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TC58BVG1S3HTAI0
IC FLASH 2GBIT PARALLEL 48TSOP I
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- 包 48-TFSOP
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規格
| Package | Tray |
| Series | Benand™ |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND (SLC) |
| MemorySize | 2Gb (256M x 8) |
| MemoryInterface | Parallel |
| WriteCycleTime-WordPage | 25ns |
| AccessTime | 25 ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 48-TFSOP (0.724, 18.40mm Width) |
概述
Description
The TC58BVG1S3HTAI0 is a NAND flash memory chip produced by Toshiba (now Kioxia). It features a 3D NAND architecture, allowing for higher data storage density and improved performance compared to traditional 2D NAND. This chip is typically used in consumer electronics, mobile devices, and enterprise applications due to its fast read and write speeds, reliability, and durability.
Key specifications include a large storage capacity, low power consumption, and robust error correction capabilities. The TC58BVG1S3HTAI0 supports various interfaces, making it versatile for different applications. Its design is optimized for high-speed data transfer and efficient storage management, which are critical for modern computing demands. Overall, the TC58BVG1S3HTAI0 represents a significant advancement in NAND technology, enabling the development of faster and more efficient storage solutions.
Key specifications include a large storage capacity, low power consumption, and robust error correction capabilities. The TC58BVG1S3HTAI0 supports various interfaces, making it versatile for different applications. Its design is optimized for high-speed data transfer and efficient storage management, which are critical for modern computing demands. Overall, the TC58BVG1S3HTAI0 represents a significant advancement in NAND technology, enabling the development of faster and more efficient storage solutions.
Features
The TC58BVG1S3HTAI0 is a NAND flash memory chip produced by Toshiba. Key features include:
1. Type: 3D Flash Memory (BiCS FLASH) technology, which stacks memory cells vertically for higher density and efficiency.
2. Capacity: Typically offers a storage capacity of 128GB to 512GB, depending on the specific variant.
3. Interface: Supports a Serial Peripheral Interface (SPI) for high-speed data transfer.
4. Endurance: Designed for high endurance with a significant number of program/erase cycles.
5. Performance: Enhanced read/write speeds suitable for consumer electronics, mobile devices, and industrial applications.
6. Power Efficiency: Low power consumption, making it ideal for battery-operated devices.
7. Form Factor: Available in compact packages suitable for various applications, including smartphones and tablets.
8. Reliability: Built-in error correction and data integrity features to ensure reliable operation over time.
Overall, the TC58BVG1S3HTAI0 offers a balance of performance, capacity, and reliability for modern storage solutions.
1. Type: 3D Flash Memory (BiCS FLASH) technology, which stacks memory cells vertically for higher density and efficiency.
2. Capacity: Typically offers a storage capacity of 128GB to 512GB, depending on the specific variant.
3. Interface: Supports a Serial Peripheral Interface (SPI) for high-speed data transfer.
4. Endurance: Designed for high endurance with a significant number of program/erase cycles.
5. Performance: Enhanced read/write speeds suitable for consumer electronics, mobile devices, and industrial applications.
6. Power Efficiency: Low power consumption, making it ideal for battery-operated devices.
7. Form Factor: Available in compact packages suitable for various applications, including smartphones and tablets.
8. Reliability: Built-in error correction and data integrity features to ensure reliable operation over time.
Overall, the TC58BVG1S3HTAI0 offers a balance of performance, capacity, and reliability for modern storage solutions.
Package
The TC58BVG1S3HTAI0 is packaged in a 48-ball FBGA (Fine-pitch Ball Grid Array) format. This package type is designed for high-density applications, offering a compact footprint and efficient thermal performance.
Pinout
The TC58BVG1S3HTAI0 is a 128Gb NAND flash memory chip manufactured by Toshiba. It features a total of 48 pins. The pin configuration includes power supply pins, ground pins, data pins, and control pins.
Key functions include:
- Power supply pins (VCC, VCCQ): Provide operating voltage.
- Ground pins (GND): Common reference point for the power supply.
- Data input/output pins (DQ0-DQ7): Used for data transfer to and from the memory.
- Control pins (WE, RE, CE): Control write, read, and chip enable operations.
- Command pins (CMD): Used for sending commands to the memory.
This chip is designed for high-performance applications in mobile devices, SSDs, and other storage solutions, supporting features like fast read/write speeds and low power consumption.
Key functions include:
- Power supply pins (VCC, VCCQ): Provide operating voltage.
- Ground pins (GND): Common reference point for the power supply.
- Data input/output pins (DQ0-DQ7): Used for data transfer to and from the memory.
- Control pins (WE, RE, CE): Control write, read, and chip enable operations.
- Command pins (CMD): Used for sending commands to the memory.
This chip is designed for high-performance applications in mobile devices, SSDs, and other storage solutions, supporting features like fast read/write speeds and low power consumption.
Manufacturer
The TC58BVG1S3HTAI0 is manufactured by Toshiba Memory Corporation, now known as Kioxia Corporation following its rebranding in 2019. Kioxia is a leading global provider of flash memory and solid-state drives (SSDs). The company specializes in NAND flash memory technologies and offers a range of products for various applications, including consumer electronics, enterprise storage, and data centers. Kioxia is known for its innovation in memory solutions and plays a significant role in the semiconductor industry, focusing on high-performance storage solutions to meet the demands of modern computing and data management.
Application
The TC58BVG1S3HTAI0 is a NAND Flash memory chip used in various applications, including smartphones, tablets, and other consumer electronics. It is also utilized in solid-state drives (SSDs), industrial storage solutions, automotive systems, and embedded applications, where high-speed data storage and retrieval are essential. Its features support applications requiring high performance, durability, and reliability.
Equivalent
The TC58BVG1S3HTAI0 is a NAND flash memory chip. Equivalent products may include other NAND flash chips with similar specifications from manufacturers like Samsung, Micron, and SK Hynix. Look for products such as Samsung K9GAG08U0E, Micron MT29F32G08, or SK Hynix H26M32002BFR. Always check datasheets for exact specifications to ensure compatibility.
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