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SUP57N20-33-E3

Name: SUP57N20-33-E3
Rating: 4.7 (12 reviews)

MOSFET N-CH 200V 57A TO220AB

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資料表 SUP57N20-33-E3 DataSheet
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規格

Supplier	Vishay Siliconix
Package	Tube
Series	TrenchFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	200 V
Current-ContinuousDrain(Id)@25°C	57A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	33mOhm @ 30A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	130 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	5100 pF @ 25 V
PowerDissipation(Max)	3.75W (Ta), 300W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220AB

概述

Description

The SUP57N20-33-E3 is a high-performance N-channel MOSFET designed for power management applications. With a voltage rating of 20V and a continuous drain current of 57A, it is ideal for switching and amplification tasks in power supplies, motor controls, and other electronic devices. The device features low on-state resistance, which enhances efficiency and reduces heat generation during operation.
Key characteristics include fast switching speeds, making it suitable for high-frequency applications. The SUP57N20-33-E3 typically comes in a TO-220 package, facilitating easy heat dissipation. Its robustness and reliability make it a preferred choice for engineers looking to optimize performance in compact designs.
Overall, this MOSFET is an excellent option for applications requiring efficient power management and reliability in challenging environments. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The SUP57N20-33-E3 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of up to 200V, making it suitable for various high-voltage applications.
2. Current Rating: The continuous drain current (Id) is rated at 57A, allowing it to manage significant load currents.
3. On-Resistance: It has a low on-resistance (Rds(on)) of around 33 mΩ, minimizing power loss and improving efficiency during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is typically between 2V to 4V, ensuring compatibility with low-voltage control signals.
5. Package Type: It is housed in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Applications: Suitable for power supplies, motor drives, and DC-DC converters.
Overall, the SUP57N20-33-E3 is optimized for high efficiency and reliability in demanding applications.

Package

The SUP57N20-33-E3 is typically packaged in an TO-220 type package. This package is designed for power devices, offering good thermal performance and ease of mounting to heat sinks.

Pinout

The SUP57N20-33-E3 is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here allows current to flow from the drain to the source.
2. Drain (D): This pin is where the load connects; current flows out of this pin when the device is switched on.
3. Source (S): This pin is connected to the ground or the negative side of the supply; current enters this pin when the MOSFET is activated.
The SUP57N20-33-E3 is designed for high-voltage applications, with a maximum drain-source voltage of 200V and a continuous drain current rating of 57A, making it suitable for various power switching applications.

Manufacturer

The SUP57N20-33-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the technology sector, specializing in discrete semiconductors and passive electronic components. The company designs and produces a wide range of products, including MOSFETs, diodes, capacitors, and resistors, serving various markets such as automotive, industrial, consumer electronics, and telecommunications. Founded in 1962, Vishay is known for its commitment to innovation, quality, and reliability, making it a key player in the electronics industry.

Application

The SUP57N20-33-E3 is a power MOSFET primarily used in applications like power supplies, motor drives, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power management in automotive, telecommunications, and industrial equipment. Additionally, it can be found in inverter circuits for renewable energy systems and in electric vehicle powertrains.

Equivalent

The SUP57N20-33-E3 is an N-channel MOSFET. Equivalent products include the IRF3205, STP55NF06L, and FQP55N06L. Always check specifications such as voltage, current handling, and package type for compatibility before substitution.