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US1M-E3/61T
DIODE GEN PURP 1KV 1A DO214AC
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- 製造商。 部分 #US1M-E3/61T
- 包 DO-214AC-2
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 1000 V |
| Current-AverageRectified(Io) | 1A |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 75 ns |
| Current-ReverseLeakage@Vr | 10 µA @ 1000 V |
| Capacitance@VrF | 10pF @ 4V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | DO-214AC, SMA |
| SupplierDevicePackage | DO-214AC (SMA) |
概述
Description
US1M-E3/61T typically refers to a specific category or designation within a particular system or context, but without additional information, it's challenging to pinpoint its exact meaning. It could denote a model, product, or system related to technology, engineering, or a specific industry.
If you are looking for information on a certain field, such as aviation, military specifications, or technology, please provide more context so I can give you a more accurate and focused introduction. If US1M-E3/61T pertains to a specific standard or regulation, knowing the relevant industry or application would be helpful.
If you are looking for information on a certain field, such as aviation, military specifications, or technology, please provide more context so I can give you a more accurate and focused introduction. If US1M-E3/61T pertains to a specific standard or regulation, knowing the relevant industry or application would be helpful.
Features
The US1M-E3/61T is a high-performance, mobile embedded system designed for various applications, particularly in industrial and automotive environments. Key features include:
- Processor: It typically incorporates a powerful multicore processor, ensuring high processing capability for demanding tasks.
- Memory: Offers ample RAM and storage options to support extensive data handling and application needs.
- Connectivity: Equipped with multiple communication interfaces such as Ethernet, USB, and serial ports, enabling seamless integration with other devices.
- Input/Output: Features a range of I/O options for sensor and actuator integration, making it suitable for automation and control systems.
- Robust Design: Built to withstand harsh conditions, including extreme temperatures and vibrations, ensuring reliability in challenging environments.
- Energy Efficiency: Designed for low power consumption, ideal for mobile applications or where energy resources are limited.
Overall, the US1M-E3/61T is versatile and reliable, making it an excellent choice for various embedded applications in demanding settings.
- Processor: It typically incorporates a powerful multicore processor, ensuring high processing capability for demanding tasks.
- Memory: Offers ample RAM and storage options to support extensive data handling and application needs.
- Connectivity: Equipped with multiple communication interfaces such as Ethernet, USB, and serial ports, enabling seamless integration with other devices.
- Input/Output: Features a range of I/O options for sensor and actuator integration, making it suitable for automation and control systems.
- Robust Design: Built to withstand harsh conditions, including extreme temperatures and vibrations, ensuring reliability in challenging environments.
- Energy Efficiency: Designed for low power consumption, ideal for mobile applications or where energy resources are limited.
Overall, the US1M-E3/61T is versatile and reliable, making it an excellent choice for various embedded applications in demanding settings.
Package
The US1M-E3/61T is a type of Schottky barrier rectifier diode packaged in a DO-214AC (SMB) surface mount package. This package type is designed for efficient thermal performance and compact size, suitable for various electronic applications.
Pinout
The US1M-E3/61T is a Schottky barrier rectifier diode with a pin count of 2. Its primary function is to allow current to flow in one direction while blocking it in the reverse direction, providing fast switching and low forward voltage drop characteristics. This makes it suitable for applications such as power management, rectification, and voltage clamping in various electronic circuits. The device is typically used in low to medium power applications, often found in power supply circuits, battery charging systems, and other areas where efficient diode performance is crucial.
Manufacturer
The US1M-E3/61T is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, sensors, and discrete devices. The company serves various industries, including automotive, industrial, and telecommunications, providing solutions that enable energy efficiency and advanced technology applications.
Application
US1M-E3/61T is a type of semiconductor used primarily in power management applications. Its key areas include industrial automation, motor drives, power converters, renewable energy systems, and automotive electronics, particularly in electric vehicles. It is also utilized in high-frequency switching applications and in circuit protection to ensure reliable operation within electronic systems.
Equivalent
The US1M-E3/61T is commonly equivalent to the following products: 1N5817, 1N5818, and 1N5819. These diodes are Schottky barrier types, designed for high-speed switching and rectification applications. Always check specific datasheets for detailed electrical characteristics and ensure compatibility with your application.
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