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STW55NM60ND
MOSFET N-CH 600V 51A TO247-3
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- 製造商。 部分 #STW55NM60ND
- 包 TO-247
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規格
| Package | Tube |
| Series | FDmesh™ II |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 51A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 25.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 190 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 5800 pF @ 50 V |
| PowerDissipation(Max) | 350W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概述
Description
The STW55NM60ND is a high-voltage N-channel MOSFET designed for power applications. It belongs to the STMicroelectronics's STW series and features a voltage rating of 600V, making it suitable for various industrial and consumer applications. With a maximum continuous drain current of 55A, it provides efficient switching performance and low on-resistance (R_DS(on)) of 0.12 ohms at a gate-source voltage of 10V. This MOSFET is ideal for use in power supplies, converters, and motor drives, where high efficiency and thermal performance are critical.
The device is packaged in a TO-220 format, facilitating heat dissipation, and is designed for easy integration into existing circuits. Its fast switching capabilities enhance the efficiency of power electronics. Overall, the STW55NM60ND is a reliable choice for designers looking to optimize performance in high-voltage applications.
The device is packaged in a TO-220 format, facilitating heat dissipation, and is designed for easy integration into existing circuits. Its fast switching capabilities enhance the efficiency of power electronics. Overall, the STW55NM60ND is a reliable choice for designers looking to optimize performance in high-voltage applications.
Features
The STW55NM60ND is a high-voltage N-channel MOSFET designed for a variety of power applications. Key features include:
1. Voltage Rating: Rated for a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (ID) of 55A, ensuring robust performance in demanding environments.
3. Low On-Resistance: With a maximum on-resistance (RDS(on)) of around 0.07 ohms at VGS of 10V, it provides efficient conduction and reduced power losses.
4. Gate Threshold Voltage: Features a gate threshold voltage (VGS(th)) ranging from 2V to 4V, allowing for efficient switching at low drive voltages.
5. Fast Switching: High-speed switching capabilities minimize losses during operation, making it suitable for applications such as switch-mode power supplies and motor drives.
6. Package Type: Typically available in TO-220 or DPAK packages, which facilitate easy mounting and heat dissipation.
Overall, the STW55NM60ND is well-suited for various industrial and consumer electronics applications requiring reliable performance.
1. Voltage Rating: Rated for a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (ID) of 55A, ensuring robust performance in demanding environments.
3. Low On-Resistance: With a maximum on-resistance (RDS(on)) of around 0.07 ohms at VGS of 10V, it provides efficient conduction and reduced power losses.
4. Gate Threshold Voltage: Features a gate threshold voltage (VGS(th)) ranging from 2V to 4V, allowing for efficient switching at low drive voltages.
5. Fast Switching: High-speed switching capabilities minimize losses during operation, making it suitable for applications such as switch-mode power supplies and motor drives.
6. Package Type: Typically available in TO-220 or DPAK packages, which facilitate easy mounting and heat dissipation.
Overall, the STW55NM60ND is well-suited for various industrial and consumer electronics applications requiring reliable performance.
Package
The STW55NM60ND is typically packaged in a TO-220 format, which is a common package type for power MOSFETs. This package provides effective heat dissipation and is suitable for various applications in power electronics.
Pinout
The STW55NM60ND is a N-channel MOSFET with a pin count of 3. Its pins are designated as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where current enters the MOSFET. It connects to the load in a circuit.
3. Source (S): This terminal is where current exits the MOSFET. It typically connects to ground or the negative side of the power supply.
The STW55NM60ND is designed for high-voltage applications, supporting a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 55A. Its characteristics make it suitable for various applications, including power supplies and motor control circuits.
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where current enters the MOSFET. It connects to the load in a circuit.
3. Source (S): This terminal is where current exits the MOSFET. It typically connects to ground or the negative side of the power supply.
The STW55NM60ND is designed for high-voltage applications, supporting a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 55A. Its characteristics make it suitable for various applications, including power supplies and motor control circuits.
Manufacturer
The STW55NM60ND is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of electronic components, including integrated circuits, microcontrollers, and power devices. The company serves various industries, including automotive, industrial, consumer electronics, and communication. Founded in 1987, STMicroelectronics is known for its innovation in technologies such as analog, digital, and mixed-signal devices. Its products are widely used in applications like power management, motor control, and telecommunications. With a strong focus on research and development, STMicroelectronics aims to drive advancements in electronics and promote sustainable technologies.
Application
The STW55NM60ND is a power MOSFET widely used in applications such as DC-DC converters, motor control, power supplies, and inverters. Its high voltage rating (600V) and low on-resistance make it suitable for industrial and automotive applications, including switch-mode power supplies and renewable energy systems like solar inverters.
Equivalent
The STW55NM60ND is a 600V N-channel MOSFET with a 55A rating. Equivalent products include:
1. IRF320 - 55A, 200V N-channel MOSFET.
2. FQP55N60 - 55A, 600V N-channel MOSFET.
3. MTP55N60E - 55A, 600V N-channel MOSFET.
4. BTA55-600V - 55A, 600V N-channel MOSFET.
Always verify specifications such as Rds(on), gate charge, and thermal characteristics for your specific application.
1. IRF320 - 55A, 200V N-channel MOSFET.
2. FQP55N60 - 55A, 600V N-channel MOSFET.
3. MTP55N60E - 55A, 600V N-channel MOSFET.
4. BTA55-600V - 55A, 600V N-channel MOSFET.
Always verify specifications such as Rds(on), gate charge, and thermal characteristics for your specific application.
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