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STGW40H120F2

Name: STGW40H120F2
Rating: 4.7 (12 reviews)

IGBT 1200V 40A HS TO-247

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製造商。部分 #STGW40H120F2
包 TO-247-3
資料表 STGW40H120F2 DataSheet
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規格

Supplier	STMicroelectronics
Package	Tube
ProductStatus	Active
IGBTType	Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max)	1200 V
Current-Collector(Ic)(Max)	80 A
Current-CollectorPulsed(Icm)	160 A
Vce(on)(Max)@VgeIc	2.6V @ 15V, 40A
Power-Max	468 W
SwitchingEnergy	1mJ (on), 1.32mJ (off)
InputType	Standard
GateCharge	158 nC
Td(on/off)@25°C	18ns/152ns
TestCondition	600V, 40A, 10Ohm, 15V
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
Package/Case	TO-247-3

概述

Description

STGW40H120F2 is STMicroelectronics’ dual IGBT power module. It houses two high-voltage, high-current IGBTs with anti-parallel diodes in one package, rated about 1.2 kV and 40 A per device. The F2 suffix indicates the two-channel version used in compact inverters and motor drives. Applications include motor drives, inverters, UPS, and power supplies. It is typically mounted on an isolated baseplate and cooled by forced air or liquid cooling, designed for common heatsink configurations. Key features include rugged safe-operating-area, fast switching, and easy paralleling of devices within the module. For exact electricals (Vces, Ic, Vge, switching times), thermal data, and packaging, consult the official datasheet. This module is useful when space and wiring need to be minimized without sacrificing performance or reliability.

Features

STGW40H120F2 is a dual IGBT module with two IGBTs and two fast-recovery diodes. Key features:
- 1,200 V blocking voltage
- 40 A continuous current per switch
- Two IGBTs + two anti-parallel fast-recovery diodes in one half-bridge package
- Optimized for motor drives, inverters, solar, and UPS applications
- High dV/dt and low conduction losses for improved efficiency
- Fully isolated baseplate for easy heatsinking
- Wide operating temperature range (typical −40°C to +125°C)
- Pb-free/halogen-free packaging; suitable for standard gate-drive schemes
Note: For exact electrical specs (Vcesat, switching times, short-circuit withstand, etc.), refer to the datasheet.

Package

IPAK – an isolated power-module package (IGBT module).

Pinout

Pin count: 8 terminals (two power terminals plus six signal pins).
Function: STGW40H120F2 is a dual high-power IGBT module (two N-channel IGBTs with anti-parallel diodes), rated around 1200 V and 40 A, intended for use as a half-bridge/inverter switching leg in motor drive and power conversion applications.

Manufacturer

- Manufacturer: STMicroelectronics (ST)
- Company type: A multinational semiconductor and electronics company (global designer and manufacturer of ICs, discrete devices, power modules, MEMS/sensors, etc.), headquartered in Geneva, Switzerland.

Application

STGW40H120F2 is a 1200 V, 40 A IGBT module (two IGBTs/diodes in one package). Typical applications:
- Solar and other renewable-energy inverters
- AC motor drives (industrial and consumer)
- Uninterruptible power supplies (UPS) and DC–AC converters
- Inverter-based welding equipment
- Servo/stepper motor drive systems
- DC–DC converters and battery charging systems

Equivalent

STGW40H120F2 is a 1200 V, 40 A dual IGBT module. Common equivalents from other vendors include Infineon EconoDUAL 2 1200 V/40 A modules, Wolfspeed (Cree) 1200 V dual IGBT modules, and ON Semiconductor (Renesas) 1200 V dual IGBT modules with similar packaging. For exact cross-references, check ST’s cross-reference tool or distributor catalogs, as part numbers vary by package revision.