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TPS28225DRBR
IC GATE DRVR HALF-BRIDGE 8SON
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Synchronous |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 4.5V ~ 8.8V |
| Current-PeakOutput(SourceSink) | 2A, 2A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 33 V |
| Rise/FallTime(Typ) | 10ns, 10ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-VDFN Exposed Pad |
概述
Description
The TPS28225DRBR is a high-speed, dual low-side MOSFET driver designed by Texas Instruments. It's utilized primarily in power management applications to efficiently drive power MOSFETs, which are crucial components in DC-DC converters, motor controllers, and other switching power applications. The device is housed in a small 3x3 mm SON-10 package, making it suitable for compact designs.
Key features include high peak current drive capability, typically 4A, allowing for rapid switching of MOSFETs to minimize switching losses and improve overall system efficiency. It also provides both inverting and non-inverting inputs to support flexible design configurations. The TPS28225DRBR operates over a wide input voltage range, enhancing its versatility in various circuits. The device is engineered with built-in shoot-through protection, preventing simultaneous conduction of both the high-side and low-side MOSFETs, which can damage the circuit.
Additionally, the driver offers a fast propagation delay, typically around 14 ns, which is essential for high-frequency switching applications. With its robust features and compact package, the TPS28225DRBR is a reliable choice for designers seeking efficient and compact driver solutions.
Key features include high peak current drive capability, typically 4A, allowing for rapid switching of MOSFETs to minimize switching losses and improve overall system efficiency. It also provides both inverting and non-inverting inputs to support flexible design configurations. The TPS28225DRBR operates over a wide input voltage range, enhancing its versatility in various circuits. The device is engineered with built-in shoot-through protection, preventing simultaneous conduction of both the high-side and low-side MOSFETs, which can damage the circuit.
Additionally, the driver offers a fast propagation delay, typically around 14 ns, which is essential for high-frequency switching applications. With its robust features and compact package, the TPS28225DRBR is a reliable choice for designers seeking efficient and compact driver solutions.
Features
The TPS28225DRBR is a high-speed gate driver from Texas Instruments, designed for driving N-channel MOSFETs in synchronous buck converters. Key features include:
1. High-Speed Performance: It offers fast switching speeds with short rise and fall times, enhancing efficiency in high-frequency applications.
2. Input Logic Compatibility: It supports a wide range of input logic levels, compatible with standard 3.3V and 5V logic signals.
3. Adaptive Dead-Time Control: This feature prevents shoot-through by ensuring minimal dead time between the switching of the high-side and low-side MOSFETs.
4. Bootstrap Diode: An integrated bootstrap diode simplifies the design and reduces component count for driving the high-side MOSFET.
5. Undervoltage Lockout (UVLO): The driver includes UVLO protection to ensure that it operates only when the supply voltage is within a safe range.
6. Wide Supply Voltage Range: It supports a wide supply voltage range, providing flexibility for various applications.
7. Thermal Performance: The device is available in a thermally enhanced package, suitable for high-power applications.
This gate driver is ideal for power supply applications requiring efficient and reliable MOSFET control.
1. High-Speed Performance: It offers fast switching speeds with short rise and fall times, enhancing efficiency in high-frequency applications.
2. Input Logic Compatibility: It supports a wide range of input logic levels, compatible with standard 3.3V and 5V logic signals.
3. Adaptive Dead-Time Control: This feature prevents shoot-through by ensuring minimal dead time between the switching of the high-side and low-side MOSFETs.
4. Bootstrap Diode: An integrated bootstrap diode simplifies the design and reduces component count for driving the high-side MOSFET.
5. Undervoltage Lockout (UVLO): The driver includes UVLO protection to ensure that it operates only when the supply voltage is within a safe range.
6. Wide Supply Voltage Range: It supports a wide supply voltage range, providing flexibility for various applications.
7. Thermal Performance: The device is available in a thermally enhanced package, suitable for high-power applications.
This gate driver is ideal for power supply applications requiring efficient and reliable MOSFET control.
Package
The TPS28225DRBR is packaged in a SON (Small Outline No-lead) package, specifically a 3x3 mm SON-10. This type of package is compact and suitable for applications requiring efficient thermal performance and space-saving design.
Pinout
The TPS28225DRBR is a high-speed, dual low-side MOSFET driver produced by Texas Instruments. It is packaged in an 8-pin SON (Small Outline No-lead) package. Here is a brief overview of its pin count and function:
1. Pin 1 (IN1): Input for the first driver channel.
2. Pin 2 (IN2): Input for the second driver channel.
3. Pin 3 (VDD): Supply voltage pin.
4. Pin 4 (GND): Common ground for the device.
5. Pin 5 (OUT2): Output for the second driver channel.
6. Pin 6 (PGND): Power ground, typically connected to low-side MOSFET source.
7. Pin 7 (OUT1): Output for the first driver channel.
8. Pin 8 (DIS): Enable/disable pin for the outputs.
The TPS28225DRBR is used to drive MOSFETs in applications requiring fast switching and efficient power management, such as DC-DC converters. It provides strong drive capability, fast rise and fall times, and can operate with a supply voltage of up to 8 V.
1. Pin 1 (IN1): Input for the first driver channel.
2. Pin 2 (IN2): Input for the second driver channel.
3. Pin 3 (VDD): Supply voltage pin.
4. Pin 4 (GND): Common ground for the device.
5. Pin 5 (OUT2): Output for the second driver channel.
6. Pin 6 (PGND): Power ground, typically connected to low-side MOSFET source.
7. Pin 7 (OUT1): Output for the first driver channel.
8. Pin 8 (DIS): Enable/disable pin for the outputs.
The TPS28225DRBR is used to drive MOSFETs in applications requiring fast switching and efficient power management, such as DC-DC converters. It provides strong drive capability, fast rise and fall times, and can operate with a supply voltage of up to 8 V.
Manufacturer
The TPS28225DRBR is manufactured by Texas Instruments. Texas Instruments is a global semiconductor company that designs and produces a wide range of electronic components. Their products are used in various applications, including industrial, automotive, personal electronics, and communications. Texas Instruments is known for its innovation in analog and embedded processing, which are core areas of its business.
Application
The TPS28225DRBR is a high-speed MOSFET driver typically used in applications such as synchronous rectification in DC-DC converters, motor drives, and power management systems. It is designed for high-performance power switching, enabling efficient power conversion in computing, telecommunications, and industrial applications. Its ability to drive large MOSFETs efficiently makes it suitable for high-frequency power supplies and other circuits requiring rapid switching capabilities.
Equivalent
The TPS28225DRBR is a dual high-speed MOSFET driver from Texas Instruments. Equivalent products include the MIC4427 from Microchip, the FAN3224 from ON Semiconductor, and the MAX4427 from Maxim Integrated, which are all dual MOSFET drivers with similar speed and functional characteristics. Always verify electrical specifications and pin compatibility when considering replacements.
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