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STGWA40H65DFB2
TRENCH GATE FIELD-STOP 650 V 40
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- 製造商。 部分 #STGWA40H65DFB2
- 包 TO-247 long leads
- 資料表 STGWA40H65DFB2 DataSheet
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規格
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 72 A |
| Current-CollectorPulsed(Icm) | 160 A |
| Vce(on)(Max)@VgeIc | 2V @ 15V, 40A |
| Power-Max | 230 W |
| SwitchingEnergy | 765µJ (on), 410µJ (off) |
| InputType | Standard |
| GateCharge | 153 nC |
| Td(on/off)@25°C | 18ns/72ns |
| TestCondition | 400V, 40A, 4.7Ohm, 15V |
| ReverseRecoveryTime(trr) | 75 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
概述
Description
The STGWA40H65DFB2 is a high-performance N-channel MOSFET designed for power applications. It features a voltage rating of 650V and a current rating of 40A, making it suitable for use in various high-voltage switching applications. This MOSFET is characterized by its low on-resistance (R_DS(on)), which enhances efficiency and reduces power loss during operation. It is particularly useful in power supply circuits, motor drives, and renewable energy systems.
The device is built using advanced technology to ensure fast switching speeds, making it ideal for applications requiring rapid turn-on and turn-off cycles. Additionally, the STGWA40H65DFB2 is encapsulated in a TO-247 package, which facilitates effective heat dissipation, ensuring reliable performance under load. Its robust design is suitable for automotive and industrial environments, offering a balance of performance, efficiency, and thermal management. Overall, the STGWA40H65DFB2 is an excellent choice for designers seeking high-efficiency solutions in demanding power applications.
The device is built using advanced technology to ensure fast switching speeds, making it ideal for applications requiring rapid turn-on and turn-off cycles. Additionally, the STGWA40H65DFB2 is encapsulated in a TO-247 package, which facilitates effective heat dissipation, ensuring reliable performance under load. Its robust design is suitable for automotive and industrial environments, offering a balance of performance, efficiency, and thermal management. Overall, the STGWA40H65DFB2 is an excellent choice for designers seeking high-efficiency solutions in demanding power applications.
Features
The STGWA40H65DFB2 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 40A, allowing it to manage significant power loads.
3. Low On-Resistance: It offers a low R_DS(on) of approximately 0.55 ohms, which reduces power losses and enhances efficiency.
4. Fast Switching: The MOSFET is designed for rapid switching, enabling better performance in high-frequency applications.
5. Thermal Performance: It features a high junction temperature rating and good thermal dissipation characteristics.
6. TO-220 Package: The device is housed in a TO-220 package, which supports easy mounting and heatsinking.
These features make the STGWA40H65DFB2 suitable for use in various applications, including power supplies, motor drives, and energy conversion systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 40A, allowing it to manage significant power loads.
3. Low On-Resistance: It offers a low R_DS(on) of approximately 0.55 ohms, which reduces power losses and enhances efficiency.
4. Fast Switching: The MOSFET is designed for rapid switching, enabling better performance in high-frequency applications.
5. Thermal Performance: It features a high junction temperature rating and good thermal dissipation characteristics.
6. TO-220 Package: The device is housed in a TO-220 package, which supports easy mounting and heatsinking.
These features make the STGWA40H65DFB2 suitable for use in various applications, including power supplies, motor drives, and energy conversion systems.
Package
The STGWA40H65DFB2 is typically packaged in a TO-247 form factor. This package type is designed for high-power applications, offering good thermal performance and ease of mounting on heat sinks.
Pinout
The STGWA40H65DFB2 is a power MOSFET with a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the main current flows out.
3. Source (S) - The terminal through which the current enters the MOSFET.
Typically, in a standard package layout, the pins are arranged to facilitate easy connection in circuit designs. This device is designed for high-voltage applications and features low on-resistance, making it suitable for various switching and amplification applications in power management circuits.
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the main current flows out.
3. Source (S) - The terminal through which the current enters the MOSFET.
Typically, in a standard package layout, the pins are arranged to facilitate easy connection in circuit designs. This device is designed for high-voltage applications and features low on-resistance, making it suitable for various switching and amplification applications in power management circuits.
Manufacturer
The manufacturer of the STGWA40H65DFB2 is STMicroelectronics. STMicroelectronics is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including microcontrollers, sensors, and power management devices. The company is known for its focus on innovation and sustainability, serving various industries such as automotive, industrial, consumer electronics, and communication. Established through the merger of SGS Microelettronica and Thomson Semiconducteurs, STMicroelectronics is headquartered in Geneva, Switzerland, and is recognized as one of the top semiconductor companies in the world.
Application
The STGWA40H65DFB2 is a high-voltage N-channel MOSFET used in various applications, including power supplies, motor drives, and industrial automation. Its features make it suitable for energy-efficient systems in renewable energy setups, electric vehicles, and DC-DC converters. Additionally, it is employed in switch-mode power supplies (SMPS) and other high-frequency applications for improved thermal performance and reliability.
Equivalent
The STGWA40H65DFB2 is a 650V, 40A IGBT with a soft recovery diode. Equivalent products include:
1. Infineon IGBT: IKW40N65H3
2. ON Semiconductor: MGD20N65D1
3. NXP (formerly Freescale): FGA40N65FDT
4. Fairchild: FGA40N65UFD
Always check datasheets for specific electrical characteristics to ensure compatibility.
1. Infineon IGBT: IKW40N65H3
2. ON Semiconductor: MGD20N65D1
3. NXP (formerly Freescale): FGA40N65FDT
4. Fairchild: FGA40N65UFD
Always check datasheets for specific electrical characteristics to ensure compatibility.
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