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STP20NM50
MOSFET N-CH 500V 20A TO220AB
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規格
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 250mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1480 pF @ 25 V |
| PowerDissipation(Max) | 192W (Tc) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
概述
Description
The STP20NM50 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage of 500V and a continuous drain current rating of 20A. This component is suitable for use in various applications, including switch-mode power supplies, motor drives, and other power conversion systems.
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. The STP20NM50 also provides fast switching speeds, making it ideal for high-frequency applications. Its robust construction allows for reliable performance in demanding environments.
The device typically comes in a TO-220 package, facilitating easy heat dissipation and mounting. It is important to consider thermal management in circuit design to ensure optimal performance and longevity of the MOSFET.
Overall, the STP20NM50 is a popular choice among engineers for its balance of high voltage, current capabilities, and efficiency, making it a versatile component in power electronics.
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. The STP20NM50 also provides fast switching speeds, making it ideal for high-frequency applications. Its robust construction allows for reliable performance in demanding environments.
The device typically comes in a TO-220 package, facilitating easy heat dissipation and mounting. It is important to consider thermal management in circuit design to ensure optimal performance and longevity of the MOSFET.
Overall, the STP20NM50 is a popular choice among engineers for its balance of high voltage, current capabilities, and efficiency, making it a versatile component in power electronics.
Features
The STP20NM50 is a N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 20A, allowing it to handle significant load currents.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of approximately 0.2Ω at a gate-source voltage (V_GS) of 10V, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V and 4V, making it easier to drive.
5. Package Type: It is typically available in a TO-220 package, facilitating heat dissipation in power applications.
6. Fast Switching: The device is optimized for fast switching speeds, suitable for applications like switch-mode power supplies and inverters.
These characteristics make the STP20NM50 a versatile choice for various power management tasks in industrial and consumer electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 20A, allowing it to handle significant load currents.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of approximately 0.2Ω at a gate-source voltage (V_GS) of 10V, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V and 4V, making it easier to drive.
5. Package Type: It is typically available in a TO-220 package, facilitating heat dissipation in power applications.
6. Fast Switching: The device is optimized for fast switching speeds, suitable for applications like switch-mode power supplies and inverters.
These characteristics make the STP20NM50 a versatile choice for various power management tasks in industrial and consumer electronics.
Package
The STP20NM50 is typically packaged in a TO-220 package type. This package allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
Pinout
The STP20NM50 is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's on/off state. A positive voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): The terminal through which the main current flows out of the MOSFET.
3. Source (S): The terminal through which the main current enters the MOSFET.
4. Body Diode (integrated): Provides a path for current in the reverse direction, useful in applications like switching power supplies.
The STP20NM50 is designed for high-voltage applications, with a maximum drain-source voltage of 500V and a continuous drain current rating of 20A. Its low on-resistance (R_DS(on)) facilitates efficient power management in circuits.
1. Gate (G): Controls the MOSFET's on/off state. A positive voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): The terminal through which the main current flows out of the MOSFET.
3. Source (S): The terminal through which the main current enters the MOSFET.
4. Body Diode (integrated): Provides a path for current in the reverse direction, useful in applications like switching power supplies.
The STP20NM50 is designed for high-voltage applications, with a maximum drain-source voltage of 500V and a continuous drain current rating of 20A. Its low on-resistance (R_DS(on)) facilitates efficient power management in circuits.
Manufacturer
The STP20NM50 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Switzerland. STMicroelectronics specializes in the design, development, manufacture, and marketing of a wide range of semiconductor products and technologies. The company serves various sectors, including automotive, industrial, consumer electronics, and communication. They are known for their innovative solutions in power management, microcontrollers, analog devices, and other electronic components. STMicroelectronics is recognized for its commitment to sustainability and environmental responsibility in the semiconductor industry.
Application
The STP20NM50 is a N-channel MOSFET primarily used in power electronics applications, such as switch-mode power supplies, motor drives, and industrial power conversion. Its features enable efficient switching and high voltage operation, making it suitable for applications in automotive, renewable energy systems, and consumer electronics. Additionally, it can be utilized in lighting control systems and various high-frequency applications due to its fast switching capabilities.
Equivalent
The STP20NM50 is a N-channel MOSFET with a 500V rating and 20A continuous current. Equivalent products include the IRF250, MTP20N50, and FQP20N50. Always verify specifications such as R_DS(on), gate threshold voltage, and package type before substituting.
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