STF7N80K5

The STF7N80K5 is an N-channel MOSFET designed for high-voltage applications. It features a 700V drain-source voltage rating and a continuous drain current of up to 7A, making it suitable for power supplies, inverters, and other switching applications. The device is known for its low on-resistance (Rds(on)), which improves efficiency by reducing power losses during operation.
Key specifications include a maximum gate-source voltage of ±20V, a total gate charge of 80 nC, and a thermal resistance junction-to-case of 62°C/W. Its robust construction and high breakdown voltage make it ideal for industrial and consumer electronics.
The STF7N80K5 is often used in applications requiring reliable switching performance and thermal stability, contributing to overall system efficiency. It is packaged in a TO-220 form factor, facilitating easy heat dissipation and installation in various designs.

The STF7N80K5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 7A, allowing it to manage significant current loads.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of approximately 0.8 ohms at V_GS = 10V, which reduces power losses during operation.
4. Thermal Performance: With a maximum junction temperature of 150°C, it supports robust thermal management.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, providing flexibility in gate drive requirements.
6. Package: It is typically available in the TO-220 package, facilitating easy mounting and efficient heat dissipation.
These features make the STF7N80K5 ideal for various applications, including power supplies, motor drives, and industrial equipment.

The STF7N80K5 is typically packaged in a TO-220 form factor. This package type is known for its effective thermal management and is commonly used for power MOSFETs in applications requiring efficient heat dissipation.

The STF7N80K5 is an N-channel MOSFET from STMicroelectronics, designed for high-voltage applications. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin controls the MOSFET's on/off state by applying a voltage.
2. Drain (D) - This pin connects to the load and allows the current to flow from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin connects to the ground or the lower potential side of the circuit.
With a maximum voltage rating of 800V and a continuous drain current of 7A, the STF7N80K5 is suitable for power management and switching applications in various electronic circuits.

The STF7N80K5 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics designs and produces a wide range of semiconductor products, including integrated circuits, microcontrollers, and sensors. The company serves various industries such as automotive, industrial, consumer electronics, and communications. Established in 1987 through the merger of Italian and French companies, STMicroelectronics is known for its innovation and commitment to sustainability in technology. It is one of the leading suppliers in the semiconductor market, focusing on developing products that enable smarter and more efficient electronic systems.

The STF7N80K5 is a high-voltage N-channel MOSFET commonly used in various applications such as switch mode power supplies (SMPS), DC-DC converters, motor drives, and inverters. Its high voltage rating (800V) and low on-resistance make it suitable for high-efficiency power electronics, including industrial equipment, renewable energy systems, and consumer electronics.

The STF7N80K5 is a power MOSFET with a 800V, 7A rating. Equivalent products include the STP7N80K5, IRF7N80, and FQP7N80. These alternatives may have slightly different specifications, so it's essential to check the datasheets for exact parameters such as RDS(on) and gate threshold voltage to ensure compatibility.