STGWA40H120DF2

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STGWA40H120DF2

TRENCH GATE IGBT TO247 PKG

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規格

Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 160 A
Vce(on)(Max)@VgeIc 2.6V @ 15V, 40A
Power-Max 468 W
SwitchingEnergy 1mJ (on), 1.32mJ (off)
InputType Standard
GateCharge 158 nC
Td(on/off)@25°C 18ns/152ns
TestCondition 600V, 40A, 10Ohm, 15V
ReverseRecoveryTime(trr) 488 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

概述

Description

The STGWA40H120DF2 is a high-voltage, high-speed N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. It is part of STMicroelectronics' product line, offering features such as low on-resistance, fast switching times, and high efficiency, making it suitable for industrial, automotive, and renewable energy systems.
This MOSFET is optimized for use in applications like power supplies, motor drives, and DC-DC converters. It typically has a drain-source voltage rating of 1200V and a continuous drain current rating that enables operation in demanding environments.
Key specifications include low gate charge, which helps in minimizing switching losses, and a robust thermal performance that ensures reliability under harsh conditions. The STGWA40H120DF2's design enables efficient power management and can handle high-frequency operations, making it a popular choice among engineers for designing efficient power electronics systems.

Features

The STGWA40H120DF2 is a fast recovery diode designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum repetitive reverse voltage (V_RRM) of 1200 V, making it suitable for high-voltage applications.
2. Current Rating: The continuous forward current (I_F) is rated at 40 A, allowing it to handle significant current loads.
3. Low Forward Voltage Drop: It offers a low forward voltage drop, improving efficiency and reducing power loss during operation.
4. Fast Recovery Time: The diode features a fast reverse recovery time, making it ideal for switching applications.
5. Thermal Management: It has a high maximum operating junction temperature (T_j) of 150°C, ensuring reliable performance in demanding environments.
6. Package Type: The device is packaged in a TO-247 package, providing good thermal dissipation and ease of mounting.
Overall, the STGWA40H120DF2 is well-suited for power conversion, motor control, and automotive applications.

Package

The STGWA40H120DF2 is packaged in a TO-220 form factor, which is a common packaging type for power semiconductor devices that allows for efficient heat dissipation and easy mounting on heatsinks.

Manufacturer

The manufacturer of the STGWA40H120DF2 is STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing, manufacturing, and marketing a wide range of semiconductor products and solutions, including analog, digital, and mixed-signal devices. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications. Established in 1987, it is headquartered in Geneva, Switzerland, and is known for its commitment to innovation, sustainability, and high-performance technologies.

Application

The STGWA40H120DF2 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in power electronics applications. Its key areas include industrial motor drives, renewable energy systems (like solar inverters), uninterruptible power supplies (UPS), and electric vehicles. It enhances efficiency in switching applications, making it suitable for high-performance power conversion and control tasks.

Equivalent

The STGWA40H120DF2 is an IGBT (Insulated Gate Bipolar Transistor) module. Equivalent products include:
1. Infineon FF300R12ME4
2. Mitsubishi CM300DY-12H
3. NXP NXH08055M
4. SEMIKRON SKM300GB123D
Always verify specifications and suitability for your application before replacement.

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