UCC27211AQDRQ1

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UCC27211AQDRQ1

AUTOMOTIVE 4-A, 120-V HALF BRIDG

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規格

Part Status Active
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type MOSFET (N-Channel)
Voltage - Supply 8V ~ 17V
Current - Peak Output (Source, Sink) 3.7A, 4.5A
Input Type Non-Inverting
Rise / Fall Time (Typ) 7.2ns, 5.5ns
Operating Temperature -40°C ~ 140°C
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
High Side Voltage - Max (Bootstrap) 120 V
Grade Automotive
Qualification AEC-Q100

概述

Description

The UCC27211AQDRQ1 is a high-frequency, high-side/low-side gate driver from Texas Instruments, designed for driving N-channel MOSFETs in various configurations such as synchronous buck, half-bridge, full-bridge, and more. As part of the automotive-qualified Q1 series, it meets stringent AEC-Q100 standards, ensuring reliability in automotive applications.
Key features include a 4.4V to 17V operating voltage range, fast switching performance with a propagation delay of about 20ns, and the ability to drive large MOSFETs due to its 4A peak source and sink current capability. It incorporates built-in protection features like shoot-through protection, undervoltage lockout, and over-temperature protection, enhancing its robustness in demanding environments. The device is housed in a thermally efficient package, supporting high-power applications while maintaining thermal integrity.
Its high efficiency, coupled with reduced electromagnetic interference, makes the UCC27211AQDRQ1 suitable for applications in automotive powertrains, DC-DC converters, and motor drives, where quick switching and high reliability are crucial.

Features

The UCC27211AQDRQ1 is a high-frequency N-channel MOSFET driver designed for automotive applications. Key features include:
1. Automotive Qualified: It meets AEC-Q100 standards, ensuring reliability in automotive environments.
2. High-Speed Performance: Supports high-frequency switching applications with fast rise and fall times.
3. Wide Supply Range: Operates from 8V to 17V, enabling flexibility in various systems.
4. Bootstrap Diode: Integrated bootstrap diode simplifies the design and reduces component count.
5. UVLO Protection: Under-voltage lockout for both high-side and low-side drivers increases system protection.
6. Output Current Capability: Provides strong drive capability with high peak current ratings to efficiently charge and discharge MOSFET gates.
7. High Noise Immunity: Offers robust operation in electrically noisy environments.
8. Thermal Management: Designed with thermal shutdown protection to prevent overheating.
9. Compact Package: Available in an 8-pin SOIC package, optimizing space in compact designs.
These features make the UCC27211AQDRQ1 suitable for high-power, high-efficiency applications in automotive and industrial sectors.

Package

The UCC27211AQDRQ1 is packaged in a 10-pin WSON (Wettable Flank Small Outline No-lead) package. This type of package is compact and suitable for surface-mount technology, providing efficient thermal performance and electrical characteristics.

Pinout

The UCC27211AQDRQ1 is a high-frequency N-channel MOSFET driver IC designed for automotive applications. It comes in an 8-pin SOIC package. Here is a brief description of each pin and its function:
1. VDD (Pin 1): Supply voltage for the driver.
2. HB (Pin 2): High-side bootstrap voltage input.
3. HO (Pin 3): High-side gate drive output.
4. HS (Pin 4): High-side source connection, also serves as the return path for the high-side driver.
5. HI (Pin 5): High-side input signal.
6. LI (Pin 6): Low-side input signal.
7. LO (Pin 7): Low-side gate drive output.
8. VSS (Pin 8): Ground reference for the low-side driver.
The UCC27211AQDRQ1 is used in applications requiring high-speed switching of power MOSFETs, typically offering short propagation delays and compatibility with various PWM controllers. Its design ensures efficient driving of the gate capacitance of high-power MOSFETs, making it suitable for use in motor drives, DC-DC converters, and other power management systems.

Manufacturer

The UCC27211AQDRQ1 is manufactured by Texas Instruments. Texas Instruments, often abbreviated as TI, is a global semiconductor company that designs and produces a wide range of electronic components and integrated circuits. They are known for their innovation in the design and manufacturing of analog technologies, digital signal processing, and microcontroller semiconductors. TI serves various sectors, including automotive, industrial, personal electronics, communications equipment, and enterprise systems. The company is headquartered in Dallas, Texas, and is one of the largest semiconductor manufacturers in the world.

Application

The UCC27211AQDRQ1 is a high-frequency N-channel MOSFET driver used in various power management applications. It is commonly utilized in DC-DC converters, motor drives, synchronous rectifiers, and power supplies to enhance efficiency and performance. The driver is designed for automotive applications due to its AEC-Q100 qualification, making it suitable for use in automotive powertrain systems, electric and hybrid vehicle power systems, and other automotive electronic systems requiring robust and reliable high-side and low-side MOSFET driving capabilities.

Equivalent

The UCC27211AQDRQ1 is a high-frequency N-channel MOSFET driver. Equivalent products include the IR2110 and IR2113 from Infineon, as well as the MIC4422 from Microchip and the FAN7390 from ON Semiconductor. These alternatives vary in specifications like propagation delay and supply voltage, so ensure compatibility with your application requirements.

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