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STS10N3LH5
MOSFET N-CH 30V 10A 8SO
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ V |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 21mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 4.6 nC @ 5 V |
| Vgs(Max) | ±22V |
| InputCapacitance(Ciss)(Max)@Vds | 475 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
概述
Description
STN10N3LH5 refers to a specific type of transgenic mouse model commonly used in scientific research, particularly in the fields of genetics, developmental biology, and disease modeling. These mice are genetically modified to express certain genes or traits that allow researchers to study the effects of these modifications on development, physiology, and disease processes.
The STN10N3LH5 mouse model is valuable for investigating the underlying mechanisms of various diseases, including cancer, neurodegenerative disorders, and metabolic diseases. By observing how these mice respond to treatments or environmental changes, scientists can gain insights that may lead to new therapeutic approaches.
In addition to their use in basic research, transgenic models like STN10N3LH5 are essential for preclinical studies, helping to assess the potential efficacy and safety of new drugs before they proceed to human clinical trials. Overall, these models contribute significantly to our understanding of complex biological systems and disease mechanisms.
The STN10N3LH5 mouse model is valuable for investigating the underlying mechanisms of various diseases, including cancer, neurodegenerative disorders, and metabolic diseases. By observing how these mice respond to treatments or environmental changes, scientists can gain insights that may lead to new therapeutic approaches.
In addition to their use in basic research, transgenic models like STN10N3LH5 are essential for preclinical studies, helping to assess the potential efficacy and safety of new drugs before they proceed to human clinical trials. Overall, these models contribute significantly to our understanding of complex biological systems and disease mechanisms.
Features
The STS10N3LH5 is an N-channel MOSFET designed for low-voltage applications, offering high efficiency and fast switching capabilities. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 30V, making it suitable for low-voltage power management.
2. Current Rating: It can handle continuous drain currents, usually around 10A, depending on the thermal conditions.
3. R_DS(on): Low on-resistance (R_DS(on)) value, which minimizes power loss and heat generation during operation.
4. Fast Switching: Capable of high-speed switching, ideal for applications in power supplies and DC-DC converters.
5. Packaging: Available in compact packages like TO-220 or DPAK, facilitating easy integration into various designs.
6. Thermal Performance: Designed for efficient thermal management, ensuring reliability in high-performance applications.
This makes the STS10N3LH5 suitable for a variety of applications, including motor drives, power management, and signal switching.
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 30V, making it suitable for low-voltage power management.
2. Current Rating: It can handle continuous drain currents, usually around 10A, depending on the thermal conditions.
3. R_DS(on): Low on-resistance (R_DS(on)) value, which minimizes power loss and heat generation during operation.
4. Fast Switching: Capable of high-speed switching, ideal for applications in power supplies and DC-DC converters.
5. Packaging: Available in compact packages like TO-220 or DPAK, facilitating easy integration into various designs.
6. Thermal Performance: Designed for efficient thermal management, ensuring reliability in high-performance applications.
This makes the STS10N3LH5 suitable for a variety of applications, including motor drives, power management, and signal switching.
Package
The STS10N3LH5 is typically packaged in a TO-220 form factor. This package type is known for its good thermal performance and ease of handling, making it suitable for power applications.
Pinout
The STS10N3LH5 is a N-channel MOSFET with a pin count of 3. The pins and their functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the output terminal where the current flows out when the MOSFET is turned on.
3. Source (S): This is the input terminal where current comes into the MOSFET when it's in the "on" state.
This device is designed for applications requiring efficient switching performance, such as power management and motor control. The STS10N3LH5 is notable for its low on-resistance and fast switching speed, making it suitable for various electronic designs.
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the output terminal where the current flows out when the MOSFET is turned on.
3. Source (S): This is the input terminal where current comes into the MOSFET when it's in the "on" state.
This device is designed for applications requiring efficient switching performance, such as power management and motor control. The STS10N3LH5 is notable for its low on-resistance and fast switching speed, making it suitable for various electronic designs.
Manufacturer
The STS10N3LH5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of integrated circuits and discrete devices. The company operates in various sectors, including automotive, industrial, personal electronics, and communication equipment.
Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation in microelectronics and its commitment to sustainability. The company's product portfolio includes analog, digital, and mixed-signal ICs, as well as MEMS (Micro-Electro-Mechanical Systems) and sensors. STMicroelectronics is recognized for its strong emphasis on research and development, aiming to provide cutting-edge solutions for various applications, from consumer electronics to smart cities and the Internet of Things (IoT).
Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation in microelectronics and its commitment to sustainability. The company's product portfolio includes analog, digital, and mixed-signal ICs, as well as MEMS (Micro-Electro-Mechanical Systems) and sensors. STMicroelectronics is recognized for its strong emphasis on research and development, aiming to provide cutting-edge solutions for various applications, from consumer electronics to smart cities and the Internet of Things (IoT).
Application
The STS10N3LH5 is a N-channel MOSFET primarily used in power management applications. Its applications include DC-DC converters, power supplies, motor drivers, and LED drivers. This MOSFET is suitable for high-efficiency switching and is often utilized in consumer electronics, automotive systems, and renewable energy systems for efficient power conversion and control.
Equivalent
The STS10N3LH5 is a 30V N-channel MOSFET. Equivalent products include:
1. Infineon BSC010N3LSI
2. Vishay SiR10NP3
3. NXP PSMN3R3-30P
4. ON Semiconductor NTP10N30
Always verify specifications like Rds(on), Vgs, and package type for compatibility.
1. Infineon BSC010N3LSI
2. Vishay SiR10NP3
3. NXP PSMN3R3-30P
4. ON Semiconductor NTP10N30
Always verify specifications like Rds(on), Vgs, and package type for compatibility.
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