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STP4NK80Z
MOSFET N-CH 800V 3A TO220AB
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規格
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.5Ohm @ 1.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 22.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 575 pF @ 25 V |
| PowerDissipation(Max) | 80W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
概述
Description
The STP4NK80Z is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management, switching, and amplification. It features a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 4A. The device is known for its low on-resistance, which minimizes power loss during operation, making it suitable for energy-efficient designs.
Key specifications include a gate threshold voltage (V_GS(th)) of 2-4V, allowing for efficient drive capability. The STP4NK80Z typically includes a fast switching speed, making it ideal for applications in power supplies, industrial equipment, and consumer electronics.
The package is commonly available in TO-220 or similar configurations, facilitating easy heat dissipation. Overall, the STP4NK80Z is a reliable choice for designers looking for a robust MOSFET solution for high-voltage applications.
Key specifications include a gate threshold voltage (V_GS(th)) of 2-4V, allowing for efficient drive capability. The STP4NK80Z typically includes a fast switching speed, making it ideal for applications in power supplies, industrial equipment, and consumer electronics.
The package is commonly available in TO-220 or similar configurations, facilitating easy heat dissipation. Overall, the STP4NK80Z is a reliable choice for designers looking for a robust MOSFET solution for high-voltage applications.
Features
The STP4NK80Z is a power MOSFET designed for use in high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage of 800V, making it suitable for high-voltage circuits.
2. Current Handling: It supports continuous drain current up to 4A, which is beneficial for various power applications.
3. RDS(on): The on-state resistance is low, around 0.5Ω, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage ranges from 2V to 4V, allowing for efficient switching.
5. Package Type: Typically available in TO-220 and other packages, facilitating easy integration into circuits.
6. Fast Switching: It offers good switching speeds, making it suitable for applications such as switch-mode power supplies and inverters.
Overall, the STP4NK80Z is ideal for high-efficiency and high-voltage power management solutions.
1. Voltage Rating: It can handle a maximum drain-source voltage of 800V, making it suitable for high-voltage circuits.
2. Current Handling: It supports continuous drain current up to 4A, which is beneficial for various power applications.
3. RDS(on): The on-state resistance is low, around 0.5Ω, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage ranges from 2V to 4V, allowing for efficient switching.
5. Package Type: Typically available in TO-220 and other packages, facilitating easy integration into circuits.
6. Fast Switching: It offers good switching speeds, making it suitable for applications such as switch-mode power supplies and inverters.
Overall, the STP4NK80Z is ideal for high-efficiency and high-voltage power management solutions.
Package
The STP4NK80Z is typically available in a TO-220 package type. This package is designed for power MOSFET applications, providing efficient heat dissipation and electrical performance.
Pinout
The STP4NK80Z is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current flows out of the MOSFET. It connects to the load in the circuit.
3. Source (S): The source pin is where the current enters the MOSFET. It typically connects to ground in a low-side switching application.
The STP4NK80Z is designed to handle high voltage (up to 800V) and high current (up to 4A), making it suitable for various power management applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current flows out of the MOSFET. It connects to the load in the circuit.
3. Source (S): The source pin is where the current enters the MOSFET. It typically connects to ground in a low-side switching application.
The STP4NK80Z is designed to handle high voltage (up to 800V) and high current (up to 4A), making it suitable for various power management applications.
Manufacturer
The STP4NK80Z is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for producing a wide range of electronic components, including integrated circuits, microcontrollers, and power management devices. The company serves various industries, including automotive, industrial, consumer electronics, and communications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is a key player in the semiconductor market, focusing on innovation and sustainability in its product offerings.
Application
The STP4NK80Z is a N-channel MOSFET used primarily in power management applications. Its typical areas include switch-mode power supplies (SMPS), motor control, and inverters. It is also utilized in applications requiring high-voltage switching, such as lighting control and industrial automation systems, due to its high voltage rating (800V) and low on-resistance, enabling efficient power conversion and control.
Equivalent
The STP4NK80Z is a N-channel MOSFET rated for 800V, 4A, and features a low on-resistance. Equivalent products include:
1. IRF840
2. MTP4N80E
3. P6NK80Z
4. FQP8N80C
5. STP4NK80ZFP
Always check specific datasheets for detailed specifications and ensure compatibility with your application.
1. IRF840
2. MTP4N80E
3. P6NK80Z
4. FQP8N80C
5. STP4NK80ZFP
Always check specific datasheets for detailed specifications and ensure compatibility with your application.
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