications requiring robust and efficient power management.
Package
The VNB35N07TR-E is packaged in a TO-263 (D2PAK) surface-mount package.
Pinout
The VNB35N07TR-E is a power MOSFET produced by STMicroelectronics. It is part of the VIPower family of devices and is designed for automotive and industrial applications. The device typically comes in a standard D²PAK (TO-263) package, which generally has three pins plus the tab.
The pin configuration and functions are as follows:
1. Pin 1 (Gate): This is the control pin used to turn the MOSFET on or off.
2. Pin 2 (Drain): This pin is the output terminal for the device, through which the main current flows.
3. Pin 3 (Source): This is the ground reference pin for the internal circuitry of the MOSFET.
The tab of the package, which is connected to the drain, serves as a heat sink and is also involved in the main current flow.
This MOSFET is specifically designed to handle high current and voltage levels, making it suitable for switching and amplifying applications in automotive electronics like motor drives and solenoid control.
The pin configuration and functions are as follows:
1. Pin 1 (Gate): This is the control pin used to turn the MOSFET on or off.
2. Pin 2 (Drain): This pin is the output terminal for the device, through which the main current flows.
3. Pin 3 (Source): This is the ground reference pin for the internal circuitry of the MOSFET.
The tab of the package, which is connected to the drain, serves as a heat sink and is also involved in the main current flow.
This MOSFET is specifically designed to handle high current and voltage levels, making it suitable for switching and amplifying applications in automotive electronics like motor drives and solenoid control.
Manufacturer
The VNB35N07TR-E is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company serves various sectors, including automotive, industrial, personal electronics, communication equipment, and computers. With a focus on innovation and sustainability, STMicroelectronics aims to provide solutions that address challenges in energy efficiency, security, and smart technologies.
Application
The VNB35N07TR-E is a power MOSFET used primarily in automotive applications. It is suitable for high-side switching in motor control, lighting, and power distribution systems. The device's robust design makes it ideal for managing inductive loads in automotive environments, such as electric windows, seats, and wipers. Its protection features, including over-temperature and overcurrent protections, enhance reliability and safety in these applications.
Equivalent
The VNB35N07TR-E is a power MOSFET produced by STMicroelectronics. Equivalent products are typically determined by matching key specifications such as voltage, current, Rds(on), and package type. Some potential equivalents from other manufacturers might include the IRFZ44N from International Rectifier or the FQP30N06L from ON Semiconductor, provided they meet your specific requirements. Always verify the datasheets to ensure compatibility with your application.
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