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STP24N60M2
MOSFET N-CH 600V 18A TO220
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規格
| Series | MDmesh™ II Plus |
| Part Status | Active |
| Base Product Number | STP24 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 100 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
概述
Description
The STP24N60M2 is a high-voltage, N-channel MOSFET designed for various power applications, including switching regulators and motor control. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 24A, making it suitable for high-voltage environments. The device showcases low on-resistance (R_DS(on)) characteristics, which enhances its efficiency by reducing power losses during operation.
The STP24N60M2 is optimized for fast switching speeds, making it ideal for applications such as power converters, inverters, and other electronic circuits requiring reliable and efficient performance. Its TO-220 package allows for effective heat dissipation, facilitating its use in environments where thermal management is crucial.
Additionally, the device is designed with a gate threshold voltage (V_GS(th)) that ensures it operates efficiently within typical drive voltages. Overall, the STP24N60M2 is a versatile and robust component for engineers working on high-voltage applications.
The STP24N60M2 is optimized for fast switching speeds, making it ideal for applications such as power converters, inverters, and other electronic circuits requiring reliable and efficient performance. Its TO-220 package allows for effective heat dissipation, facilitating its use in environments where thermal management is crucial.
Additionally, the device is designed with a gate threshold voltage (V_GS(th)) that ensures it operates efficiently within typical drive voltages. Overall, the STP24N60M2 is a versatile and robust component for engineers working on high-voltage applications.
Features
The STP24N60M2 is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It can handle up to 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: With a maximum continuous drain current of 24A at 25°C, it is efficient for various power management tasks.
3. R_DS(on): Low on-resistance (typically around 0.18Ω), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The V_GS(th) is low, allowing for easy control with low-voltage drive circuits.
5. Fast Switching: Designed for fast switching speeds, it enhances performance in PWM applications.
6. Package Type: Available in TO-220 and DPAK packages, providing flexibility for thermal management and PCB design.
7. Robustness: Built with high thermal stability and a maximum junction temperature of 150°C, ensuring reliability in demanding environments.
These features make the STP24N60M2 suitable for applications such as power supplies, motor drives, and other high-efficiency switching applications.
1. Voltage Rating: It can handle up to 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: With a maximum continuous drain current of 24A at 25°C, it is efficient for various power management tasks.
3. R_DS(on): Low on-resistance (typically around 0.18Ω), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The V_GS(th) is low, allowing for easy control with low-voltage drive circuits.
5. Fast Switching: Designed for fast switching speeds, it enhances performance in PWM applications.
6. Package Type: Available in TO-220 and DPAK packages, providing flexibility for thermal management and PCB design.
7. Robustness: Built with high thermal stability and a maximum junction temperature of 150°C, ensuring reliability in demanding environments.
These features make the STP24N60M2 suitable for applications such as power supplies, motor drives, and other high-efficiency switching applications.
Package
The STP24N60M2 is typically available in a TO-220 package type. This package is designed for easy heat dissipation and is suitable for high-power applications.
Pinout
The STP24N60M2 is an N-channel MOSFET with a total of 3 pins. The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's on/off state by applying a voltage.
2. Drain (D) - The terminal through which the current flows out when the device is on.
3. Source (S) - The terminal through which the current enters the device.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 24A. It is commonly used in power electronics, switching applications, and in circuits where efficient operation is required.
1. Gate (G) - Controls the MOSFET's on/off state by applying a voltage.
2. Drain (D) - The terminal through which the current flows out when the device is on.
3. Source (S) - The terminal through which the current enters the device.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 24A. It is commonly used in power electronics, switching applications, and in circuits where efficient operation is required.
Manufacturer
The STP24N60M2 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics designs, develops, and supplies a wide range of semiconductor solutions, including integrated circuits and discrete devices. The company serves various markets, including automotive, industrial, consumer electronics, and communication. Known for its innovation and commitment to quality, STMicroelectronics focuses on providing efficient and sustainable technologies. The STP24N60M2 is a N-channel MOSFET designed for high-voltage applications, showcasing the company's expertise in power management solutions.
Application
The STP24N60M2 is a N-channel MOSFET commonly used in applications such as power supplies, DC-DC converters, motor drivers, and lighting control. Its high voltage and current handling capabilities make it suitable for industrial automation, automotive systems, and consumer electronics where efficient power management is essential.
Equivalent
The STP24N60M2 is a N-channel MOSFET with a 60V, 24A rating. Equivalent products include:
1. IRF240
2. IRF260
3. STP20NF60
4. FQP24N60
5. MTP24N60
Always verify specifications such as threshold voltage, Rds(on), and package type for compatibility.
1. IRF240
2. IRF260
3. STP20NF60
4. FQP24N60
5. MTP24N60
Always verify specifications such as threshold voltage, Rds(on), and package type for compatibility.
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