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SVF7N65F
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規格
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220F-3 |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 4.4A |
| Pd - Power Dissipation | 46W |
| Drain to Source Voltage | 650V |
| RDS(on) | 1.4Ω@10V,3.5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 21.2nC@10V |
| Input Capacitance(Ciss@Vds) | 789pF |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
概述
Description
The SVF7N65F is a high-voltage N-channel MOSFET designed for power electronics applications. With a voltage rating of 650V and a current rating of 7A, it is suitable for use in switching power supplies, inverters, and motor drivers. The device features low on-resistance, enabling efficient operation and reduced heat generation during switching.
Key specifications include a maximum gate-to-source voltage of ±20V, a low total gate charge, and fast switching speeds, making it ideal for applications that require high efficiency and performance. The SVF7N65F is housed in a TO-220 package, facilitating effective heat dissipation.
Applications typically involve power management systems, automotive electronics, and renewable energy systems. Its reliability and robustness make it a preferred choice for engineers looking to implement efficient power solutions.
Key specifications include a maximum gate-to-source voltage of ±20V, a low total gate charge, and fast switching speeds, making it ideal for applications that require high efficiency and performance. The SVF7N65F is housed in a TO-220 package, facilitating effective heat dissipation.
Applications typically involve power management systems, automotive electronics, and renewable energy systems. Its reliability and robustness make it a preferred choice for engineers looking to implement efficient power solutions.
Features
The SVF7N65F is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (ID) of up to 7A, allowing it to manage significant power loads.
3. On-Resistance (RDS(on)): It features low on-resistance, typically around 0.5 ohms, which reduces power loss and improves efficiency during operation.
4. Gate Threshold Voltage (VGS(th)): The threshold voltage is typically between 2V to 4V, enabling it to be driven effectively by standard logic levels.
5. Package Type: Usually available in TO-220 or similar packages for enhanced thermal performance and heat dissipation.
6. Applications: Ideal for power supplies, converters, and motor drives, where efficient switching is critical.
These characteristics make the SVF7N65F suitable for various industrial and consumer electronics applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (ID) of up to 7A, allowing it to manage significant power loads.
3. On-Resistance (RDS(on)): It features low on-resistance, typically around 0.5 ohms, which reduces power loss and improves efficiency during operation.
4. Gate Threshold Voltage (VGS(th)): The threshold voltage is typically between 2V to 4V, enabling it to be driven effectively by standard logic levels.
5. Package Type: Usually available in TO-220 or similar packages for enhanced thermal performance and heat dissipation.
6. Applications: Ideal for power supplies, converters, and motor drives, where efficient switching is critical.
These characteristics make the SVF7N65F suitable for various industrial and consumer electronics applications.
Package
The SVF7N65F is typically packaged in a TO-220 package type. This package is designed for high-power applications, providing efficient heat dissipation and ease of mounting to heatsinks.
Pinout
The SVF7N65F is an N-channel MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's operation.
2. Drain (D) - The terminal through which the main current flows out.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Body (B) - Internal diode connection (typically connected to the source in standard applications).
The remaining pins include options for various configurations and packaging, which may vary in specific applications. The SVF7N65F is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 7A, making it suitable for power management and switching applications.
1. Gate (G) - Controls the MOSFET's operation.
2. Drain (D) - The terminal through which the main current flows out.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Body (B) - Internal diode connection (typically connected to the source in standard applications).
The remaining pins include options for various configurations and packaging, which may vary in specific applications. The SVF7N65F is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 7A, making it suitable for power management and switching applications.
Manufacturer
The SVF7N65F is manufactured by Sanken Electric Co., Ltd., a Japanese company. Sanken specializes in the design and production of semiconductors, including power transistors, integrated circuits, and other electronic components. Established in 1926, Sanken is known for its innovation in power management solutions, serving various industries such as consumer electronics, automotive, and industrial applications. The SVF7N65F is a N-channel MOSFET designed for high-voltage applications, showcasing Sanken's commitment to providing efficient and reliable electronic components.
Application
The SVF7N65F is a N-channel MOSFET primarily used in power electronics applications. Common areas include:
1. Switching Power Supplies: For efficient voltage regulation.
2. DC-DC Converters: In renewable energy systems.
3. Motor Control: For driving electric motors in automotive and industrial applications.
4. Lighting: In LED drivers and dimmers.
5. Power Management: In consumer electronics to enhance energy efficiency.
Its high voltage and current ratings make it suitable for various high-power applications.
1. Switching Power Supplies: For efficient voltage regulation.
2. DC-DC Converters: In renewable energy systems.
3. Motor Control: For driving electric motors in automotive and industrial applications.
4. Lighting: In LED drivers and dimmers.
5. Power Management: In consumer electronics to enhance energy efficiency.
Its high voltage and current ratings make it suitable for various high-power applications.
Equivalent
The SVF7N65F is an N-channel MOSFET with a rated voltage of 650V and a current capacity of 7A. Equivalent products include:
1. STP7N65M2 (STMicroelectronics)
2. IRF740 (Infineon)
3. FQP7N65 (ON Semiconductor)
4. HUF75639P3 (ON Semiconductor)
Always check the datasheets for specific parameters to ensure compatibility in your application.
1. STP7N65M2 (STMicroelectronics)
2. IRF740 (Infineon)
3. FQP7N65 (ON Semiconductor)
4. HUF75639P3 (ON Semiconductor)
Always check the datasheets for specific parameters to ensure compatibility in your application.
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