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TH58BVG2S3HTAI0

Name: TH58BVG2S3HTAI0
Rating: 4.7 (12 reviews)

IC FLASH 4GBIT PARALLEL 48TSOP I

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包 TSOP-48
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規格

Package	Tray
Series	Benand™
ProductStatus	Active
MemoryType	Non-Volatile
MemoryFormat	FLASH
Technology	FLASH - NAND (SLC)
MemorySize	4Gb (512M x 8)
MemoryInterface	Parallel
WriteCycleTime-WordPage	25ns
AccessTime	25 ns
Voltage-Supply	2.7V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	48-TFSOP (0.724, 18.40mm Width)

概述

Description

TH58BVG2S3HTAI0 is a NAND flash memory chip produced by Toshiba, designed for applications requiring reliable and high-density storage solutions. This component typically features a capacity of 8GB, utilizing a serial interface (SPI) for efficient data transfer. Its architecture supports multiple programming and erase cycles, making it suitable for consumer electronics, automotive, and industrial applications. The chip is known for its low power consumption and high performance, contributing to enhanced device longevity and responsiveness. Additionally, it may incorporate advanced error correction mechanisms to ensure data integrity. Overall, TH58BVG2S3HTAI0 is a versatile solution for systems requiring compact and efficient non-volatile memory.

Features

The TH58BVG2S3HTAI0 is a NAND Flash memory chip produced by Toshiba, featuring the following key attributes:
1. Type: NAND Flash memory, suitable for applications requiring non-volatile storage.
2. Capacity: Typically available in varying densities, often in the range of gigabits.
3. Interface: Utilizes a toggle mode interface for high-speed data transfer.
4. Performance: Supports fast read and write speeds, enhancing overall system performance, particularly in mobile and embedded applications.
5. Endurance: Designed for high endurance, making it suitable for write-intensive applications.
6. Power Efficiency: Operates at low power consumption levels, which is critical for battery-operated devices.
7. Application: Ideal for use in smartphones, tablets, and various consumer electronics, as well as industrial applications.
This combination of features makes the TH58BVG2S3HTAI0 a reliable choice for modern digital storage needs.

Package

The TH58BVG2S3HTAI0 is a NAND flash memory chip typically packaged in a BGA (Ball Grid Array) format. This type of packaging provides a compact design and effective thermal performance, commonly used in mobile devices and storage applications.

Manufacturer

The TH58BVG2S3HTAI0 is manufactured by Toshiba Memory Corporation, which is a subsidiary of Toshiba Corporation. Toshiba Memory specializes in the production of NAND flash memory and storage solutions. The company is recognized as one of the leading manufacturers in the semiconductor industry, focusing on innovative memory technologies for a variety of applications, including consumer electronics, data centers, and industrial systems. Toshiba Memory Corporation is known for its commitment to research and development, continuously advancing its product offerings to meet the growing demand for high-performance memory solutions.

Application

The TH58BVG2S3HTAI0 is a NAND flash memory chip commonly used in consumer electronics, automotive applications, and industrial devices. Its applications include smartphones, tablets, embedded systems, digital cameras, and data storage solutions, where high-speed data access and reliability are essential. Additionally, it can be utilized in firmware storage, IoT devices, and wearables.

Equivalent

The TH58BVG2S3HTAI0 chip is a Toshiba NAND Flash memory device. Equivalent products may include other Toshiba NAND Flash chips such as TH58BVG2S3HTAI1, as well as similar offerings from competitors like Micron (e.g., MT29Fxx), Samsung (e.g., K9GAG08U0M), and SK Hynix (e.g., H26M42003F2). Always verify specifications for compatibility.