圖片僅供參考
STGWT80H65DFB
IGBT 650V 120A 469W TO3P-3L
- 製造商
- 製造商。 部分 #STGWT80H65DFB
- 包 TO-3P
- 資料表 STGWT80H65DFB DataSheet
- 有現貨的6148
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 120 A |
| Current-CollectorPulsed(Icm) | 240 A |
| Vce(on)(Max)@VgeIc | 2V @ 15V, 80A |
| Power-Max | 469 W |
| SwitchingEnergy | 2.1mJ (on), 1.5mJ (off) |
| InputType | Standard |
| GateCharge | 414 nC |
| Td(on/off)@25°C | 84ns/280ns |
| TestCondition | 400V, 80A, 10Ohm, 15V |
| ReverseRecoveryTime(trr) | 85 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-3P-3, SC-65-3 |
概述
Description
The STGWT80H65DFB is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It operates at a maximum drain-source voltage of 650V and is capable of handling continuous drain currents of up to 80A, making it suitable for use in various high-voltage and high-current applications, including power supplies, motor drives, and industrial equipment.
Key features include low on-resistance (RDS(on)), which minimizes power losses during operation, and fast switching speeds that enhance efficiency in switching applications. The device is housed in a TO-220 package, facilitating good thermal performance and ease of heatsinking.
Typically, the STGWT80H65DFB is utilized in scenarios where efficiency and thermal management are critical, and it is favored in designs requiring robust performance under high-stress conditions. Its compatibility with standard driver circuits also makes it a versatile choice for engineers looking to optimize their power electronic solutions.
Key features include low on-resistance (RDS(on)), which minimizes power losses during operation, and fast switching speeds that enhance efficiency in switching applications. The device is housed in a TO-220 package, facilitating good thermal performance and ease of heatsinking.
Typically, the STGWT80H65DFB is utilized in scenarios where efficiency and thermal management are critical, and it is favored in designs requiring robust performance under high-stress conditions. Its compatibility with standard driver circuits also makes it a versatile choice for engineers looking to optimize their power electronic solutions.
Features
The STGWT80H65DFB is a high-performance MOSFET (metal-oxide-semiconductor field-effect transistor) featuring a 650V voltage rating and a maximum continuous drain current of 80A. It is designed for efficient switching applications in power converters, motor drives, and other high-voltage systems. Key features include:
1. Low Rds(on): This ensures reduced conduction losses and enhanced efficiency during operation.
2. Fast switching speed: Facilitates high-frequency operation, minimizing switching losses.
3. Thermal stability: The device is optimized for thermal performance, allowing better heat dissipation.
4. Avalanche rated: Provides additional reliability in transient conditions.
5. TO-220 package: Offers easy mounting and heat sinking options for better thermal management.
Overall, the STGWT80H65DFB is ideal for applications requiring high efficiency and reliability in power electronics.
1. Low Rds(on): This ensures reduced conduction losses and enhanced efficiency during operation.
2. Fast switching speed: Facilitates high-frequency operation, minimizing switching losses.
3. Thermal stability: The device is optimized for thermal performance, allowing better heat dissipation.
4. Avalanche rated: Provides additional reliability in transient conditions.
5. TO-220 package: Offers easy mounting and heat sinking options for better thermal management.
Overall, the STGWT80H65DFB is ideal for applications requiring high efficiency and reliability in power electronics.
Package
The STGWT80H65DFB is typically packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal management and robust electrical performance.
Pinout
The STGWT80H65DFB is a high-voltage N-channel MOSFET from STMicroelectronics, featuring a total of 8 pins. The pin configuration includes:
1. Gate (G) - Controls the operation of the MOSFET.
2. Drain (D) - The terminal through which current flows out of the MOSFET.
3. Source (S) - The terminal through which current flows into the MOSFET.
4-8. Additional Drain/Source Pins - These may be used for enhanced current handling or thermal performance.
The key functions of the pins are as follows:
- Gate (G): Used to switch the MOSFET on and off by applying a voltage.
- Drain (D): Connected to the load in a typical application.
- Source (S): Connected to the ground or negative supply in a circuit.
This MOSFET is designed for applications requiring high efficiency and fast switching, making it suitable for power converters, motor drives, and other high-frequency applications.
1. Gate (G) - Controls the operation of the MOSFET.
2. Drain (D) - The terminal through which current flows out of the MOSFET.
3. Source (S) - The terminal through which current flows into the MOSFET.
4-8. Additional Drain/Source Pins - These may be used for enhanced current handling or thermal performance.
The key functions of the pins are as follows:
- Gate (G): Used to switch the MOSFET on and off by applying a voltage.
- Drain (D): Connected to the load in a typical application.
- Source (S): Connected to the ground or negative supply in a circuit.
This MOSFET is designed for applications requiring high efficiency and fast switching, making it suitable for power converters, motor drives, and other high-frequency applications.
Manufacturer
The STGWT80H65DFB is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics designs and manufactures a wide range of semiconductor products, including integrated circuits, microcontrollers, and power management devices. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovation and commitment to research and development, playing a significant role in the advancement of technology in multiple sectors.
Application
The STGWT80H65DFB is a N-channel MOSFET primarily used in power electronics applications. Its key application areas include industrial motor drives, power supplies, renewable energy systems (like solar inverters), electric vehicles, and high-frequency switching applications. It is designed for high-efficiency switching and thermal performance, making it suitable for various power management solutions.
Equivalent
The STGWT80H65DFB chip is a 650V, 80A N-channel MOSFET. Equivalent products include the Infineon IPW80R065CFD, ON Semiconductor NTP80N65, and Vishay SIHG80N65. Always verify specifications and suitability for your specific application before replacement.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25L3233FZBI-08Q
Macronix
-
MX25V1635FZNI
Macronix
-
MX25V1635FZNQ03
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V16066M1I02
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25U25645GXDI00
Macronix
-
MX25L12835FZ2I-10..
Macronix