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STW25N80K5
MOSFET N-CH 800V 19.5A TO247
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規格
| Series | SuperMESH5™ |
| Part Status | Active |
| Base Product Number | STW25 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 19.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 19.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 100 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package | TO-247-3 |
| Packaging | Tube |
概述
Description
The STW25N80K5 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage and high-efficiency applications. It features a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) of 25A at a junction temperature of 25°C. The device is optimized for power management in switch-mode power supplies, industrial applications, and motor control.
Key specifications include a low on-resistance (Rds(on)) of around 0.20 ohms, which minimizes conduction losses and enhances thermal performance. It also has a low gate threshold voltage, allowing easy interfacing with standard control signals. The STW25N80K5 is packaged in TO-220 and DPAK, making it suitable for various thermal management solutions.
Its robust design ensures reliability in demanding conditions, making it a popular choice in power electronics. Overall, the STW25N80K5 offers an efficient solution for designers looking to achieve high performance in their circuits.
Key specifications include a low on-resistance (Rds(on)) of around 0.20 ohms, which minimizes conduction losses and enhances thermal performance. It also has a low gate threshold voltage, allowing easy interfacing with standard control signals. The STW25N80K5 is packaged in TO-220 and DPAK, making it suitable for various thermal management solutions.
Its robust design ensures reliability in demanding conditions, making it a popular choice in power electronics. Overall, the STW25N80K5 offers an efficient solution for designers looking to achieve high performance in their circuits.
Features
The STW25N80K5 is a power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 800V, suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (Id) is 25A, allowing for significant power handling.
3. RDS(on): The on-resistance (RDS(on)) is low at around 0.24 Ω, which helps reduce conduction losses.
4. Fast Switching: The device offers fast switching capabilities, making it ideal for switching power supplies, inverters, and motor control applications.
5. Thermal Performance: With a maximum junction temperature of 150°C, it provides good thermal stability.
6. Package: Available in a TO-220 package, ensuring efficient heat dissipation.
7. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is between 2V and 4V, facilitating easy drive requirements.
Overall, the STW25N80K5 is suitable for various high-voltage applications in industrial and consumer electronics.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 800V, suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (Id) is 25A, allowing for significant power handling.
3. RDS(on): The on-resistance (RDS(on)) is low at around 0.24 Ω, which helps reduce conduction losses.
4. Fast Switching: The device offers fast switching capabilities, making it ideal for switching power supplies, inverters, and motor control applications.
5. Thermal Performance: With a maximum junction temperature of 150°C, it provides good thermal stability.
6. Package: Available in a TO-220 package, ensuring efficient heat dissipation.
7. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is between 2V and 4V, facilitating easy drive requirements.
Overall, the STW25N80K5 is suitable for various high-voltage applications in industrial and consumer electronics.
Package
The STW25N80K5 is packaged in a TO-220 package type. This package provides good thermal dissipation and is designed for high-power applications in switching devices.
Pinout
The STW25N80K5 is a N-channel MOSFET designed for high voltage and high-speed applications. It features a pin count of 5. The pin configuration is as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): Connected to ground or the negative side of the power supply; current flows from source to drain when on.
4. Body (B): Internally connected to the source; often not separately accessible in standard configurations.
The STW25N80K5 has a maximum drain-source voltage (V_DS) of 800V, a continuous drain current rating (I_D) of 25A, and a low on-resistance (R_DS(on)), making it suitable for applications like power supplies, motor control, and other switching applications. Its low gate charge enables fast switching capabilities, enhancing efficiency in circuits.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): Connected to ground or the negative side of the power supply; current flows from source to drain when on.
4. Body (B): Internally connected to the source; often not separately accessible in standard configurations.
The STW25N80K5 has a maximum drain-source voltage (V_DS) of 800V, a continuous drain current rating (I_D) of 25A, and a low on-resistance (R_DS(on)), making it suitable for applications like power supplies, motor control, and other switching applications. Its low gate charge enables fast switching capabilities, enhancing efficiency in circuits.
Manufacturer
The STW25N80K5 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics is known for its diverse portfolio of products, including microcontrollers, sensors, analog ICs, and power management solutions. The company serves various industries such as automotive, industrial, personal electronics, and communications. STMicroelectronics focuses on innovation and sustainability, providing advanced technology solutions for a wide range of applications.
Application
The STW25N80K5 is a high-voltage NMOS power transistor primarily used in various applications, including power supplies, motor drives, and industrial automation. Its features make it suitable for switching applications in DC-DC converters, inverters for renewable energy systems, and lighting systems. Additionally, it is utilized in automotive and consumer electronics for efficient energy management solutions.
Equivalent
The STW25N80K5 is a N-channel MOSFET with a voltage rating of 800V and a continuous current rating of 25A. Equivalent products include:
1. IRF840 - 500V, 8A
2. MTP25N80E - 800V, 25A
3. BTA25-800V - 800V, 25A
4. FQP25N80C - 800V, 25A
Always check specific parameters like RDS(on), gate charge, and thermal characteristics to ensure compatibility.
1. IRF840 - 500V, 8A
2. MTP25N80E - 800V, 25A
3. BTA25-800V - 800V, 25A
4. FQP25N80C - 800V, 25A
Always check specific parameters like RDS(on), gate charge, and thermal characteristics to ensure compatibility.
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