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STW48N60DM2
MOSFET N-CH 600V 40A TO247
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規格
| Series | MDmesh™ DM2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 100 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | STW48 |
概述
Description
The STW48N60DM2 is a power MOSFET designed by STMicroelectronics. It belongs to the MDmesh DM2 series, which is known for its high efficiency and low on-resistance. This specific model is an N-channel MOSFET with a drain-source voltage (V_ds) rating of 600V and a continuous drain current (I_d) of 48A. It features an optimized design that supports fast switching and low energy loss, making it suitable for high-efficiency power applications.
Key characteristics of the STW48N60DM2 include a low gate charge and low output capacitance, which help achieve reduced switching losses, leading to higher efficiency in power conversion systems. It is commonly used in applications such as power supplies, converters, motor drivers, and other high-power electronic systems.
The package type for this MOSFET is TO-247, offering high thermal performance and reliability in demanding environments. Overall, the STW48N60DM2 is a robust solution for engineers looking for a balance of high performance and efficiency in their power management designs.
Key characteristics of the STW48N60DM2 include a low gate charge and low output capacitance, which help achieve reduced switching losses, leading to higher efficiency in power conversion systems. It is commonly used in applications such as power supplies, converters, motor drivers, and other high-power electronic systems.
The package type for this MOSFET is TO-247, offering high thermal performance and reliability in demanding environments. Overall, the STW48N60DM2 is a robust solution for engineers looking for a balance of high performance and efficiency in their power management designs.
Features
The STW48N60DM2 is a power MOSFET transistor produced by STMicroelectronics. It is part of the MDmesh™ DM2 series, known for combining low gate charge and high switching performance. Here are some of its key features:
1. Voltage Rating: It has a drain-source breakdown voltage (V_DS) of 600V, making it suitable for medium to high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 48A, allowing it to handle a substantial amount of current.
3. Low On-State Resistance: It features a low R_DS(on), which translates to lower conduction losses and increased efficiency in power conversion applications.
4. Fast Switching: Optimized for fast switching, which is important for applications requiring high efficiency and reduced electromagnetic interference (EMI).
5. Reduced Gate Charge: The device has a low gate charge, enabling efficient drive and reduced power losses in the gate drive circuit.
6. Applications: Commonly used in power supplies, converters, and motor control, especially where high efficiency and reliability are critical.
7. Package: It typically comes in a TO-247 package, which aids in heat dissipation and can be mounted easily.
These features make the STW48N60DM2 ideal for a variety of power management applications, particularly where efficiency and thermal performance are important.
1. Voltage Rating: It has a drain-source breakdown voltage (V_DS) of 600V, making it suitable for medium to high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 48A, allowing it to handle a substantial amount of current.
3. Low On-State Resistance: It features a low R_DS(on), which translates to lower conduction losses and increased efficiency in power conversion applications.
4. Fast Switching: Optimized for fast switching, which is important for applications requiring high efficiency and reduced electromagnetic interference (EMI).
5. Reduced Gate Charge: The device has a low gate charge, enabling efficient drive and reduced power losses in the gate drive circuit.
6. Applications: Commonly used in power supplies, converters, and motor control, especially where high efficiency and reliability are critical.
7. Package: It typically comes in a TO-247 package, which aids in heat dissipation and can be mounted easily.
These features make the STW48N60DM2 ideal for a variety of power management applications, particularly where efficiency and thermal performance are important.
Package
The STW48N60DM2 is a power MOSFET that typically comes in a TO-247 package. This package type is designed to handle high power and provide efficient thermal management, making it suitable for various power applications.
Pinout
The STW48N60DM2 is a power MOSFET transistor designed for high-efficiency applications. It is typically used in power management, motor control, and other high-power applications. The device comes in a TO-247 package and has three pins:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows when the MOSFET is on. The drain is connected to the load in most applications.
3. Source (S): This pin is connected to the ground or return path of the circuit. The source is where the current enters the MOSFET.
The STW48N60DM2 is a part of the MDmesh DM2 series, featuring low on-resistance and high switching speed, making it suitable for various high-efficiency applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows when the MOSFET is on. The drain is connected to the load in most applications.
3. Source (S): This pin is connected to the ground or return path of the circuit. The source is where the current enters the MOSFET.
The STW48N60DM2 is a part of the MDmesh DM2 series, featuring low on-resistance and high switching speed, making it suitable for various high-efficiency applications.
Manufacturer
The STW48N60DM2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor products, including microcontrollers, sensors, power management devices, and discrete components like transistors and diodes. The company serves various industries such as automotive, industrial, personal electronics, and communications.
Application
The STW48N60DM2 is a power MOSFET designed for high-efficiency applications. It is commonly used in areas such as power supplies, motor control, lighting systems, and renewable energy systems. Its ability to handle high voltages and currents makes it suitable for use in industrial automation, electric vehicle systems, and high-power inverters. The device's robust performance in switching applications also makes it ideal for use in converters and uninterruptible power supplies (UPS).
Equivalent
The STW48N60DM2 chip is a power MOSFET. Equivalent products might include other N-channel MOSFETs with similar voltage, current, and Rds(on) specifications. Some potential equivalents are the IRFP460, FDPF16N50, or the IPW60R041C6, depending on the specific requirements of the application such as package type and switching speed. Always verify datasheet specifications to ensure compatibility.
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