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STW34NM60N
MOSFET N-CH 600V 29A TO247-3
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- 製造商。 部分 #STW34NM60N
- 包 TO-247
- 資料表 STW34NM60N DataSheet
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規格
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 29A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 105mOhm @ 14.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2722 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概述
Description
The STW34NM60N is a high-performance N-channel MOSFET designed for power applications, particularly in switch-mode power supplies and motor control. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) rating of 34A. With a low on-resistance (Rds(on)) of approximately 0.034 ohms, it minimizes power losses, enhancing efficiency in circuits.
The device is housed in a TO-220 package, which provides good thermal performance, allowing for effective heat dissipation during operation. The STW34NM60N is suitable for applications requiring fast switching speeds and high reliability, making it ideal for synchronous rectification and inverters.
Additionally, the MOSFET is designed with a robust gate oxide structure to withstand high-voltage spikes, ensuring durability in harsh environments. Overall, the STW34NM60N is a versatile component that aids in achieving improved performance and efficiency in various electronic circuits.
The device is housed in a TO-220 package, which provides good thermal performance, allowing for effective heat dissipation during operation. The STW34NM60N is suitable for applications requiring fast switching speeds and high reliability, making it ideal for synchronous rectification and inverters.
Additionally, the MOSFET is designed with a robust gate oxide structure to withstand high-voltage spikes, ensuring durability in harsh environments. Overall, the STW34NM60N is a versatile component that aids in achieving improved performance and efficiency in various electronic circuits.
Features
The STW34NM60N is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 34A at a temperature of 25°C, allowing for significant power handling.
3. R_DS(on): Low on-resistance (approximately 0.34 ohms at V_GS = 10V), which minimizes power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): Range of 2 to 4V, enabling it to be driven effectively with standard logic levels.
5. Fast Switching: Suitable for high-frequency applications due to its low gate charge (Q_g), enhancing efficiency in switching operations.
6. Thermal Performance: Comes in a TO-220 package, providing good thermal dissipation capabilities.
These features make the STW34NM60N ideal for applications such as switch-mode power supplies, motor drivers, and other power management systems.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 34A at a temperature of 25°C, allowing for significant power handling.
3. R_DS(on): Low on-resistance (approximately 0.34 ohms at V_GS = 10V), which minimizes power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): Range of 2 to 4V, enabling it to be driven effectively with standard logic levels.
5. Fast Switching: Suitable for high-frequency applications due to its low gate charge (Q_g), enhancing efficiency in switching operations.
6. Thermal Performance: Comes in a TO-220 package, providing good thermal dissipation capabilities.
These features make the STW34NM60N ideal for applications such as switch-mode power supplies, motor drivers, and other power management systems.
Package
The STW34NM60N is typically packaged in a TO-220 package type. This package allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
Pinout
The STW34NM60N is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This is the control pin used to turn the MOSFET on or off by applying a voltage.
2. Drain (D): This pin connects to the load; current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin connects to the ground or the negative side of the power supply in a typical configuration.
The STW34NM60N is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 34A, making it suitable for high-voltage and high-current applications, such as power supplies, motor drives, and inverters.
1. Gate (G): This is the control pin used to turn the MOSFET on or off by applying a voltage.
2. Drain (D): This pin connects to the load; current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin connects to the ground or the negative side of the power supply in a typical configuration.
The STW34NM60N is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 34A, making it suitable for high-voltage and high-current applications, such as power supplies, motor drives, and inverters.
Manufacturer
The STW34NM60N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for producing a wide range of electronic components, including power management devices, microcontrollers, and sensors. The company serves various markets, including automotive, industrial, personal electronics, and communication, making it a key player in the semiconductor industry. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is recognized for its innovation and commitment to sustainability in technology development.
Application
The STW34NM60N is a N-channel MOSFET typically used in power electronics applications such as power supplies, motor drives, and converters. Its high voltage and current ratings make it suitable for switch-mode power supplies (SMPS), inverters, and audio amplifiers. It can also be employed in automotive applications and industrial equipment where efficiency and thermal performance are critical.
Equivalent
The STW34NM60N is a N-channel MOSFET with a 600V rating, 34A current, and Rds(on) of 0.34Ω. Equivalent products include:
1. IRFHC40
2. MTP50N60E
3. FQP50N60
4. IXFH34N60P
Always verify specifications like voltage, current, and Rds(on) before substitution.
1. IRFHC40
2. MTP50N60E
3. FQP50N60
4. IXFH34N60P
Always verify specifications like voltage, current, and Rds(on) before substitution.
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