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THGBMJG6C1LBAB7
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- 資料表 THGBMJG6C1LBAB7 DataSheet
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規格
| EU RoHS | Compliant |
| ECCN (US) | 3A991.b.1.a |
| Part Status | Unconfirmed |
| HTS | 8542.32.00.71 |
| Automotive | Yes |
| PPAP | Unknown |
| Cell Type | NAND |
| Chip Density (bit) | 64G |
| Programmability | Yes |
| Timing Type | Synchronous |
| Interface Type | Serial e-MMC |
| Minimum Operating Supply Voltage (V) | 2.7 |
| Typical Operating Supply Voltage (V) | 3.3 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 105 |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 11.5 |
| Package Length | 13 |
| PCB changed | 153 |
| Standard Package Name | BGA |
| Supplier Package | FBGA |
| Pin Count | 153 |
概述
Description
THGBMJG6C1LBAB7 is a NAND flash memory chip produced by Toshiba (now part of Kioxia). It is designed for use in various applications, including consumer electronics, mobile devices, and embedded systems. This chip features high-speed data transfer and reliability, crucial for applications requiring efficient storage solutions.
NAND flash memory, like THGBMJG6C1LBAB7, operates on a non-volatile basis, meaning it retains data even when power is turned off. It typically includes multiple memory layers to enhance storage capacity and performance.
The specific part number indicates its capacity, interface, and other technical specifications, making it suitable for designers and engineers looking to implement advanced storage in their products. The chip is part of a broader trend towards increasing storage density and speed in electronic devices, addressing the growing demand for data-intensive applications.
For detailed technical specifications, it’s recommended to refer to the manufacturer's datasheet.
NAND flash memory, like THGBMJG6C1LBAB7, operates on a non-volatile basis, meaning it retains data even when power is turned off. It typically includes multiple memory layers to enhance storage capacity and performance.
The specific part number indicates its capacity, interface, and other technical specifications, making it suitable for designers and engineers looking to implement advanced storage in their products. The chip is part of a broader trend towards increasing storage density and speed in electronic devices, addressing the growing demand for data-intensive applications.
For detailed technical specifications, it’s recommended to refer to the manufacturer's datasheet.
Features
The THGBMJG6C1LBAB7 is a NAND flash memory chip, specifically a 16GB eMMC (embedded MultiMediaCard) device. Key features include:
1. Capacity: 16GB of storage space.
2. Interface: Uses a high-speed eMMC 5.1 interface, providing enhanced data transfer rates and reliability.
3. Performance: Offers improved read and write speeds, suitable for mobile devices and consumer electronics.
4. Form Factor: Compact size, allowing for integration into smartphones, tablets, and other portable devices.
5. Durability: Designed for robust performance with wear leveling and error correction features to extend lifespan.
6. Power Efficiency: Consumes low power, which is crucial for battery-operated devices.
Overall, the THGBMJG6C1LBAB7 is ideal for applications requiring efficient, high-capacity storage solutions in compact form factors.
1. Capacity: 16GB of storage space.
2. Interface: Uses a high-speed eMMC 5.1 interface, providing enhanced data transfer rates and reliability.
3. Performance: Offers improved read and write speeds, suitable for mobile devices and consumer electronics.
4. Form Factor: Compact size, allowing for integration into smartphones, tablets, and other portable devices.
5. Durability: Designed for robust performance with wear leveling and error correction features to extend lifespan.
6. Power Efficiency: Consumes low power, which is crucial for battery-operated devices.
Overall, the THGBMJG6C1LBAB7 is ideal for applications requiring efficient, high-capacity storage solutions in compact form factors.
Package
The THGBMJG6C1LBAB7 is a NAND flash memory chip packaged in a BGA (Ball Grid Array) format. This type of packaging allows for efficient thermal management and space-saving on printed circuit boards.
Pinout
The THGBMJG6C1LBAB7 is a NAND flash memory device manufactured by Toshiba. It typically comes in a BGA (Ball Grid Array) package with a pin count of 48. The primary function of this device is to provide non-volatile data storage, often used in smartphones, tablets, and other consumer electronics.
It utilizes 3D NAND technology, allowing for higher storage density and improved performance compared to traditional planar NAND. The THGBMJG6C1LBAB7 supports various data transfer protocols, enabling efficient read and write operations. Its features include fast access times, endurance, and reliability, making it suitable for a wide range of applications requiring persistent storage.
It utilizes 3D NAND technology, allowing for higher storage density and improved performance compared to traditional planar NAND. The THGBMJG6C1LBAB7 supports various data transfer protocols, enabling efficient read and write operations. Its features include fast access times, endurance, and reliability, making it suitable for a wide range of applications requiring persistent storage.
Manufacturer
The manufacturer of the THGBMJG6C1LBAB7 is Toshiba Memory Corporation, which is now known as Kioxia Corporation after its rebranding in 2019. Kioxia is a leading company in the flash memory industry, specializing in NAND flash memory and storage solutions. The company focuses on developing advanced memory technologies and provides products for various applications, including consumer electronics, enterprise storage, and data centers. Kioxia plays a significant role in the global memory market, contributing to innovations in memory storage products and solutions.
Application
THGBMJG6C1LBAB7 is a NAND flash memory chip commonly used in consumer electronics. Its application areas include smartphones, tablets, digital cameras, and solid-state drives (SSDs). Additionally, it is utilized in automotive systems, IoT devices, and embedded systems for data storage and fast read/write operations.
Equivalent
The THGBMJG6C1LBAB7 is a 64GB eMMC (embedded MultiMediaCard) NAND flash memory chip. Equivalent products include:
1. Toshiba TC58NVG3S0HBAI4
2. Samsung KLM64G6QEB-B041
3. Micron MTFC64GAKCE
4. Kingston eMMC 64GB (various part numbers)
Always verify compatibility and specifications based on your specific application needs.
1. Toshiba TC58NVG3S0HBAI4
2. Samsung KLM64G6QEB-B041
3. Micron MTFC64GAKCE
4. Kingston eMMC 64GB (various part numbers)
Always verify compatibility and specifications based on your specific application needs.
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