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STWA12N120K5
MOSFET N-CH 1200V 12A TO247
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- 製造商。 部分 #STWA12N120K5
- 包 TO-247 long leads
- 資料表 STWA12N120K5 DataSheet
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規格
| Package | Tube |
| Series | MDmesh™ K5 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 690mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 44.2 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1370 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247 Long Leads |
概述
Description
The STWA12N120K5 is a high-performance power MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by STMicroelectronics. It features a maximum drain-source voltage (V_DS) of 120V and a continuous drain current (I_D) rating of 12A, making it suitable for various applications, including power management, motor control, and DC-DC converters.
With a low on-resistance (R_DS(on)) value, the STWA12N120K5 provides high efficiency and reduced power loss during operation. It is designed for use in switching applications, where fast switching speeds and thermal performance are critical. The device is housed in a TO-220 package, which offers good thermal dissipation properties.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V, a maximum power dissipation rating, and high-temperature operation capabilities. Its robustness and reliability make it a popular choice for engineers designing circuits that require efficient power switching solutions. Always consult the datasheet for detailed electrical characteristics and thermal management guidelines.
With a low on-resistance (R_DS(on)) value, the STWA12N120K5 provides high efficiency and reduced power loss during operation. It is designed for use in switching applications, where fast switching speeds and thermal performance are critical. The device is housed in a TO-220 package, which offers good thermal dissipation properties.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V, a maximum power dissipation rating, and high-temperature operation capabilities. Its robustness and reliability make it a popular choice for engineers designing circuits that require efficient power switching solutions. Always consult the datasheet for detailed electrical characteristics and thermal management guidelines.
Features
The STWA12N120K5 is a high-performance N-channel MOSFET from STMicroelectronics. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (ID) up to 12A, which allows for efficient power switching.
3. RDS(on): It offers a low on-resistance (RDS(on)), typically around 0.12 ohms, reducing power losses and improving efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) typically ranges from 2V to 4V, enabling easy drive from low-voltage logic.
5. Package Type: The MOSFET comes in a TO-220 package, ensuring effective thermal dissipation and ease of mounting.
6. Applications: Commonly used in power supplies, motor control, and automotive applications due to its robust performance.
Overall, the STWA12N120K5 is designed for efficiency and reliability in demanding electronic circuits.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (ID) up to 12A, which allows for efficient power switching.
3. RDS(on): It offers a low on-resistance (RDS(on)), typically around 0.12 ohms, reducing power losses and improving efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) typically ranges from 2V to 4V, enabling easy drive from low-voltage logic.
5. Package Type: The MOSFET comes in a TO-220 package, ensuring effective thermal dissipation and ease of mounting.
6. Applications: Commonly used in power supplies, motor control, and automotive applications due to its robust performance.
Overall, the STWA12N120K5 is designed for efficiency and reliability in demanding electronic circuits.
Package
The STWA12N120K5 is packaged in a TO-220 housing. This package type is commonly used for power transistors and semiconductor devices, providing good thermal performance and allowing for easy mounting to heatsinks.
Pinout
The STWA12N120K5 is an N-channel MOSFET manufactured by STMicroelectronics. It has a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the MOSFET's switching operation by applying a voltage to allow or inhibit current flow between the drain and source.
2. Drain (D) - The main current-carrying terminal where current flows out of the MOSFET when it is in the 'on' state.
3. Source (S) - The terminal through which current enters the MOSFET when it is conducting.
4. Body Diode - While not a pin, it's important to note that there is an intrinsic body diode between the drain and source, allowing current to flow in the reverse direction when necessary.
This MOSFET is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of 12A.
1. Gate (G) - This pin controls the MOSFET's switching operation by applying a voltage to allow or inhibit current flow between the drain and source.
2. Drain (D) - The main current-carrying terminal where current flows out of the MOSFET when it is in the 'on' state.
3. Source (S) - The terminal through which current enters the MOSFET when it is conducting.
4. Body Diode - While not a pin, it's important to note that there is an intrinsic body diode between the drain and source, allowing current to flow in the reverse direction when necessary.
This MOSFET is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of 12A.
Manufacturer
The STWA12N120K5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products and solutions for various applications, including automotive, industrial, consumer electronics, and communication systems. Established in 1987, the company is headquartered in Geneva, Switzerland, and operates worldwide, focusing on innovation and sustainability in the semiconductor industry. They are known for their expertise in analog, digital, and mixed-signal devices, and they also offer microcontrollers and power management solutions.
Application
The STWA12N120K5 is a high-voltage N-channel MOSFET primarily used in power management applications. Its application areas include:
1. Switching Power Supplies - For efficient power conversion.
2. Motor Control - In various electric motor drives.
3. LED Drivers - For efficient lighting applications.
4. DC-DC Converters - In renewable energy systems.
5. Audio Amplifiers - Enhancing audio output efficiency.
Its high voltage and current handling capabilities make it suitable for industrial and consumer electronics.
1. Switching Power Supplies - For efficient power conversion.
2. Motor Control - In various electric motor drives.
3. LED Drivers - For efficient lighting applications.
4. DC-DC Converters - In renewable energy systems.
5. Audio Amplifiers - Enhancing audio output efficiency.
Its high voltage and current handling capabilities make it suitable for industrial and consumer electronics.
Equivalent
The STWA12N120K5 is a power MOSFET with a 1200V rating and 12A continuous current. Equivalent products include:
1. Infineon IPP12N120
2. ON Semiconductor NTP12N120
3. Vishay SiHP12N120
4. Fairchild FQP12N120
Always verify specifications like RDS(on) and gate charge for compatibility in specific applications.
1. Infineon IPP12N120
2. ON Semiconductor NTP12N120
3. Vishay SiHP12N120
4. Fairchild FQP12N120
Always verify specifications like RDS(on) and gate charge for compatibility in specific applications.
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