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TC58NVG0S3EBAI4
NAND Flash 3.3V 1Gb 43nm SLC NAND (EEPROM)
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| Packaging | Tray |
| Standard Pack Qty | 210 |
概述
Description
The TC58NVG0S3EBAI4 is a type of NAND flash memory chip produced by Toshiba (now Kioxia). It belongs to the 3D NAND family, which offers higher storage density and improved performance compared to traditional 2D NAND. This specific chip is typically used in consumer electronics, mobile devices, and enterprise applications due to its reliability and efficiency.
Key features include high data transfer speeds, low power consumption, and enhanced endurance, making it suitable for a range of applications, from smartphones to solid-state drives (SSDs). The TC58NVG0S3EBAI4 utilizes a multi-level cell (MLC) architecture, allowing it to store multiple bits of data per memory cell, thereby increasing storage capacity.
Overall, the TC58NVG0S3EBAI4 provides a robust solution for modern data storage needs, balancing performance, capacity, and energy efficiency.
Key features include high data transfer speeds, low power consumption, and enhanced endurance, making it suitable for a range of applications, from smartphones to solid-state drives (SSDs). The TC58NVG0S3EBAI4 utilizes a multi-level cell (MLC) architecture, allowing it to store multiple bits of data per memory cell, thereby increasing storage capacity.
Overall, the TC58NVG0S3EBAI4 provides a robust solution for modern data storage needs, balancing performance, capacity, and energy efficiency.
Features
The TC58NVG0S3EBAI4 is a NAND flash memory chip developed by Toshiba, featuring the following key characteristics:
1. Memory Type: NAND Flash (3D TLC - Triple-Level Cell).
2. Capacity: 64 Gb (Gigabits) or 8 GB (Gigabytes).
3. Interface: ONFI 2.3 compliant, supporting high-speed data transfer.
4. Performance: Offers fast read/write speeds suitable for mobile and embedded applications.
5. Endurance: Designed for high endurance and reliability, suitable for consumer electronics, automotive, and industrial applications.
6. Form Factor: Available in a compact BGA (Ball Grid Array) package, making it ideal for space-constrained designs.
7. Operating Voltage: Typically operates at a voltage range of 2.7V to 3.6V, ensuring compatibility with various systems.
This chip is commonly used in smartphones, tablets, and other devices requiring efficient storage solutions.
1. Memory Type: NAND Flash (3D TLC - Triple-Level Cell).
2. Capacity: 64 Gb (Gigabits) or 8 GB (Gigabytes).
3. Interface: ONFI 2.3 compliant, supporting high-speed data transfer.
4. Performance: Offers fast read/write speeds suitable for mobile and embedded applications.
5. Endurance: Designed for high endurance and reliability, suitable for consumer electronics, automotive, and industrial applications.
6. Form Factor: Available in a compact BGA (Ball Grid Array) package, making it ideal for space-constrained designs.
7. Operating Voltage: Typically operates at a voltage range of 2.7V to 3.6V, ensuring compatibility with various systems.
This chip is commonly used in smartphones, tablets, and other devices requiring efficient storage solutions.
Package
The TC58NVG0S3EBAI4 is a NAND flash memory chip typically packaged in a 48-lead TSOP (Thin Small Outline Package) format. This package type is designed for surface mounting on circuit boards, offering a compact solution for various electronic applications.
Pinout
The TC58NVG0S3EBAI4 is a NAND flash memory chip manufactured by Toshiba. It has a pin count of 48 pins. This device is designed for use in various applications, including mobile devices and storage solutions, offering high-density storage and fast data transfer rates.
The functions of the pins include power supply inputs, ground connections, data input/output lines, command and address inputs, and control signals for operations such as read, write, and erase. The device typically supports a standard interface protocol, enabling it to be integrated into various systems effectively. For specific pin assignments and detailed functionality, referring to the manufacturer's datasheet is recommended.
The functions of the pins include power supply inputs, ground connections, data input/output lines, command and address inputs, and control signals for operations such as read, write, and erase. The device typically supports a standard interface protocol, enabling it to be integrated into various systems effectively. For specific pin assignments and detailed functionality, referring to the manufacturer's datasheet is recommended.
Manufacturer
The TC58NVG0S3EBAI4 is manufactured by Toshiba Memory Corporation, now known as Kioxia Corporation. Kioxia is a leading global provider of flash memory storage solutions and is recognized for its innovation in NAND flash technology. The company was originally part of Toshiba's semiconductor division but became an independent entity in 2017. Kioxia focuses on designing and manufacturing a range of memory products, including SSDs and NAND flash chips, serving various markets such as consumer electronics, data centers, and automotive applications. Kioxia is also known for its advancements in 3D NAND technology, which enhances storage density and performance.
Application
The TC58NVG0S3EBAI4 is a NAND flash memory chip primarily used in consumer electronics, including smartphones, tablets, and SSDs. Its application areas include data storage for mobile applications, multimedia devices, and embedded systems, providing high-speed data access and reliable performance for operating systems and app installations. Additionally, it is suitable for automotive and industrial applications requiring durable and efficient storage solutions.
Equivalent
The TC58NVG0S3EBAI4 is a NAND flash memory chip. Equivalent products include:
1. Samsung K9GAG08U0M
2. Micron MT29F8G08ABAEAWP
3. Hynix HY27UF081G2M
4. SanDisk SDTNCG6A
Ensure compatibility by checking specifications like capacity, interface, and voltage before substituting.
1. Samsung K9GAG08U0M
2. Micron MT29F8G08ABAEAWP
3. Hynix HY27UF081G2M
4. SanDisk SDTNCG6A
Ensure compatibility by checking specifications like capacity, interface, and voltage before substituting.
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