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STWA88N65M5

Name: STWA88N65M5
Rating: 4.7 (12 reviews)

MOSFET N-CH 650V 84A TO247

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資料表 STWA88N65M5 DataSheet
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規格

Supplier	STMicroelectronics
Package	Tube
Series	MDmesh™ V
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	650 V
Current-ContinuousDrain(Id)@25°C	84A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	29mOhm @ 42A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	204 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	8825 pF @ 100 V
PowerDissipation(Max)	450W (Tc)
OperatingTemperature	150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-247-3

概述

Description

STWA88N65M5 (often listed as STW8N65M5/A88N65M5) is an STMicroelectronics high‑voltage N‑channel enhancement MOSFET from the STW family. It’s designed for switching power electronics.
Key points:
- Type: N‑channel power MOSFET
- Vds: about 650 V (high-voltage class)
- Id: around 8 A (depends on package and cooling)
- Technology: trench MOSFET with rugged switching/avalanche characteristics
- Applications: switch-mode power supplies, PFCs, DC‑DC converters, motor drives, inverters
- Packaging: available in power packages (e.g., D²PAK/TO‑263, TO‑220 variants); check exact variant for pinout and thermal/leadframe details
- Important specs to verify: Rds(on), gate charge (Qg), Qgs/Qgd, switching times, and avalanche energy rating
For exact electrical figures, consult the specific datasheet for the exact package/version you’re using.

Features

STW88N65M5 is an STMicroelectronics N-channel Power MOSFET (650 V class). Key features:
- N-channel MOSFET with 650 V blocking capability
- High drain current capability (roughly 80–90 A depending on package/conditions)
- On-state resistance in the HV range (typical around ~0.8–1.0 Ω)
- Trench MOSFET structure for improved switching performance
- Avalanche energy (EAS) rugged for inductive load switching
- Built-in body diode with fast switching characteristics
- Gate drive: standard 10 V for full enhancement; gate threshold ≈ 2–4 V
- Low gate charge for efficient drive
- Wide operating temperature range; max junction temp around 150°C
- Packaging options: D²PAK/DPAK (and other variants depending on supplier)
For exact numbers (RDS(on), ID, EAS, Qg) and available packages, please refer to the current ST datasheet.

Package

D²PAK (TO-263) surface-mount package.

Pinout

- Pin count: 8 pins
- Function: N-channel enhancement-mode power MOSFET (high-voltage switch) in ST’s PowerFLAT 8 package (650 V class).

Manufacturer

Manufacturer: STMicroelectronics (ST).
What kind of company: A multinational electronics and semiconductor company that designs, manufactures, and markets semiconductor devices, ICs, power electronics, sensors, and related components.

Application

STWA88N65M5 is a high‑voltage N‑channel power MOSFET (650 V class). Common applications include:
- Offline switch‑mode power supplies (flyback/forward, PFC)
- Motor drives (BLDC/DC motors)
- DC–DC converters and inverters for solar/energy storage
- Uninterruptible power supplies (UPS)
- General industrial and automotive power electronics