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STW12NK90Z
MOSFET N-CH 900V 11A TO247-3
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- 包 TO-247
- 資料表 STW12NK90Z DataSheet
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規格
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 880mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 152 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3500 pF @ 25 V |
| PowerDissipation(Max) | 230W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概述
Description
The STW12NK90Z is a N-channel power MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (VDS) of 900V and a continuous drain current (ID) of 12A, making it suitable for various power management tasks, including switching power supplies and motor control.
One of its key attributes is the low on-resistance (RDS(on)) of approximately 1.5 ohms, which enhances efficiency by minimizing power losses during operation. The device also has a fast switching speed, beneficial for high-frequency applications.
The MOSFET is housed in a TO-220 package, enabling effective heat dissipation, which is critical in high-power scenarios. Its gate threshold voltage (VGS(th)) typically ranges from 2V to 4V, allowing it to be easily driven by standard logic levels.
Overall, the STW12NK90Z is an excellent choice for engineers seeking reliable performance in high-voltage environments, offering a balance of efficiency, thermal management, and ease of integration into power circuits.
One of its key attributes is the low on-resistance (RDS(on)) of approximately 1.5 ohms, which enhances efficiency by minimizing power losses during operation. The device also has a fast switching speed, beneficial for high-frequency applications.
The MOSFET is housed in a TO-220 package, enabling effective heat dissipation, which is critical in high-power scenarios. Its gate threshold voltage (VGS(th)) typically ranges from 2V to 4V, allowing it to be easily driven by standard logic levels.
Overall, the STW12NK90Z is an excellent choice for engineers seeking reliable performance in high-voltage environments, offering a balance of efficiency, thermal management, and ease of integration into power circuits.
Features
The STW12NK90Z is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage applications.
2. Current Rating: It has a continuous drain current (I_D) of 12A, allowing for significant current handling.
3. R_DS(on): It boasts a low on-resistance of approximately 0.9Ω, which enhances efficiency by reducing power losses.
4. Fast Switching: The device is optimized for fast switching speeds, suitable for applications like switch mode power supplies (SMPS) and motor control.
5. Thermal Management: With a maximum junction temperature (T_J) of 150°C, it allows for better thermal performance in demanding environments.
6. Package Type: Available in a TO-220 package for effective heat dissipation and easy mounting.
7. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring compatibility with various control circuits.
Overall, the STW12NK90Z is ideal for high-efficiency and high-voltage applications.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage applications.
2. Current Rating: It has a continuous drain current (I_D) of 12A, allowing for significant current handling.
3. R_DS(on): It boasts a low on-resistance of approximately 0.9Ω, which enhances efficiency by reducing power losses.
4. Fast Switching: The device is optimized for fast switching speeds, suitable for applications like switch mode power supplies (SMPS) and motor control.
5. Thermal Management: With a maximum junction temperature (T_J) of 150°C, it allows for better thermal performance in demanding environments.
6. Package Type: Available in a TO-220 package for effective heat dissipation and easy mounting.
7. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring compatibility with various control circuits.
Overall, the STW12NK90Z is ideal for high-efficiency and high-voltage applications.
Package
The STW12NK90Z is typically available in a TO-220 package type. This package provides good thermal performance and is suitable for high-power applications.
Pinout
The STW12NK90Z is an N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows or stops the flow of current between the drain and source.
2. Drain (D) - This pin is where the current flows out of the MOSFET. It connects to the load in the circuit.
3. Source (S) - This pin connects to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
The STW12NK90Z is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 900V and a continuous drain current (I_D) of 12A. This makes it suitable for use in power supplies, converters, and motor control applications.
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows or stops the flow of current between the drain and source.
2. Drain (D) - This pin is where the current flows out of the MOSFET. It connects to the load in the circuit.
3. Source (S) - This pin connects to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
The STW12NK90Z is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 900V and a continuous drain current (I_D) of 12A. This makes it suitable for use in power supplies, converters, and motor control applications.
Manufacturer
The STW12NK90Z is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its diverse range of products, including microcontrollers, power management devices, and analog components, serving various industries such as automotive, consumer electronics, and industrial applications. Founded in 1987, the company is headquartered in Geneva, Switzerland, and operates in multiple countries, focusing on innovation and sustainability in technology development.
Application
The STW12NK90Z is a high-voltage N-channel MOSFET used in various applications, including power supplies, motor drives, and switch-mode power supplies (SMPS). Its low on-resistance and high voltage rating make it suitable for automotive, industrial, and consumer electronics. Additionally, it is utilized in circuit protection and energy-efficient systems, as well as in renewable energy applications like solar inverters.
Equivalent
The STW12NK90Z is a MOSFET with a voltage rating of 900V and a current rating of 12A. Equivalent products include:
1. IRF840 - 500V, 8A
2. MTP12N90E - 900V, 12A
3. FQP13N90 - 900V, 13A
4. BTA12-900V - 900V, 12A (for similar applications)
Always check the datasheet for specific parameters before substituting.
1. IRF840 - 500V, 8A
2. MTP12N90E - 900V, 12A
3. FQP13N90 - 900V, 13A
4. BTA12-900V - 900V, 12A (for similar applications)
Always check the datasheet for specific parameters before substituting.
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