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STGWA30M65DF2

Name: STGWA30M65DF2
Rating: 4.7 (12 reviews)

IGBT 650V 30A TO247-3

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製造商。部分 #STGWA30M65DF2
包 TO-247-3
資料表 STGWA30M65DF2 DataSheet
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規格

Supplier	STMicroelectronics
Package	Tube
ProductStatus	Active
IGBTType	Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max)	650 V
Current-Collector(Ic)(Max)	60 A
Current-CollectorPulsed(Icm)	120 A
Vce(on)(Max)@VgeIc	2V @ 15V, 30A
Power-Max	258 W
SwitchingEnergy	300µJ (on), 960µJ (off)
InputType	Standard
GateCharge	80 nC
Td(on/off)@25°C	31.6ns/115ns
TestCondition	400V, 30A, 10Ohm, 15V
ReverseRecoveryTime(trr)	140 ns
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
Package/Case	TO-247-3

概述

Description

STGWA30M65DF2 is a STMicroelectronics power module from the STGWA family. It is a high‑voltage, high‑current semiconductor module intended for inverter/motor‑drive and other power‑electronics apps. The device typically provides high‑speed IGBTs with antiparallel diodes rated around 650 V (M65) and about 30 A (30), in a compact module suitable for drives, solar inverters, UPS, and similar systems. Key points: it combines switching devices and diodes in a single package to simplify heat sinking and board layout, supports fast switching, and offers robust protection and reliability features per the datasheet. For exact topology (how many IGBTs/diodes, pinout, thermal specs, safe operating area, and mounting requirements) and to verify di/dt/di/diode characteristics, consult the official STGWA30M65DF2 datasheet and ST’s product page.

Features

STGWA30M65DF2 Features (concise)
- 650 V blocking voltage
- 30 A continuous current
- IGBT with trench-gate technology for low conduction losses
- Integrated fast free‑wheeling diode (anti-parallel)
- DF2 package for compact surface-mount design with good heat sinking
- Fast switching capability with low switching losses
- High dV/dt immunity and rugged short‑circuit withstand
- Suitable for automotive and industrial power‑conversion applications (motor drives, power supplies, PFC, etc.)
Note: For exact electrical figures (Vce(sat), switching speeds, safe operating area, isolation, temp range), please consult the ST datasheet.

Package

D2PAK (TO-263) surface-mount package.

Pinout

Pin count: 4 electrical connections (3 leads: Gate, Emitter, Collector; plus a tab tied to the Collector).
Function: Discrete IGBT switch (N‑channel) rated around 650 V / 30 A, used for high‑power switching; the tab functions as the Collector connection (with an intrinsic anti‑parallel diode in the device).

Manufacturer

Manufacturer: STMicroelectronics (ST).
What kind of company: A French-Italian multinational electronics and semiconductor company, headquartered in Geneva, Switzerland. It is one of the world’s largest semiconductor manufacturers, designing and producing a broad range of products (microcontrollers, sensors, analog devices, and power semiconductors like IGBTs and MOSFETs) for automotive, industrial, and consumer markets.

Application

STGWA30M65DF2 is a 650 V, ~30 A IGBT module. Typical applications include:
- AC motor drives and servo drives
- Solar/renewable energy inverters
- Uninterruptible power supplies (UPS) and storage inverters
- Switch-mode power supplies (DC-DC, AC-DC)
- Welding and induction heating equipment
- Industrial power-electronics for drives and auxiliary in EV/robotics.

Equivalent

STGWA30M65DF2 is a 650 V, 30 A IGBT module (with integrated diodes). There is no published exact one‑to‑one equivalent. Closest substitutes are 650 V, ~30 A IGBT modules from other vendors (Infineon, ON Semiconductor, Vishay, etc.) with similar packaging/diode topology. For an exact cross-reference, use ST’s Cross Reference tool or distributor cross-lists; provide package, current rating, diode arrangement, and pinout to identify suitable substitutes.