圖片僅供參考

STFU18N65M2

Name: STFU18N65M2
Rating: 4.7 (12 reviews)

MOSFET N-CH 650V 12A TO220FP

製造商
製造商。部分 #STFU18N65M2
包
資料表
有現貨的931

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Supplier	STMicroelectronics
Package	Tube
Series	MDmesh™ M2
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	650 V
Current-ContinuousDrain(Id)@25°C	12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	330mOhm @ 6A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	20 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	770 pF @ 100 V
PowerDissipation(Max)	25W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220FP

概述

Description

STFU18N65M2 is a high‑voltage N‑channel power MOSFET from STMicroelectronics. It is designed for power-switching applications that require blocking up to 650 V and is commonly used in offline switch-mode power supplies, high‑voltage DC–DC converters, motor drives, and inverters. The device typically belongs to ST’s trench/low‑Rds(on) MOSFET family and includes a body diode and rugged avalanche energy capability for inductive loads.
Key points:
- Type: N‑channel enhancement‑mode MOSFET
- Voltage rating: up to 650 V
- Current and on‑resistance: depend on package and variant; the name suggests around 18 A class, but exact values are in the datasheet
- Gate drive: typically requires about 10 V for full conduction (not a logic‑level device); max Vgs ±20 V
- Packages: available in common power formats (e.g., D²PAK/IPAК), specifics depend on variant
For precise Id, Rds(on), switching times, thermal data, and packaging, consult the ST datasheet for STFU18N65M2.

Features

STFU18N65M2 is an N-channel enhancement-mode power MOSFET. Key features:
- VDS = 650 V; ID = ~18 A nominal
- M2 trench technology for high voltage handling and reliable switching
- Fairly low gate drive requirement with fast switching capability
- Avalanche rugged for inductive-load applications; good SOA and short-circuit tolerance
- Low gate charge and capacitance for efficient drive; supports fast dv/dt
- Integrated body diode with suitable reverse recovery performance
- Available in common power packages for through-hole and surface-mount designs
- Suitable for switch-mode power supplies, PFC, motor drives, inverters, solar inverters
Note: for exact RDS(on), gate charge (Qg), and package options, consult the ST datasheet.

Package

TO-220AB (through-hole) N-channel MOSFET; a surface-mount D2PAK version may also be available.

Pinout

- Pin count: 3 leads (Gate, Drain, Source). In many packages the drain is also tied to the metal tab.
- Function: N-channel enhancement-mode power MOSFET (650 V, ~18 A) used as a high-voltage switching device.

Manufacturer

- Manufacturer: STMicroelectronics (ST)
- What kind of company: A multinational semiconductor company that designs and manufactures integrated circuits, discrete semiconductors, sensors, and power devices (headquartered in Geneva, Switzerland).

Application

STFU18N65M2 is a 650-V N-channel power MOSFET. Common applications:
- Offline switch-mode power supplies (PFC/front-end)
- Solar/wind inverters and battery charging
- Uninterruptible power supplies (UPS) and telecom power systems
- Motor control and variable-frequency drives for small to mid-size motors
- High-voltage DC-DC converters and power stages in industrial equipment