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UCC27712QDRQ1
IC GATE DRVR HALF-BRIDGE 8SOIC
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規格
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, MOSFET (N-Channel, P-Channel) |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 1.5V, 1.6V |
| Current - Peak Output (Source, Sink) | 1.8A, 2.8A |
| Rise / Fall Time (Typ) | 16ns, 10ns |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | UCC27712 |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Grade | Automotive |
| Qualification | AEC-Q100 |
概述
Description
The UCC27712QDRQ1 is a high-performance gate driver from Texas Instruments, designed for automotive and industrial applications. It is particularly tailored for driving power MOSFETs and IGBTs in half-bridge configurations, commonly used in power supplies and motor control systems. The device features a wide operating voltage range of 10 V to 20 V, making it versatile for various applications. It provides a peak source current of 1.2 A and a peak sink current of 2.5 A, ensuring efficient switching of power transistors.
The UCC27712QDRQ1 includes several protection features such as UVLO (Under-Voltage Lockout) for both high-side and low-side drivers, ensuring reliable operation under fluctuating voltage conditions. It also features an enable pin for additional control flexibility and a split output that allows for independent tuning of turn-on and turn-off speeds, optimizing switching performance.
With an automotive-grade qualification (AEC-Q100), the UCC27712QDRQ1 is suitable for harsh environments, offering robustness and reliability. Its thermal shutdown protection further safeguards the device against overheating, enhancing its longevity and performance in demanding applications.
The UCC27712QDRQ1 includes several protection features such as UVLO (Under-Voltage Lockout) for both high-side and low-side drivers, ensuring reliable operation under fluctuating voltage conditions. It also features an enable pin for additional control flexibility and a split output that allows for independent tuning of turn-on and turn-off speeds, optimizing switching performance.
With an automotive-grade qualification (AEC-Q100), the UCC27712QDRQ1 is suitable for harsh environments, offering robustness and reliability. Its thermal shutdown protection further safeguards the device against overheating, enhancing its longevity and performance in demanding applications.
Features
The UCC27712QDRQ1 is a high-performance gate driver designed for automotive applications. Key features include:
1. Dual-Channel Gate Driver: Capable of driving both high-side and low-side N-channel MOSFETs.
2. Wide Supply Voltage Range: Operates from 10 V to 20 V, providing flexibility for various applications.
3. High Output Current: Delivers peak source and sink currents of up to 4 A, ensuring fast switching.
4. Integrated Bootstrap Diode: Simplifies circuit design and reduces the number of external components.
5. Enhanced Protection Features: Includes undervoltage lockout (UVLO) for both VDD and floating channel, preventing operation under insufficient voltage conditions.
6. Propagation Delay Matching: Ensures tight control of timing between high-side and low-side switches, improving efficiency.
7. Robust Design: Automotive-qualified with AEC-Q100 certification, suitable for harsh environments.
8. Temperature Range: Operates effectively from -40°C to 125°C, accommodating extreme temperature conditions.
These features make the UCC27712QDRQ1 suitable for applications such as DC-DC converters, motor drives, and other power management systems in the automotive sector.
1. Dual-Channel Gate Driver: Capable of driving both high-side and low-side N-channel MOSFETs.
2. Wide Supply Voltage Range: Operates from 10 V to 20 V, providing flexibility for various applications.
3. High Output Current: Delivers peak source and sink currents of up to 4 A, ensuring fast switching.
4. Integrated Bootstrap Diode: Simplifies circuit design and reduces the number of external components.
5. Enhanced Protection Features: Includes undervoltage lockout (UVLO) for both VDD and floating channel, preventing operation under insufficient voltage conditions.
6. Propagation Delay Matching: Ensures tight control of timing between high-side and low-side switches, improving efficiency.
7. Robust Design: Automotive-qualified with AEC-Q100 certification, suitable for harsh environments.
8. Temperature Range: Operates effectively from -40°C to 125°C, accommodating extreme temperature conditions.
These features make the UCC27712QDRQ1 suitable for applications such as DC-DC converters, motor drives, and other power management systems in the automotive sector.
Package
The UCC27712QDRQ1 is a half-bridge gate driver from Texas Instruments, and it is available in an 8-pin SOIC (Small Outline Integrated Circuit) package.
Pinout
The UCC27712QDRQ1 is a dual-channel, high-side, and low-side gate driver from Texas Instruments, designed for driving power MOSFETs and IGBTs in various applications. This device is typically used in automotive and industrial applications that require high-performance and efficient switching.
The UCC27712QDRQ1 comes in an 8-pin SOIC package. The pin functions are as follows:
1. VDD: Supply voltage for the driver.
2. HB: High-side floating supply voltage.
3. HO: High-side gate drive output.
4. HS: High-side source connection.
5. HI: High-side input signal.
6. LI: Low-side input signal.
7. LO: Low-side gate drive output.
8. VSS: Ground reference for the driver.
This gate driver provides undervoltage lockout, high current drive capability, and fast switching speed, making it suitable for high-frequency applications.
The UCC27712QDRQ1 comes in an 8-pin SOIC package. The pin functions are as follows:
1. VDD: Supply voltage for the driver.
2. HB: High-side floating supply voltage.
3. HO: High-side gate drive output.
4. HS: High-side source connection.
5. HI: High-side input signal.
6. LI: Low-side input signal.
7. LO: Low-side gate drive output.
8. VSS: Ground reference for the driver.
This gate driver provides undervoltage lockout, high current drive capability, and fast switching speed, making it suitable for high-frequency applications.
Manufacturer
The UCC27712QDRQ1 is manufactured by Texas Instruments (TI). Texas Instruments is an American technology company headquartered in Dallas, Texas. It is a global leader in the design and manufacture of semiconductors and integrated circuits, which are used in a wide variety of electronic applications. TI's product portfolio includes analog electronics, digital signal processors, microcontrollers, and other semiconductor devices. The company serves various industries, including automotive, industrial, personal electronics, communications equipment, and enterprise systems.
Application
The UCC27712QDRQ1 is a Texas Instruments high-performance gate driver used in automotive and industrial applications. Its primary application areas include driving MOSFETs and IGBTs in power converters, motor drives, and inverters. It's designed for high-side and low-side gate driving in half-bridge and full-bridge configurations, making it suitable for applications such as electric vehicle powertrains, renewable energy systems, uninterruptible power supplies (UPS), and industrial motor controls, where efficient and reliable switching is crucial.
Equivalent
The UCC27712QDRQ1 is a high-side/low-side gate driver from Texas Instruments designed for driving power MOSFETs or IGBTs. Equivalent products may include the IRS2110 series from Infineon, FAN7392 from ON Semiconductor, and the HIP2101 series from Renesas. These alternatives have similar functionalities, including high-side and low-side driving capability, but always verify specifications to ensure compatibility with your specific application requirements.
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