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TC58CVG0S3HRAIJ
IC FLASH 1GBIT SPI 133MHZ 8WSON
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規格
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND (SLC) |
| MemorySize | 1Gb (128M x 8) |
| MemoryInterface | SPI |
| ClockFrequency | 133 MHz |
| AccessTime | 180 µs |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C |
| MountingType | Surface Mount |
| Package/Case | 8-WDFN Exposed Pad |
概述
Description
The TC58CVG0S3HRAIJ is a NAND flash memory chip produced by Toshiba. It is part of the company's 3D NAND technology lineup, specifically designed for high-density storage applications. This chip offers enhanced performance and reliability, making it suitable for a wide range of devices including smartphones, tablets, SSDs, and other consumer electronics.
Key features include a high storage capacity, improved read/write speeds, and lower power consumption compared to traditional 2D NAND flash. The 3D architecture allows for stacking memory cells vertically, which increases storage density while maintaining performance. This technology also contributes to better endurance and longevity of the memory, addressing the growing demand for efficient storage solutions in modern devices.
Overall, the TC58CVG0S3HRAIJ is a versatile and powerful option for manufacturers looking to integrate advanced memory solutions into their products.
Key features include a high storage capacity, improved read/write speeds, and lower power consumption compared to traditional 2D NAND flash. The 3D architecture allows for stacking memory cells vertically, which increases storage density while maintaining performance. This technology also contributes to better endurance and longevity of the memory, addressing the growing demand for efficient storage solutions in modern devices.
Overall, the TC58CVG0S3HRAIJ is a versatile and powerful option for manufacturers looking to integrate advanced memory solutions into their products.
Features
The TC58CVG0S3HRAIJ is a NAND flash memory device manufactured by Toshiba. It features a 3-bit per cell (TLC) architecture, which enhances storage density and reduces cost per gigabyte. This device is typically used in applications such as mobile devices, SSDs, and other consumer electronics.
Key features include:
1. High Storage Capacity: Offers large storage options suitable for various applications.
2. Fast Read/Write Speeds: Enhanced performance for quick data access and efficient multitasking.
3. Low Power Consumption: Designed for energy efficiency, extending battery life in portable devices.
4. Reliability: Incorporates advanced error correction technologies to ensure data integrity.
5. Durability: Built to withstand high-temperature operations and various environmental conditions.
Overall, the TC58CVG0S3HRAIJ is a versatile solution for modern data storage needs, balancing performance, capacity, and durability.
Key features include:
1. High Storage Capacity: Offers large storage options suitable for various applications.
2. Fast Read/Write Speeds: Enhanced performance for quick data access and efficient multitasking.
3. Low Power Consumption: Designed for energy efficiency, extending battery life in portable devices.
4. Reliability: Incorporates advanced error correction technologies to ensure data integrity.
5. Durability: Built to withstand high-temperature operations and various environmental conditions.
Overall, the TC58CVG0S3HRAIJ is a versatile solution for modern data storage needs, balancing performance, capacity, and durability.
Package
The TC58CVG0S3HRAIJ is a NAND flash memory chip from Toshiba, typically packaged in a BGA (Ball Grid Array) format. This package type allows for a compact design and efficient heat dissipation, making it suitable for various electronic applications requiring high-density storage.
Pinout
The TC58CVG0S3HRAIJ is a NAND flash memory chip manufactured by Toshiba. It features a total pin count of 48 pins. This device is designed for high-density storage applications, typically used in consumer electronics, mobile devices, and solid-state drives (SSDs).
The primary functions of the TC58CVG0S3HRAIJ include data storage, data retention, and high-speed read and write operations. It uses a multi-level cell (MLC) technology to store multiple bits per cell, which enhances its storage capacity. Additionally, it supports advanced features such as wear leveling and error correction, which are crucial for maintaining data integrity and extending the lifespan of the memory. The chip interfaces typically via a Serial Peripheral Interface (SPI) or parallel interface, optimizing performance in various applications.
Overall, the TC58CVG0S3HRAIJ is a versatile NAND flash solution, well-suited for modern digital storage needs.
The primary functions of the TC58CVG0S3HRAIJ include data storage, data retention, and high-speed read and write operations. It uses a multi-level cell (MLC) technology to store multiple bits per cell, which enhances its storage capacity. Additionally, it supports advanced features such as wear leveling and error correction, which are crucial for maintaining data integrity and extending the lifespan of the memory. The chip interfaces typically via a Serial Peripheral Interface (SPI) or parallel interface, optimizing performance in various applications.
Overall, the TC58CVG0S3HRAIJ is a versatile NAND flash solution, well-suited for modern digital storage needs.
Manufacturer
The TC58CVG0S3HRAIJ is manufactured by Toshiba Memory Corporation, which is a subsidiary of Kioxia Holdings Corporation. Kioxia specializes in the development and production of flash memory and solid-state drives (SSDs). The company was formed in 2017 when Toshiba's memory business was spun off, and it has since become a leading player in the memory storage industry, focusing on NAND flash technology. Kioxia serves various markets, including consumer electronics, data centers, and enterprise-level storage solutions.
Application
The TC58CVG0S3HRAIJ is a NAND flash memory chip primarily used in consumer electronics, such as smartphones, tablets, and SSDs. Its applications extend to automotive systems, industrial devices, and embedded systems, where high-density storage and fast data access are essential. The chip supports data-intensive tasks and enhances performance in various applications, including data storage, multimedia processing, and real-time computing.
Equivalent
The TC58CVG0S3HRAIJ is a NAND Flash memory chip from Toshiba. Equivalent products include the Micron MT29F2G01ABAEAWP, Samsung K9GAG08U0M, and SK Hynix H27UCG8T2BTR. Always verify compatibility in terms of specifications and application requirements before substituting.
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