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TPS2812DR
IC GATE DRVR LOW-SIDE 8SOIC
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規格
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Driven Configuration | Low-Side |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | MOSFET (N-Channel) |
| Voltage - Supply | 4V ~ 14V |
| Logic Voltage - VIL, VIH | 1V, 4V |
| Current - Peak Output (Source, Sink) | 2A, 2A |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 14ns, 15ns |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | TPS2812 |
概述
Description
TPS2812DR is a high-speed, dual-channel gate driver designed for driving MOSFETs and IGBTs in various power applications such as motor drives, power supplies, and inverters. It features a high-voltage capability, allowing it to operate with supply voltages up to 18V, while providing an output drive current of up to 2A.
The device includes built-in features like under-voltage lockout (UVLO), which protects the gate driver from low supply voltage conditions, and a fast propagation delay for rapid switching, enhancing overall system efficiency.
The TPS2812DR is designed to be compatible with both high-side and low-side configurations, making it versatile for various circuit designs. It also supports complementary drive signals, helping to reduce switching losses and improve thermal performance.
Housed in a 14-pin TSSOP package, it offers a compact solution for power electronics applications while ensuring high reliability and performance. Overall, the TPS2812DR is suitable for applications that require efficient control of power semiconductor devices in demanding environments.
The device includes built-in features like under-voltage lockout (UVLO), which protects the gate driver from low supply voltage conditions, and a fast propagation delay for rapid switching, enhancing overall system efficiency.
The TPS2812DR is designed to be compatible with both high-side and low-side configurations, making it versatile for various circuit designs. It also supports complementary drive signals, helping to reduce switching losses and improve thermal performance.
Housed in a 14-pin TSSOP package, it offers a compact solution for power electronics applications while ensuring high reliability and performance. Overall, the TPS2812DR is suitable for applications that require efficient control of power semiconductor devices in demanding environments.
Features
The TPS2812DR is a high-speed dual gate driver designed for driving N-channel MOSFETs in half-bridge and full-bridge configurations. Key features include:
1. High-Speed Operation: Capable of driving output currents up to 2.5 A, enabling fast switching to reduce power losses.
2. Voltage Levels: Operates with a supply voltage range of 10 V to 15 V, suitable for various applications.
3. Input Compatibility: Accepts TTL/CMOS compatible inputs, providing flexibility in interfacing with different logic levels.
4. Low Propagation Delay: Offers low propagation delay (typically around 30 ns), enhancing overall system performance.
5. Desaturation Protection: Integrated features for desaturation detection ensure safe operation of the power MOSFETs.
6. Under Voltage Lockout (UVLO): Provides protection against low supply voltage conditions.
7. Thermal Protection: Integrated thermal shutdown feature to prevent overheating.
This driver is commonly used in motor control, power supply, and other high-frequency switching applications.
1. High-Speed Operation: Capable of driving output currents up to 2.5 A, enabling fast switching to reduce power losses.
2. Voltage Levels: Operates with a supply voltage range of 10 V to 15 V, suitable for various applications.
3. Input Compatibility: Accepts TTL/CMOS compatible inputs, providing flexibility in interfacing with different logic levels.
4. Low Propagation Delay: Offers low propagation delay (typically around 30 ns), enhancing overall system performance.
5. Desaturation Protection: Integrated features for desaturation detection ensure safe operation of the power MOSFETs.
6. Under Voltage Lockout (UVLO): Provides protection against low supply voltage conditions.
7. Thermal Protection: Integrated thermal shutdown feature to prevent overheating.
This driver is commonly used in motor control, power supply, and other high-frequency switching applications.
Package
The TPS2812DR is available in a 5-pin SOT-23 package type. This compact surface-mount package is designed for space-constrained applications and provides efficient performance for driving MOSFETs in various electronic circuits.
Pinout
The TPS2812DR is a high-speed, dual-channel gate driver from Texas Instruments, designed for driving N-channel MOSFETs and IGBTs. It has a total of 8 pins.
Pin Count and Functions:
1. VDD (Pin 1): Supply voltage for the driver (typically +5V to +12V).
2. COM (Pin 2): Common ground reference for the driver.
3. IN (Pin 3): Input signal for the corresponding channel.
4. OUT (Pin 4): Output driver signal to the gate of the MOSFET/IGBT for the first channel.
5. VDD (Pin 5): Supply voltage for the second channel (internally connected).
6. COM (Pin 6): Common ground reference for the second channel (internally connected).
7. IN (Pin 7): Input signal for the second channel.
8. OUT (Pin 8): Output driver signal to the gate of the MOSFET/IGBT for the second channel.
The TPS2812DR enhances switching speeds, minimizing gate charge losses, and features under-voltage lockout for protection.
Pin Count and Functions:
1. VDD (Pin 1): Supply voltage for the driver (typically +5V to +12V).
2. COM (Pin 2): Common ground reference for the driver.
3. IN (Pin 3): Input signal for the corresponding channel.
4. OUT (Pin 4): Output driver signal to the gate of the MOSFET/IGBT for the first channel.
5. VDD (Pin 5): Supply voltage for the second channel (internally connected).
6. COM (Pin 6): Common ground reference for the second channel (internally connected).
7. IN (Pin 7): Input signal for the second channel.
8. OUT (Pin 8): Output driver signal to the gate of the MOSFET/IGBT for the second channel.
The TPS2812DR enhances switching speeds, minimizing gate charge losses, and features under-voltage lockout for protection.
Manufacturer
The TPS2812DR is manufactured by Texas Instruments (TI), a leading American technology company. Founded in 1930, Texas Instruments designs and produces a wide range of semiconductor products, including analog and embedded processing devices. The company is well-known for its innovations in the fields of analog engineering, digital signal processing, and microcontrollers, making significant contributions to various industries such as telecommunications, automotive, industrial applications, and consumer electronics. Texas Instruments emphasizes research and development to advance its technology, and it is recognized for its commitment to quality and reliability in its product offerings.
Application
The TPS2812DR is a high-speed driver used primarily in power electronics applications. Key areas include driving N-channel MOSFETs and IGBTs in motor drives, power converters, and switch-mode power supplies. It's ideal for high-frequency switching applications, such as inverters and DC-DC converters, providing fast rise and fall times to enhance efficiency and performance. Additionally, it is utilized in applications requiring gate drive isolation and protection.
Equivalent
Equivalent products to the TPS2812DR include the ISL2812, MIC4426, and TC4420. These alternatives offer similar specifications for driving MOSFETs in high-speed applications. Always verify parameters like voltage, current ratings, and package type to ensure compatibility for specific applications.
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