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TH58NVG2S3HTAI0

Name: TH58NVG2S3HTAI0
Rating: 4.7 (12 reviews)

IC FLASH 4GBIT PARALLEL 48TSOP I

製造商
製造商。部分 #TH58NVG2S3HTAI0
包 48-TFSOP (0.724, 18.40mm Width)
資料表 TH58NVG2S3HTAI0 DataSheet
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規格

Supplier	Kioxia America, Inc.
Package	Tray
ProductStatus	Active
MemoryType	Non-Volatile
MemoryFormat	FLASH
Technology	FLASH - NAND (SLC)
MemorySize	4Gb (512M x 8)
MemoryInterface	Parallel
WriteCycleTime-WordPage	25ns
AccessTime	25 ns
Voltage-Supply	2.7V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	48-TFSOP (0.724, 18.40mm Width)

概述

Description

TH58NVG2S3HTAI0 is a model number for a NAND flash memory IC (nonvolatile storage) from Toshiba/Tioxia/Kioxia’s TH58 family. It’s used as a storage component in devices like embedded systems, SSDs, and memory cards.
Key points:
- It’s a NAND flash device that stores data in pages/blocks with ECC and wear leveling.
- The exact density, page size, number of planes, interface version, and operating voltages depend on the specific revision and datasheet.
- Typical uses include replacing or augmenting internal storage in consumer/industrial electronics.
To get precise specs (density in Gb, page/block size, interface, timing, endurance, voltage, and package), consult the official TH58NVG2S3HTAI0 datasheet from Toshiba/Kioxia. If you share the datasheet or allow me to fetch details, I can summarize the exact specifications.

Package

FBGA (fine-pitch Ball Grid Array) package.

Manufacturer

Manufacturer: Kioxia (formerly Toshiba Memory/Toshiba).
Kioxia is a Japanese multinational electronics and semiconductor company specializing in flash memory and solid-state storage products.

Application

TH58NVG2S3HTAI0 is a 3D NAND flash memory device. Typical applications:
- Internal storage for consumer electronics (smartphones, tablets, cameras)
- Embedded storage in IoT, industrial, and automotive electronics
- Solid-state drives (SATA/NVMe) and external storage
- Firmware/data logging and boot/storage for embedded systems
- Edge computing and other non-volatile memory needs requiring high density and endurance

Equivalent

TH58NVG2S3HTAI0 is a Toshiba (now Kioxia) NAND flash device. Cross equivalents depend on density, bus width, voltage and ONFI version. Please provide: memory density (Gb), I/O width (x8/x16), supply voltage, ONFI/Toggle version, and package. With those, I can give direct equivalents from Kioxia, Micron, SK hynix, etc., and a cross-reference list. Without density/package details, I can’t confidently list correct equivalents.