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UCC21750DWR
DGTL ISO 5.7KV 1CH GT DVR 16SOIC
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規格
| Part Status | Active |
| Base Product Number | UCC21750 |
| Technology | Capacitive Coupling |
| Number of Channels | 1 |
| Voltage - Isolation | 5700Vrms |
| Common Mode Transient Immunity (Min) | 150V/ns |
| Propagation Delay tpLH / tpHL (Max) | 130ns, 130ns |
| Pulse Width Distortion (Max) | 30ns |
| Rise / Fall Time (Typ) | 33ns, 27ns |
| Current - Output High, Low | 10A, 10A |
| Current - Peak Output | 10A |
| Voltage - Output Supply | 13V ~ 33V |
| Operating Temperature | -40°C ~ 125°C |
| Mounting Type | Surface Mount |
| Package | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOIC |
| Approval Agency | UL, VDE |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概述
Description
The UCC21750DWR is an isolated gate driver designed by Texas Instruments, primarily for driving power transistors like IGBTs and SiC MOSFETs in high-performance applications. It features high isolation voltage capabilities, making it suitable for applications such as solar inverters, motor drives, and industrial power supplies. The device offers advanced protection features including DESAT (desaturation) detection, active miller clamp, and fault reporting, enhancing the reliability and safety of the power semiconductor it controls.
The UCC21750DWR also includes important functionalities such as soft turn-off, which aids in reducing voltage overshoot and ringing during fault conditions, and a split-output design that allows for optimized turn-on and turn-off performance. The driver provides reinforced isolation up to 5.7 kV RMS, ensuring robust performance in demanding environments. It operates on a wide temperature range and supports a variety of input voltages, making it versatile for different power levels and operating conditions. Designed in a compact SOIC-16 (DWR) package, the UCC21750DWR is part of the UCC217xx family of isolated gate drivers, which are well-regarded for their efficiency and reliability in power electronics applications.
The UCC21750DWR also includes important functionalities such as soft turn-off, which aids in reducing voltage overshoot and ringing during fault conditions, and a split-output design that allows for optimized turn-on and turn-off performance. The driver provides reinforced isolation up to 5.7 kV RMS, ensuring robust performance in demanding environments. It operates on a wide temperature range and supports a variety of input voltages, making it versatile for different power levels and operating conditions. Designed in a compact SOIC-16 (DWR) package, the UCC21750DWR is part of the UCC217xx family of isolated gate drivers, which are well-regarded for their efficiency and reliability in power electronics applications.
Features
The UCC21750DWR is an advanced isolated gate driver designed for IGBTs, SiC, and MOSFETs, offering robust features for high-performance applications. Key features include:
1. Isolation: The device provides reinforced isolation, allowing for safe operation in high-voltage applications.
2. Fast Switching: It supports fast switching with short propagation delays, which is crucial for high-frequency applications.
3. Protection Features:
- DESAT Protection: Detects desaturation in power devices, providing fault protection.
- Soft Turn-Off: Gradual shutdown to prevent damage during faults.
- Overcurrent and Short Circuit Protection: Enhances device reliability.
4. Advanced Monitoring and Diagnostics: Features like active Miller clamp and UVLO (Under-Voltage Lockout) for both primary and secondary sides enhance safety and reliability.
5. Configurable: The driver offers flexibility with its adjustable parameters, allowing customization according to specific application needs.
6. High Drive Strength: Capable of driving large gate capacitances required by IGBTs and SiC MOSFETs.
These features make the UCC21750DWR suitable for applications in renewable energy systems, automotive, and industrial motor drives.
1. Isolation: The device provides reinforced isolation, allowing for safe operation in high-voltage applications.
2. Fast Switching: It supports fast switching with short propagation delays, which is crucial for high-frequency applications.
3. Protection Features:
- DESAT Protection: Detects desaturation in power devices, providing fault protection.
- Soft Turn-Off: Gradual shutdown to prevent damage during faults.
- Overcurrent and Short Circuit Protection: Enhances device reliability.
4. Advanced Monitoring and Diagnostics: Features like active Miller clamp and UVLO (Under-Voltage Lockout) for both primary and secondary sides enhance safety and reliability.
5. Configurable: The driver offers flexibility with its adjustable parameters, allowing customization according to specific application needs.
6. High Drive Strength: Capable of driving large gate capacitances required by IGBTs and SiC MOSFETs.
These features make the UCC21750DWR suitable for applications in renewable energy systems, automotive, and industrial motor drives.
Package
The UCC21750DWR is a gate driver IC from Texas Instruments, packaged in a 16-pin SOIC (Small Outline Integrated Circuit) with a wide body. The package is designed to provide isolation and is suitable for driving SiC and IGBT power transistors in high-power applications.
Pinout
The UCC21750DWR is a single-channel isolated gate driver by Texas Instruments, designed primarily for driving power transistors such as IGBTs or SiC MOSFETs. It is housed in a 16-pin SOIC (Small Outline Integrated Circuit) package. Here is a concise description of its pin functions:
1. VDD: Positive supply voltage for the driver output.
2. VEE: Negative supply voltage for the driver output.
3. OUTL: Low-side gate drive output.
4. OUTH: High-side gate drive output.
5. VCC: Positive supply voltage for the control logic.
6. GND: Ground reference for the control logic.
7. IN+: Non-inverting input for gate control.
8. IN-: Inverting input for gate control.
9. FAULT: Fault indicator pin.
10. RDY: Ready/busy status indicator.
11. DESAT: Desaturation detection input.
12. OC: Over-current detection input.
13. CLMPI: Input for clamping voltage level.
14. CLMPO: Output of clamped voltage.
15. EN: Enable pin for the driver.
16. NC: No connection.
Each pin serves a specific role in controlling the gate of the power transistor, ensuring safe and efficient operation in power conversion applications.
1. VDD: Positive supply voltage for the driver output.
2. VEE: Negative supply voltage for the driver output.
3. OUTL: Low-side gate drive output.
4. OUTH: High-side gate drive output.
5. VCC: Positive supply voltage for the control logic.
6. GND: Ground reference for the control logic.
7. IN+: Non-inverting input for gate control.
8. IN-: Inverting input for gate control.
9. FAULT: Fault indicator pin.
10. RDY: Ready/busy status indicator.
11. DESAT: Desaturation detection input.
12. OC: Over-current detection input.
13. CLMPI: Input for clamping voltage level.
14. CLMPO: Output of clamped voltage.
15. EN: Enable pin for the driver.
16. NC: No connection.
Each pin serves a specific role in controlling the gate of the power transistor, ensuring safe and efficient operation in power conversion applications.
Manufacturer
The manufacturer of the UCC21750DWR is Texas Instruments (TI). Texas Instruments is an American technology company headquartered in Dallas, Texas. It is one of the largest semiconductor companies in the world, primarily known for designing and manufacturing semiconductors and various integrated circuits, which are used in a broad range of electronic applications. TI operates in multiple markets, including industrial, automotive, personal electronics, communications equipment, and enterprise systems. The company is also recognized for its significant contributions to the development of educational technology, such as calculators and microcontrollers.
Application
The UCC21750DWR is a gate driver designed for IGBT and SiC MOSFET applications. Its primary application areas include electric vehicle traction inverters, solar inverters, motor drives, industrial power supplies, and other high-power, high-efficiency systems. Its features, such as fast switching speed, reinforced isolation, and advanced protection functions, make it suitable for driving power semiconductors in demanding environments requiring high reliability and efficiency.
Equivalent
The UCC21750DWR is a gate driver from Texas Instruments designed for IGBTs and SiC MOSFETs. Equivalent products from other manufacturers include the 1EDI60N12AF from Infineon Technologies, the ADuM4135 from Analog Devices, and the ISO5852S from Texas Instruments. These alternatives offer similar functionalities such as isolation, protection features, and high-speed operation, though specifications may vary slightly. Always verify specific application requirements when selecting a substitute.
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