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STGW45HF60WD
IGBT 600V 70A 250W TO247
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- 製造商。 部分 #STGW45HF60WD
- 包 TO-247
- 資料表 STGW45HF60WD DataSheet
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規格
| Package | Tube |
| ProductStatus | Obsolete |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 70 A |
| Current-CollectorPulsed(Icm) | 150 A |
| Vce(on)(Max)@VgeIc | 2.5V @ 15V, 30A |
| Power-Max | 250 W |
| SwitchingEnergy | 300µJ (on), 330µJ (off) |
| InputType | Standard |
| GateCharge | 160 nC |
| Td(on/off)@25°C | 30ns/145ns |
| TestCondition | 400V, 30A, 6.8Ohm, 15V |
| ReverseRecoveryTime(trr) | 55 ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
概述
Description
The STGW45HF60WD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for power applications. It belongs to the STMicroelectronics’ family of devices that combine the advantages of both bipolar transistors and MOSFETs, offering high efficiency and fast switching capabilities. This particular model is rated for a maximum collector-emitter voltage (VCE) of 600V and a continuous collector current (IC) of up to 45A, making it suitable for various applications such as inverters, motor drives, and power supply circuits.
Key features include low conduction and switching losses, high-speed performance, and thermal stability, which enhance its reliability in demanding environments. The STGW45HF60WD also supports high-frequency operation, making it ideal for applications requiring compact designs and efficient power conversion. Its robust construction ensures durability, contributing to its longevity in industrial applications. Overall, this IGBT is a versatile choice for engineers looking to optimize performance in high-power electronic systems.
Key features include low conduction and switching losses, high-speed performance, and thermal stability, which enhance its reliability in demanding environments. The STGW45HF60WD also supports high-frequency operation, making it ideal for applications requiring compact designs and efficient power conversion. Its robust construction ensures durability, contributing to its longevity in industrial applications. Overall, this IGBT is a versatile choice for engineers looking to optimize performance in high-power electronic systems.
Features
The STGW45HF60WD is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for various applications, including industrial drives and renewable energy systems. Key features include:
1. Voltage Rating: 600V, suitable for medium-voltage applications.
2. Current Rating: 45A, providing robust performance for demanding loads.
3. Fast Switching: Enhanced switching speed reduces power losses and improves efficiency.
4. Thermal Management: Integrated temperature sensor for effective thermal monitoring and management.
5. Modular Design: Compact footprint for easy integration into power systems.
6. Low Switching Losses: Optimized for minimal conduction losses, enhancing overall system efficiency.
7. Robust Gate Drive: Compatible with standard gate driver circuits, promoting ease of use.
8. High Reliability: Designed for long operational life in harsh environments.
These features make the STGW45HF60WD suitable for high-efficiency power conversion applications, contributing to reduced overall system costs and improved performance.
1. Voltage Rating: 600V, suitable for medium-voltage applications.
2. Current Rating: 45A, providing robust performance for demanding loads.
3. Fast Switching: Enhanced switching speed reduces power losses and improves efficiency.
4. Thermal Management: Integrated temperature sensor for effective thermal monitoring and management.
5. Modular Design: Compact footprint for easy integration into power systems.
6. Low Switching Losses: Optimized for minimal conduction losses, enhancing overall system efficiency.
7. Robust Gate Drive: Compatible with standard gate driver circuits, promoting ease of use.
8. High Reliability: Designed for long operational life in harsh environments.
These features make the STGW45HF60WD suitable for high-efficiency power conversion applications, contributing to reduced overall system costs and improved performance.
Package
The STGW45HF60WD is packaged in a DPAK (also known as TO-252) package type. This package is commonly used for surface-mount applications and provides a compact design suitable for power devices.
Pinout
The STGW45HF60WD is an N-channel power MOSFET, specifically designed for high-voltage applications. It features a TO-247 package with a pin count of three.
Pin Functions:
1. Gate (G): The gate terminal controls the MOSFET's operation, allowing it to switch on and off by applying a voltage relative to the source.
2. Drain (D): The drain terminal is where the load current enters the MOSFET when it is in the on state, allowing for power flow to the connected load.
3. Source (S): The source terminal is the reference point for the gate voltage and allows the current to exit the MOSFET.
This device can handle a maximum drain-source voltage (Vds) of 600V and has a continuous drain current (Id) capability of up to 45A, making it suitable for applications in power converters, motor drives, and other high-voltage circuits.
Pin Functions:
1. Gate (G): The gate terminal controls the MOSFET's operation, allowing it to switch on and off by applying a voltage relative to the source.
2. Drain (D): The drain terminal is where the load current enters the MOSFET when it is in the on state, allowing for power flow to the connected load.
3. Source (S): The source terminal is the reference point for the gate voltage and allows the current to exit the MOSFET.
This device can handle a maximum drain-source voltage (Vds) of 600V and has a continuous drain current (Id) capability of up to 45A, making it suitable for applications in power converters, motor drives, and other high-voltage circuits.
Manufacturer
The STGW45HF60WD is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its wide range of products, including microcontrollers, sensors, power management devices, and analog ICs. The company serves various sectors, including automotive, industrial, consumer electronics, and communication. Headquartered in Geneva, Switzerland, STMicroelectronics operates worldwide, focusing on innovation and sustainability in semiconductor technology.
Application
The STGW45HF60WD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in industrial applications such as motor drives, power inverters, and renewable energy systems like solar and wind power. Its features make it suitable for applications requiring high efficiency and thermal performance, including uninterruptible power supplies (UPS) and induction heating systems.
Equivalent
The STGW45HF60WD is a 600V, 45A IGBT. Equivalent products include the Infineon FGH60N60SFD, Mitsubishi CM600HA-24H, and the ON Semiconductor MJB45H60. Be sure to check the specific datasheets for parameters like switching speed and thermal characteristics to ensure compatibility for your application.
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