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SVF12N65F
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規格
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220F |
| Current - Continuous Drain(Id) | 12A |
| Pd - Power Dissipation | 51W |
| Drain to Source Voltage | 650V |
| RDS(on) | 680mΩ@10V,6A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V |
| Type | 1 N-channel |
概述
Description
The SVF12N65F is a high-voltage N-channel MOSFET designed for power applications. With a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of up to 12A, it is suitable for switching and amplification tasks in various electronic circuits. The device features a low on-resistance, which contributes to improved efficiency and reduced heat generation during operation.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and a total gate charge (Q_g) that facilitates fast switching capabilities. The SVF12N65F is commonly used in applications such as power supplies, motor drives, and inverters due to its robust performance in high-voltage environments.
The MOSFET is typically housed in a TO-220 or similar package, allowing for effective heat dissipation. It is crucial for designers to consider thermal management and proper gate driving techniques to maximize the device's performance and reliability in circuit applications. Overall, the SVF12N65F is a versatile component in modern power electronics.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and a total gate charge (Q_g) that facilitates fast switching capabilities. The SVF12N65F is commonly used in applications such as power supplies, motor drives, and inverters due to its robust performance in high-voltage environments.
The MOSFET is typically housed in a TO-220 or similar package, allowing for effective heat dissipation. It is crucial for designers to consider thermal management and proper gate driving techniques to maximize the device's performance and reliability in circuit applications. Overall, the SVF12N65F is a versatile component in modern power electronics.
Features
The SVF12N65F is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of 12A, allowing it to support moderate load demands.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) typically around 0.22Ω at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling easy drive from standard logic levels.
5. Package Type: Available in TO-220 and other packages for versatile mounting options.
6. Thermal Performance: It features a robust thermal resistance, enhancing reliability in thermal management.
Overall, the SVF12N65F is ideal for applications in power supplies, motor drives, and other high-voltage switching scenarios.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of 12A, allowing it to support moderate load demands.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) typically around 0.22Ω at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling easy drive from standard logic levels.
5. Package Type: Available in TO-220 and other packages for versatile mounting options.
6. Thermal Performance: It features a robust thermal resistance, enhancing reliability in thermal management.
Overall, the SVF12N65F is ideal for applications in power supplies, motor drives, and other high-voltage switching scenarios.
Package
The SVF12N65F is typically packaged in a TO-220 format, which is a standard package used for power MOSFETs. This package provides efficient heat dissipation and ease of mounting on heatsinks, making it suitable for high-power applications.
Pinout
The SVF12N65F is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current enters the MOSFET when it's in the 'on' state. It connects to the load in the circuit.
3. Source (S): This terminal allows the current to exit the MOSFET. It is typically connected to ground or the negative side of the power supply.
The SVF12N65F is designed for applications such as power management, switch mode power supplies, and motor control, featuring a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 12A.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current enters the MOSFET when it's in the 'on' state. It connects to the load in the circuit.
3. Source (S): This terminal allows the current to exit the MOSFET. It is typically connected to ground or the negative side of the power supply.
The SVF12N65F is designed for applications such as power management, switch mode power supplies, and motor control, featuring a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 12A.
Manufacturer
The manufacturer of the SVF12N65F is Sanken Electric Co., Ltd. Founded in 1927 and headquartered in Tokyo, Japan, Sanken Electric is a prominent company in the semiconductor industry. It specializes in the design and manufacture of a wide range of electronic components, including power transistors, diodes, and integrated circuits. The company serves various sectors, including consumer electronics, automotive, and industrial applications, and is recognized for producing high-quality products focused on energy efficiency and reliability.
Application
The SVF12N65F is a high-voltage N-channel MOSFET commonly used in power electronics applications. Key areas include switch mode power supplies (SMPS), electric vehicles, motor drivers, LED lighting, and power inverters. Its high voltage and current handling capabilities make it suitable for industrial and consumer electronics, providing efficient switching for energy conversion and management.
Equivalent
The SVF12N65F is an N-channel MOSFET with specifications of 650V, 12A, and a low R_DS(on). Equivalent products include:
1. STP12NK65Z
2. IRF12N65
3. FQD12N65
4. MTP12N65E
5. PSMN12-65
Ensure to check the datasheets for specific parameters to confirm compatibility.
1. STP12NK65Z
2. IRF12N65
3. FQD12N65
4. MTP12N65E
5. PSMN12-65
Ensure to check the datasheets for specific parameters to confirm compatibility.
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