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STGD18N40LZT4
IGBT 420V 25A 125W DPAK
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- 製造商。 部分 #STGD18N40LZT4
- 包 TO-252-3
- 資料表 STGD18N40LZT4 DataSheet
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, PowerMESH™ |
| ProductStatus | Active |
| Voltage-CollectorEmitterBreakdown(Max) | 420 V |
| Current-Collector(Ic)(Max) | 25 A |
| Current-CollectorPulsed(Icm) | 40 A |
| Vce(on)(Max)@VgeIc | 1.7V @ 4.5V, 10A |
| Power-Max | 125 W |
| InputType | Logic |
| GateCharge | 29 nC |
| Td(on/off)@25°C | 650ns/13.5µs |
| TestCondition | 300V, 10A, 5V |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
概述
Description
The STGD18N40LZT4 is a high-voltage N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a maximum drain-source voltage (Vds) of 400V and a continuous drain current (Id) of 18A, making it suitable for various high-power switching applications, including industrial power supplies, motor drives, and inverters.
This MOSFET is characterized by its low on-resistance (Rds(on)), which enhances efficiency by minimizing power loss during operation. The STGD18N40LZT4 also offers fast switching capabilities, making it well-suited for applications requiring high-frequency operation.
Additionally, it comes in a TO-220 package, facilitating easy heat dissipation and mounting. The device is often used in conjunction with gate drivers to optimize performance and control in circuits. Safety features, such as avalanche rating, further enhance its reliability.
Overall, the STGD18N40LZT4 is a robust choice for engineers looking to implement efficient and reliable power management solutions in various electronic systems.
This MOSFET is characterized by its low on-resistance (Rds(on)), which enhances efficiency by minimizing power loss during operation. The STGD18N40LZT4 also offers fast switching capabilities, making it well-suited for applications requiring high-frequency operation.
Additionally, it comes in a TO-220 package, facilitating easy heat dissipation and mounting. The device is often used in conjunction with gate drivers to optimize performance and control in circuits. Safety features, such as avalanche rating, further enhance its reliability.
Overall, the STGD18N40LZT4 is a robust choice for engineers looking to implement efficient and reliable power management solutions in various electronic systems.
Features
The STGD18N40LZT4 is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: The device has a maximum drain-source voltage (VDS) of 400V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (ID) of 18A, with pulsed current capability up to 60A.
3. RDS(on): The on-resistance is low, typically around 0.18 ohms, ensuring efficient performance and reduced power losses.
4. Gate Threshold Voltage (VGS(th)): The threshold voltage ranges from 2 to 4V, allowing for easy drive with standard gate voltages.
5. Package Type: It comes in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching: Designed for high-speed switching applications, it offers low gate charge (Qg), aiding in quicker response times.
7. Applications: Commonly used in power supplies, motor drives, and other high-efficiency power management systems.
These attributes make the STGD18N40LZT4 a reliable choice for designers seeking high performance in their power electronics.
1. Voltage Rating: The device has a maximum drain-source voltage (VDS) of 400V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (ID) of 18A, with pulsed current capability up to 60A.
3. RDS(on): The on-resistance is low, typically around 0.18 ohms, ensuring efficient performance and reduced power losses.
4. Gate Threshold Voltage (VGS(th)): The threshold voltage ranges from 2 to 4V, allowing for easy drive with standard gate voltages.
5. Package Type: It comes in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching: Designed for high-speed switching applications, it offers low gate charge (Qg), aiding in quicker response times.
7. Applications: Commonly used in power supplies, motor drives, and other high-efficiency power management systems.
These attributes make the STGD18N40LZT4 a reliable choice for designers seeking high performance in their power electronics.
Package
The STGD18N40LZT4 is packaged in a TO-247 format. This package type is designed for high-power applications, offering good thermal performance and ease of handling.
Pinout
The STGD18N40LZT4 is a high-voltage N-channel MOSFET from STMicroelectronics. It features a total of 3 pins.
Here are the pin functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a positive voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is the terminal through which the current enters the MOSFET when it is turned on.
3. Source (S): The source pin is where the current exits the MOSFET when it is conducting.
This device is designed for applications requiring high voltage and current handling, such as power supplies and motor drives, with a maximum drain-source voltage (V_DS) of 400V and a continuous current rating (I_D) of 18A.
Here are the pin functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a positive voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is the terminal through which the current enters the MOSFET when it is turned on.
3. Source (S): The source pin is where the current exits the MOSFET when it is conducting.
This device is designed for applications requiring high voltage and current handling, such as power supplies and motor drives, with a maximum drain-source voltage (V_DS) of 400V and a continuous current rating (I_D) of 18A.
Manufacturer
The STGD18N40LZT4 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including power management devices, analog ICs, microcontrollers, and more. The company serves various markets, including automotive, industrial, personal electronics, and communications. It is known for its innovation and contributions to smart technology, energy efficiency, and IoT applications.
Application
The STGD18N40LZT4 is a high-voltage N-channel MOSFET primarily used in power supplies, motor control, and industrial applications. Its features make it suitable for switch-mode power supplies (SMPS), DC-DC converters, and inverters. Additionally, it can be employed in automotive applications for power management and in renewable energy systems such as solar inverters.
Equivalent
The STGD18N40LZT4 is an N-channel MOSFET with a voltage rating of 400V and a current rating of 18A. Equivalent products include:
1. IXGH40N60C3 - 600V, 40A
2. IRF840 - 500V, 8A
3. FQP30N60 - 600V, 30A
4. STP40NF06 - 60V, 40A (lower voltage)
Always check specific parameters like RDS(on) and thermal characteristics for compatibility in your application.
1. IXGH40N60C3 - 600V, 40A
2. IRF840 - 500V, 8A
3. FQP30N60 - 600V, 30A
4. STP40NF06 - 60V, 40A (lower voltage)
Always check specific parameters like RDS(on) and thermal characteristics for compatibility in your application.
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