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TP65H050WS
GANFET N-CH 650V 34A TO247-3
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規格
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| Power Dissipation (Max) | 119W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | TP65H050 |
概述
Description
The TP65H050WS is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance (RDS(on)) of 50 mΩ, which enables efficient conduction with minimal power loss. This device is typically utilized in applications such as power supplies, DC-DC converters, and motor control due to its ability to handle high voltages and currents.
With a maximum drain-source voltage (VDS) of 65V and a continuous drain current (ID) of up to 50A, the TP65H050WS is suitable for demanding environments. Its fast switching speeds improve efficiency in switching applications, while its robust thermal performance ensures reliability under high load conditions.
The TO-220 package allows for effective heat dissipation, making it easier to manage thermal performance in designs. Overall, the TP65H050WS is an excellent choice for engineers looking to enhance power efficiency and performance in various electronic applications.
With a maximum drain-source voltage (VDS) of 65V and a continuous drain current (ID) of up to 50A, the TP65H050WS is suitable for demanding environments. Its fast switching speeds improve efficiency in switching applications, while its robust thermal performance ensures reliability under high load conditions.
The TO-220 package allows for effective heat dissipation, making it easier to manage thermal performance in designs. Overall, the TP65H050WS is an excellent choice for engineers looking to enhance power efficiency and performance in various electronic applications.
Features
The TP65H050WS is a high-voltage N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 650V, making it suitable for high-voltage applications.
2. Current Capacity: The device supports a continuous drain current (I_D) of 65A, allowing for substantial load handling.
3. On-Resistance: It has a low on-resistance (R_DS(on)) specification, typically around 0.050 Ohms, which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is designed to ensure reliable switching characteristics.
5. Fast Switching Speed: The MOSFET exhibits quick turn-on and turn-off characteristics, which are beneficial for high-frequency applications.
6. Robust Packaging: It is available in a TO-220 package, facilitating heat dissipation and easy integration into various circuits.
These features make the TP65H050WS an excellent choice for applications in power supplies, motor controls, and energy conversion systems.
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 650V, making it suitable for high-voltage applications.
2. Current Capacity: The device supports a continuous drain current (I_D) of 65A, allowing for substantial load handling.
3. On-Resistance: It has a low on-resistance (R_DS(on)) specification, typically around 0.050 Ohms, which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is designed to ensure reliable switching characteristics.
5. Fast Switching Speed: The MOSFET exhibits quick turn-on and turn-off characteristics, which are beneficial for high-frequency applications.
6. Robust Packaging: It is available in a TO-220 package, facilitating heat dissipation and easy integration into various circuits.
These features make the TP65H050WS an excellent choice for applications in power supplies, motor controls, and energy conversion systems.
Package
The TP65H050WS is typically packaged in a TO-247 format, which is a robust, three-lead package designed for high-power applications. This package type allows for efficient heat dissipation and is suitable for use in various electronic circuits.
Pinout
The TP65H050WS is a N-channel MOSFET with a pin count of 5. Its primary functions include acting as a switch to control power in various electronic applications, including power management and motor control.
The pinout typically comprises:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
4. Body Diode (internal) - Allows current to flow in the reverse direction, useful for inductive loads.
5. Thermal Pad (if available) - For heat dissipation, improving reliability in high-power applications.
With a maximum drain-source voltage (V_DS) of 65V and a continuous drain current (I_D) of up to 50A, it is suitable for high-performance applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
The pinout typically comprises:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
4. Body Diode (internal) - Allows current to flow in the reverse direction, useful for inductive loads.
5. Thermal Pad (if available) - For heat dissipation, improving reliability in high-power applications.
With a maximum drain-source voltage (V_DS) of 65V and a continuous drain current (I_D) of up to 50A, it is suitable for high-performance applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
The TP65H050WS is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its wide range of products, including microcontrollers, sensors, analog devices, and power management solutions. The company serves various markets, including automotive, industrial, consumer electronics, and communication. STMicroelectronics is recognized for its innovation in developing technologies that enable energy efficiency and connectivity, contributing to the advancement of the Internet of Things (IoT) and smart technologies. Headquartered in Geneva, Switzerland, STMicroelectronics operates globally, providing solutions that enhance the performance and functionality of electronic devices.
Application
TP65H050WS is a 650V, 50A N-channel MOSFET primarily used in power electronics applications. Its key application areas include power supplies, motor drives, and DC-DC converters. It is also suitable for industrial automation, renewable energy systems like solar inverters, and electric vehicles due to its high efficiency and thermal performance, enabling effective switching and energy management in various circuits.
Equivalent
The TP65H050WS is a power MOSFET, specifically a N-channel MOSFET with a voltage rating of 50V and a current rating of 65A. Equivalent products include the IRF3205, STP65NF06, and FDD865N50. Always verify specifications such as V_DS, I_D, R_DS(on), and package type to ensure compatibility in your application.
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